S. Makovejev, B. K. Esfeh, J. Raskin, V. Kilchytska, D. Flandre, V. Barral, N. Planes, M. Haond
{"title":"Variability of UTBB MOSFET analog figures of merit in wide frequency range","authors":"S. Makovejev, B. K. Esfeh, J. Raskin, V. Kilchytska, D. Flandre, V. Barral, N. Planes, M. Haond","doi":"10.1109/ESSDERC.2014.6948800","DOIUrl":null,"url":null,"abstract":"Inter-die variability of analog figures of merit of ultra-thin body and buried oxide (UTBB) FDSOI MOSFETs was studied in a wide frequency range. We demonstrate that variability in the entire frequency range is small and does not exceed 5%, which is considerably less than in previously published results on SOI FinFETs. An effect of frequency on the analog figures of merit variability is discussed and preliminary explanation is proposed.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 44th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2014.6948800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Inter-die variability of analog figures of merit of ultra-thin body and buried oxide (UTBB) FDSOI MOSFETs was studied in a wide frequency range. We demonstrate that variability in the entire frequency range is small and does not exceed 5%, which is considerably less than in previously published results on SOI FinFETs. An effect of frequency on the analog figures of merit variability is discussed and preliminary explanation is proposed.