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2014 44th European Solid State Device Research Conference (ESSDERC)最新文献

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Variability of UTBB MOSFET analog figures of merit in wide frequency range 宽频率范围内UTBB MOSFET模拟数字的可变性
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948800
S. Makovejev, B. K. Esfeh, J. Raskin, V. Kilchytska, D. Flandre, V. Barral, N. Planes, M. Haond
{"title":"Variability of UTBB MOSFET analog figures of merit in wide frequency range","authors":"S. Makovejev, B. K. Esfeh, J. Raskin, V. Kilchytska, D. Flandre, V. Barral, N. Planes, M. Haond","doi":"10.1109/ESSDERC.2014.6948800","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948800","url":null,"abstract":"Inter-die variability of analog figures of merit of ultra-thin body and buried oxide (UTBB) FDSOI MOSFETs was studied in a wide frequency range. We demonstrate that variability in the entire frequency range is small and does not exceed 5%, which is considerably less than in previously published results on SOI FinFETs. An effect of frequency on the analog figures of merit variability is discussed and preliminary explanation is proposed.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127744632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability 纳米尺度finfet SRAM电池稳定性的过程和统计变异性之间相互作用的精确模拟
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948832
Xingsheng Wang, B. Cheng, A. Brown, C. Millar, A. Asenov
{"title":"Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability","authors":"Xingsheng Wang, B. Cheng, A. Brown, C. Millar, A. Asenov","doi":"10.1109/ESSDERC.2014.6948832","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948832","url":null,"abstract":"In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-Optimization (DTCO). The proposed statistical simulation and compact modelling methodology is demonstrated via a comprehensive evaluation of the impact of FinFET variability on SRAM cell stability.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129550226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Printed OTFT complementary circuits and matrix for Smart Sensing Surfaces applications 用于智能传感表面应用的印刷OTFT互补电路和矩阵
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948795
I. Chartier, S. Jacob, M. Charbonneau, A. Aliane, A. Plihon, R. Coppard, R. Gwoziecki, J. Verilhac, C. Serbutoviez, O. Dhez, E. Cantatore, F. D. Santos
{"title":"Printed OTFT complementary circuits and matrix for Smart Sensing Surfaces applications","authors":"I. Chartier, S. Jacob, M. Charbonneau, A. Aliane, A. Plihon, R. Coppard, R. Gwoziecki, J. Verilhac, C. Serbutoviez, O. Dhez, E. Cantatore, F. D. Santos","doi":"10.1109/ESSDERC.2014.6948795","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948795","url":null,"abstract":"Large area sensing surface have strong interest for many applicative sectors: transport, health, building, industrial, user interface. Printed electronics offers breakthrough technical solutions to fulfill these applications. Indeed printed sensors, addressed by printed oTFT matrix and circuits, heterogeneously connected to classical Silicon microprocessor for the signal processing, offers unreached solutions when multipoint, large area and flexibility are required. Recent developments in printed organic \"CMOS\" circuits, OTFT backplanes and sensors obtained on PICTIC large area Sheet-To-Sheet printing platform will be presented with vision on future potential applications.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129775954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A 9.8 μm sample and hold time to amplitude converter CMOS SPAD pixel 9.8 μm样品和保持时间到幅度转换器CMOS SPAD像素
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948817
L. Parmesan, N. Dutton, N. Calder, A. Holmes, L. Grant, R. Henderson
{"title":"A 9.8 μm sample and hold time to amplitude converter CMOS SPAD pixel","authors":"L. Parmesan, N. Dutton, N. Calder, A. Holmes, L. Grant, R. Henderson","doi":"10.1109/ESSDERC.2014.6948817","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948817","url":null,"abstract":"A 9.8μm pitch SPAD-based pixel is presented with a novel and scalable Sample and Hold (S/H) Time to Amplitude Converter (TAC) pixel architecture offering the potential to create high spatial resolution Time Correlated Single Photon Counting (TCSPC) image sensors in the future. This pixel pitch is an order of magnitude smaller than previous TCSPC pixels. The NMOS-only TAC performance is measured in a single point TCSPC optical experimental setup. 93ps LSB time resolution is obtained over 80ns dynamic range. Dynamic range limitations are discussed and improvements are suggested.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128004568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
Flexible thermoelectric generator based on transfer printed Si microwires 基于转移印刷硅微丝的柔性热电发电机
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948764
Saleem Khan, R. Dahiya, L. Lorenzelli
{"title":"Flexible thermoelectric generator based on transfer printed Si microwires","authors":"Saleem Khan, R. Dahiya, L. Lorenzelli","doi":"10.1109/ESSDERC.2014.6948764","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948764","url":null,"abstract":"This paper presents development of a flexible thermoelectric energy harvester by using transfer printed doped Silicon (Si) microwires. The thermoelectric generator (TEG) module, consisting of an array of 34 alternately doped p-type and n-type Si microwires, is developed on a Si on insulator (SOI) wafer using standard photolithography and etching techniques. The Si wires in the TEG module are 5mm long, 50μm wide, and the spacing between two adjacent wires is 50μm. The TEG modules are transferred from SOI wafer to Poly (ethylene terephthalate) (PET) substrate by using transfer printing method, with Polydimethylsiloxane (PDMS) as transfer substrate. More than 90% of wires are transferred in the first transfer step (i.e. from wafer to PDMS) and 100% are transferred in the second step (i.e. PDMS to PET) has been achieved in this process. A maximum of 9.3mV open circuit voltage was recorded from the flexible micro TEG prototype with a temperature difference of 54oC at two ends of the wires.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121544870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
A semiconductor memory development and manufacturing perspective 半导体存储器的开发和制造前景
