Flexible thermoelectric generator based on transfer printed Si microwires

Saleem Khan, R. Dahiya, L. Lorenzelli
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引用次数: 23

Abstract

This paper presents development of a flexible thermoelectric energy harvester by using transfer printed doped Silicon (Si) microwires. The thermoelectric generator (TEG) module, consisting of an array of 34 alternately doped p-type and n-type Si microwires, is developed on a Si on insulator (SOI) wafer using standard photolithography and etching techniques. The Si wires in the TEG module are 5mm long, 50μm wide, and the spacing between two adjacent wires is 50μm. The TEG modules are transferred from SOI wafer to Poly (ethylene terephthalate) (PET) substrate by using transfer printing method, with Polydimethylsiloxane (PDMS) as transfer substrate. More than 90% of wires are transferred in the first transfer step (i.e. from wafer to PDMS) and 100% are transferred in the second step (i.e. PDMS to PET) has been achieved in this process. A maximum of 9.3mV open circuit voltage was recorded from the flexible micro TEG prototype with a temperature difference of 54oC at two ends of the wires.
基于转移印刷硅微丝的柔性热电发电机
本文介绍了一种利用转移印刷掺杂硅微线的柔性热电能量采集器的研制。热电发生器(TEG)模块由34条交替掺杂的p型和n型硅微线组成,采用标准光刻和蚀刻技术在硅绝缘体(SOI)晶圆上开发。TEG模块的Si线长5mm,宽50μm,线间距50μm。以聚二甲基硅氧烷(PDMS)为转移基材,采用转移印刷方法将TEG组件从SOI硅片转移到聚对苯二甲酸乙酯(PET)基材上。该工艺实现了90%以上的线在第一步(即从晶圆到PDMS)转移,100%以上的线在第二步(即PDMS到PET)转移。柔性微型TEG原型在导线两端温差54oC的情况下,最大开路电压为9.3mV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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