12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.最新文献_第2页

Spike anneal for NiSi formation NiSi形成的穗退火

12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. Pub Date : 2004-09-28 DOI: 10.1109/RTP.2004.1441947

S. Ramamurthy, N. Tam, B. Ramachandran, T. Dixit, Eun-Ha Kim, H. Forstner

引用次数: 3

Leveraging a low pressure thermal module to meet the challenges of advanced device manufacturing 利用低压热模块来应对先进设备制造的挑战

12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. Pub Date : 2004-09-28 DOI: 10.1109/RTP.2004.1441938

B. Peuse, M. Pfarr, P. Timans, Y. Hu

引用次数: 0

Infusion processing solutions for USJ and localized strained-Si using gas cluster ion beams 使用气体簇离子束对USJ和局部应变si的灌注处理溶液

12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. Pub Date : 2004-09-28 DOI: 10.1109/RTP.2004.1441709

J. Hautala, J. Borland

{"title":"Infusion processing solutions for USJ and localized strained-Si using gas cluster ion beams","authors":"J. Hautala, J. Borland","doi":"10.1109/RTP.2004.1441709","DOIUrl":"https://doi.org/10.1109/RTP.2004.1441709","url":null,"abstract":"Infusion processing using gas cluster ion beam (GCIB) technology provides several new capabilities in the areas of ultra shallow junction formation and localized or blanket SiGe formation resulting in strained-Si. This room temperature process requires only solid phase epitaxy (SPE) anneals (<700degC) for diffusionless activation and high quality SiGe or Ge formation. Initial tests indicate all standard annealing methods are compatible with the process. For the formation of ultra shallow junctions, there are four enabling aspects to this new technology: 1) no channeling is observed, so a pre-amorphizing implant (PAI) is not required for Xj<10 nm; 2) a box-like profile of the dopant can be engineered; 3) no end of range (EOR) damage is observed when Ge is included in the cluster. This creates a self-amorphizing infusion doping step that potentially advances the use of the various diffusionless activation methods since there is no issue with junction leakage; 4) by increasing the amount of Ge incorporated in the cluster and as a result into the Si surface, the boron solid solubility (Bss) can be increased, thereby lowering the Rs and Rext for the source drain extension structures. When higher infusion doses of GeH4 and/or SiH4 containing clusters are used, dose controlled deposition (DCD) occurs. The DCD infusion process appears to be insensitive to surface impurities such as native oxide due to the highly localized transient thermal spike (TTS). This produces a 100% amorphous layer with no post deposition interfacial layer enabling complete single crystal epitaxial regrowth of the Ge or SiGe at temperatures down to 550degC. Since this is a room temperature process, the localized infusion and deposition are compatible with photoresist patterning","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115129060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Design of a hot wall-based low temperature annealing system and its process applications 基于热壁的低温退火系统设计及其工艺应用

12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. Pub Date : 2004-09-28 DOI: 10.1109/RTP.2004.1441941

W. Yoo, T. Fukada, T. Murakami, K. Kang, J. Foggiato

引用次数: 0

Effect of a noble annealing system on nickel silicide formation 惰性退火系统对硅化镍形成的影响

12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. Pub Date : 2004-09-28 DOI: 10.1109/RTP.2004.1441946

Sug-Woo Jung, Hyun-Su Kim, E. Jung, S. Cheong, J. Yun, K. Roh, J. Ku, G. Choi, Sung-tae Kim, U. Chung, J. Moon, B. Ryu

引用次数: 1

Alignment mark shift due to thermal non-uniformity: what is moving? 由于热不均匀性引起的对准标记移位:什么在移动?

12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. Pub Date : 2004-09-28 DOI: 10.1109/RTP.2004.1441955

B. Lojek, M. Whiteman, K. Starzinski

引用次数: 1

NiSi contact formation - process integration advantages with partial Ni conversion NiSi接触形成-具有部分Ni转换的工艺集成优势

12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. Pub Date : 2004-09-28 DOI: 10.1109/RTP.2004.1441942

K. Funk, X. Pagès, V. Kuznetsov, E. Granneman

引用次数: 13

Post BF/sub 2//sup +/ implant annealing using single wafer rapid thermal furnace 后BF/sub /sup +/植入退火采用单晶片快速热炉

12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. Pub Date : 2004-09-28 DOI: 10.1109/RTP.2004.1441949

T. Fukada, W. Yoo

{"title":"Post BF/sub 2//sup +/ implant annealing using single wafer rapid thermal furnace","authors":"T. Fukada, W. Yoo","doi":"10.1109/RTP.2004.1441949","DOIUrl":"https://doi.org/10.1109/RTP.2004.1441949","url":null,"abstract":"49BF2 + implanted wafers were annealed in the temperature range of 900degC and 1100degC using a single wafer rapid thermal furnace for 30 sec to 1800 sec under N2 ambient at atmospheric pressure. Sheet resistance and its uniformity were measured. Boron and fluorine depth profiles at different annealing temperatures and times were analyzed using secondary ion mass spectroscopy (SIMS). The minimum sheet resistance of 67.46 Omega/sq. with a uniformity of 0.57% (1sigma) was achieved at 1000degC for 90 s annealing time. Good uniformity with good productivity was attained with the sheet resistance decreasing as annealing temperature and time increased. Boron moved toward the silicon surface during annealing as was observed through SIMS analysis and fluorine desorption was enhanced with increasing annealing temperature and time. The electrically activated dopant concentration was calculated by evaluation of the sheet resistance and the junction depth estimated from SIMS depth profile. The concentration was on the order of 1020 atoms/cm3 regardless of annealing temperature and was closer to the solid solubility of boron in silicon as reported in the past. It is recommended that the appropriate dosage and implant energy should be selected in order to prevent inactive dopant existence and unnecessary diffusion due to an unnecessarily high gradient of dopant concentration","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122212400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wafer temperature non-uniformity due to volumetric absorption of radiation 由于辐射的体积吸收而引起的晶圆温度不均匀

12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. Pub Date : 2004-09-28 DOI: 10.1109/RTP.2004.1441966

B. Lojek

引用次数: 6

Modeling and experimental results for an RTP light-pipe radiation thermometer calibration testbed RTP光管辐射温度计标定试验台的建模与实验结果

12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. Pub Date : 2004-09-28 DOI: 10.1109/RTP.2004.1441961

K. Ball, J. Howell

引用次数: 8