Peng Huang, Bing Chen, Haitong Li, Zhe Chen, B. Gao, Xiaoyan Liu, Jinfeng Kang
{"title":"基于HfOX的RRAM参数提取","authors":"Peng Huang, Bing Chen, Haitong Li, Zhe Chen, B. Gao, Xiaoyan Liu, Jinfeng Kang","doi":"10.1109/ESSDERC.2014.6948807","DOIUrl":null,"url":null,"abstract":"In this work, a novel methodology including the extraction strategy and characterization procedure is developed to extract the physical parameters which dominate the switching characteristics of HfOX based RRAM devices. With the extracted parameters, the retention behaviors of HfOX based RRAM devices are simulated by the atom-level simulation tool and compared with the measurement. The agreement between the simulation and measurement verifies the validity of the developed methodology.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Parameters extraction on HfOX based RRAM\",\"authors\":\"Peng Huang, Bing Chen, Haitong Li, Zhe Chen, B. Gao, Xiaoyan Liu, Jinfeng Kang\",\"doi\":\"10.1109/ESSDERC.2014.6948807\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a novel methodology including the extraction strategy and characterization procedure is developed to extract the physical parameters which dominate the switching characteristics of HfOX based RRAM devices. With the extracted parameters, the retention behaviors of HfOX based RRAM devices are simulated by the atom-level simulation tool and compared with the measurement. The agreement between the simulation and measurement verifies the validity of the developed methodology.\",\"PeriodicalId\":262652,\"journal\":{\"name\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2014.6948807\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 44th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2014.6948807","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this work, a novel methodology including the extraction strategy and characterization procedure is developed to extract the physical parameters which dominate the switching characteristics of HfOX based RRAM devices. With the extracted parameters, the retention behaviors of HfOX based RRAM devices are simulated by the atom-level simulation tool and compared with the measurement. The agreement between the simulation and measurement verifies the validity of the developed methodology.
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