宽频率范围内UTBB MOSFET模拟数字的可变性

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948800

S. Makovejev, B. K. Esfeh, J. Raskin, V. Kilchytska, D. Flandre, V. Barral, N. Planes, M. Haond

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引用次数: 3

摘要

研究了超薄体埋氧化物(UTBB) FDSOI mosfet模拟参量在宽频率范围内的芯片间变异性。我们证明了整个频率范围内的可变性很小，不超过5%，这比以前发表的SOI finfet的结果要小得多。讨论了频率对性能变异性模拟数字的影响，并提出了初步的解释。

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Variability of UTBB MOSFET analog figures of merit in wide frequency range

Inter-die variability of analog figures of merit of ultra-thin body and buried oxide (UTBB) FDSOI MOSFETs was studied in a wide frequency range. We demonstrate that variability in the entire frequency range is small and does not exceed 5%, which is considerably less than in previously published results on SOI FinFETs. An effect of frequency on the analog figures of merit variability is discussed and preliminary explanation is proposed.

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2014 44th European Solid State Device Research Conference (ESSDERC)

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