{"title":"由于辐射的体积吸收而引起的晶圆温度不均匀","authors":"B. Lojek","doi":"10.1109/RTP.2004.1441966","DOIUrl":null,"url":null,"abstract":"Until recently, the semiconductor production wafer processed in a rapid thermal processing system was considered to be an opaque material where all of the incident irradiation is absorbed by the surface and volume absorption has no significance. Such an approach cannot explain several experimentally observed effects such as the different emissivity of doped and un-doped regions, difference in temperatures between die and its boundary, etc. This paper describes a method of solution of heat transfer in semitransparent medium. An example illustrates the impact of semitransparency on the wafer temperature distribution","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Wafer temperature non-uniformity due to volumetric absorption of radiation\",\"authors\":\"B. Lojek\",\"doi\":\"10.1109/RTP.2004.1441966\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Until recently, the semiconductor production wafer processed in a rapid thermal processing system was considered to be an opaque material where all of the incident irradiation is absorbed by the surface and volume absorption has no significance. Such an approach cannot explain several experimentally observed effects such as the different emissivity of doped and un-doped regions, difference in temperatures between die and its boundary, etc. This paper describes a method of solution of heat transfer in semitransparent medium. An example illustrates the impact of semitransparency on the wafer temperature distribution\",\"PeriodicalId\":261126,\"journal\":{\"name\":\"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RTP.2004.1441966\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTP.2004.1441966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wafer temperature non-uniformity due to volumetric absorption of radiation
Until recently, the semiconductor production wafer processed in a rapid thermal processing system was considered to be an opaque material where all of the incident irradiation is absorbed by the surface and volume absorption has no significance. Such an approach cannot explain several experimentally observed effects such as the different emissivity of doped and un-doped regions, difference in temperatures between die and its boundary, etc. This paper describes a method of solution of heat transfer in semitransparent medium. An example illustrates the impact of semitransparency on the wafer temperature distribution