由于辐射的体积吸收而引起的晶圆温度不均匀

B. Lojek
{"title":"由于辐射的体积吸收而引起的晶圆温度不均匀","authors":"B. Lojek","doi":"10.1109/RTP.2004.1441966","DOIUrl":null,"url":null,"abstract":"Until recently, the semiconductor production wafer processed in a rapid thermal processing system was considered to be an opaque material where all of the incident irradiation is absorbed by the surface and volume absorption has no significance. Such an approach cannot explain several experimentally observed effects such as the different emissivity of doped and un-doped regions, difference in temperatures between die and its boundary, etc. This paper describes a method of solution of heat transfer in semitransparent medium. An example illustrates the impact of semitransparency on the wafer temperature distribution","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Wafer temperature non-uniformity due to volumetric absorption of radiation\",\"authors\":\"B. Lojek\",\"doi\":\"10.1109/RTP.2004.1441966\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Until recently, the semiconductor production wafer processed in a rapid thermal processing system was considered to be an opaque material where all of the incident irradiation is absorbed by the surface and volume absorption has no significance. Such an approach cannot explain several experimentally observed effects such as the different emissivity of doped and un-doped regions, difference in temperatures between die and its boundary, etc. This paper describes a method of solution of heat transfer in semitransparent medium. An example illustrates the impact of semitransparency on the wafer temperature distribution\",\"PeriodicalId\":261126,\"journal\":{\"name\":\"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RTP.2004.1441966\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTP.2004.1441966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

直到最近,在快速热处理系统中加工的半导体生产晶圆被认为是一种不透明材料,所有入射辐射都被表面吸收,体积吸收没有意义。这种方法不能解释一些实验观察到的效应,如掺杂和未掺杂区域的不同发射率,芯片及其边界之间的温度差异等。本文介绍了一种求解半透明介质传热问题的方法。举例说明了半透明对晶圆温度分布的影响
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer temperature non-uniformity due to volumetric absorption of radiation
Until recently, the semiconductor production wafer processed in a rapid thermal processing system was considered to be an opaque material where all of the incident irradiation is absorbed by the surface and volume absorption has no significance. Such an approach cannot explain several experimentally observed effects such as the different emissivity of doped and un-doped regions, difference in temperatures between die and its boundary, etc. This paper describes a method of solution of heat transfer in semitransparent medium. An example illustrates the impact of semitransparency on the wafer temperature distribution
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信