纳米尺度finfet SRAM电池稳定性的过程和统计变异性之间相互作用的精确模拟

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948832

Xingsheng Wang, B. Cheng, A. Brown, C. Millar, A. Asenov

{"title":"纳米尺度finfet SRAM电池稳定性的过程和统计变异性之间相互作用的精确模拟","authors":"Xingsheng Wang, B. Cheng, A. Brown, C. Millar, A. Asenov","doi":"10.1109/ESSDERC.2014.6948832","DOIUrl":null,"url":null,"abstract":"In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-Optimization (DTCO). The proposed statistical simulation and compact modelling methodology is demonstrated via a comprehensive evaluation of the impact of FinFET variability on SRAM cell stability.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability\",\"authors\":\"Xingsheng Wang, B. Cheng, A. Brown, C. Millar, A. Asenov\",\"doi\":\"10.1109/ESSDERC.2014.6948832\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-Optimization (DTCO). The proposed statistical simulation and compact modelling methodology is demonstrated via a comprehensive evaluation of the impact of FinFET variability on SRAM cell stability.\",\"PeriodicalId\":262652,\"journal\":{\"name\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2014.6948832\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 44th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2014.6948832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

在本文中，我们说明了如何通过使用先进的原子式TCAD工具来精确建模和模拟finfet中远程过程变化和短程统计变化之间的相互作用，以实现设计-技术协同优化(DTCO)。通过对FinFET可变性对SRAM电池稳定性的影响的综合评估，证明了所提出的统计模拟和紧凑建模方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability

In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-Optimization (DTCO). The proposed statistical simulation and compact modelling methodology is demonstrated via a comprehensive evaluation of the impact of FinFET variability on SRAM cell stability.

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2014 44th European Solid State Device Research Conference (ESSDERC)

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