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948745
G. Atwood, S. DeBoer, K. Prall, Linda Somerville
{"title":"A semiconductor memory development and manufacturing perspective","authors":"G. Atwood, S. DeBoer, K. Prall, Linda Somerville","doi":"10.1109/ESSDERC.2014.6948745","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948745","url":null,"abstract":"Semiconductor memories are growing in importance as they are now fundamental in every electronic system and offer new manufacturing and development challenges and opportunities. From a manufacturing point of view, the industry has undergone consolidation and today very few players are able to supply the high wafer volumes required by the global market. From a technology development point of view, new applications requiring lower power, higher memory density and improved performance creates opportunities for alternative memory technologies. Moreover, the shift to 3-dimensional integration and to new system architectures result in both manufacturing and technology challenges.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122580946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Parameters extraction on HfOX based RRAM 基于HfOX的RRAM参数提取
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948807
Peng Huang, Bing Chen, Haitong Li, Zhe Chen, B. Gao, Xiaoyan Liu, Jinfeng Kang
{"title":"Parameters extraction on HfOX based RRAM","authors":"Peng Huang, Bing Chen, Haitong Li, Zhe Chen, B. Gao, Xiaoyan Liu, Jinfeng Kang","doi":"10.1109/ESSDERC.2014.6948807","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948807","url":null,"abstract":"In this work, a novel methodology including the extraction strategy and characterization procedure is developed to extract the physical parameters which dominate the switching characteristics of HfOX based RRAM devices. With the extracted parameters, the retention behaviors of HfOX based RRAM devices are simulated by the atom-level simulation tool and compared with the measurement. The agreement between the simulation and measurement verifies the validity of the developed methodology.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123362353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
3-D electrothermal device/circuit simulation of DC-DC converter module in multi-die IC 多模集成电路中DC-DC变换器模块的三维电热器件/电路仿真
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948775
A. Chvála, D. Donoval, L. Nagy, J. Marek, P. Pribytny, M. Molnar
{"title":"3-D electrothermal device/circuit simulation of DC-DC converter module in multi-die IC","authors":"A. Chvála, D. Donoval, L. Nagy, J. Marek, P. Pribytny, M. Molnar","doi":"10.1109/ESSDERC.2014.6948775","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948775","url":null,"abstract":"Presented work introduces automated interaction of SDevice and HSPICE for fast 3-D electrothermal simulation. The proposed methodology maintains a very high accuracy of the modelled parameters in a wide range of dynamic temperature fluctuations, which brings the thermal simulations much closer to the real state. The designed electrothermal simulation is developed for Synopsys TCAD Sentaurus environment. The main goal is decreasing the simulation time for complex 3-D devices. A DC-DC converter module in a multi-die integrated circuit is used as an example to perform validation of the designed electrothermal simulation. The features and limitations of the method are analyzed and presented.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"8 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130704924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 6.7 MHz nanoelectromechanical ring oscillator using curved cantilever switches coated with amorphous carbon 一种6.7 MHz奈米机电环形振荡器，采用涂覆非晶碳的弯曲悬臂开关
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948759
C. Ayala, D. Grogg, A. Bazigos, M. Fernandez-Bolaños, U. Dürig, M. Despont, C. Hagleitner
{"title":"A 6.7 MHz nanoelectromechanical ring oscillator using curved cantilever switches coated with amorphous carbon","authors":"C. Ayala, D. Grogg, A. Bazigos, M. Fernandez-Bolaños, U. Dürig, M. Despont, C. Hagleitner","doi":"10.1109/ESSDERC.2014.6948759","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948759","url":null,"abstract":"Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using cell-level digital logic elements based on curved NEM switches. The NEM switch has a size of 5×3 μm2, an air gap of 60 nm and is coated with amorphous carbon (a-C) for reliable operation. The ring oscillator operates at a frequency of 6.7 MHz and confirms the simulated inverter propagation delay of 25 ns. The successful fabrication and measurement of this demonstrator is a key milestone on the way towards an optimized, scaled technology with sub-nanosecond switching times, lower operating voltages and VLSI implementation.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124488520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS LRS中HfO2 RRAM器件的RTN和循环变异性分析
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948806
F. Puglisi, P. Pavan, L. Larcher, A. Padovani
{"title":"Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS","authors":"F. Puglisi, P. Pavan, L. Larcher, A. Padovani","doi":"10.1109/ESSDERC.2014.6948806","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948806","url":null,"abstract":"In this work, we present a thorough statistical characterization of cycling variability and Random Telegraph Noise (RTN) in HfO2-based Resistive Random Access Memory (RRAM) cells in Low Resistive State (LRS). Devices are tested under a variety of operational conditions. A Factorial Hidden Markov Model (FHMM) analysis is exploited to extrapolate the properties of the traps causing multi-level RTN in LRS. The trapping and de-trapping of charge carriers into/out of defects located in the proximity of the conductive filament results in a shielding effect on a portion of the conductive filament, leading to the observed RTN current fluctuations. The variations of the current observed at subsequent set/reset cycles are instead attributed to the stochastic variations in the filament due to oxidation/reduction processes during reset and set operations, respectively. The statistical characterization of RTN and cycling variability does not show correlation between these phenomena.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121274525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
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