12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.最新文献

{"title":"Advanced doping and millisecond annealing for ultra-shallow junctions for 65 nm and beyond","authors":"McCoy, Edwin, Arevalo, Daniel, Downey","doi":"10.1109/RTP.2004.1441943","DOIUrl":"https://doi.org/10.1109/RTP.2004.1441943","url":null,"abstract":"To meet the requirements of smaller devices while still maintaining high performance, it is necessary to form very shallow source/drain extensions with very high activation. Although significant progress has been made in meeting these requirements as outlined in the 2003 ITRS, continued progress in meeting the needs for the 65 nm technology generation and beyond remain a challenge. It will no longer be sufficient to consider the doping (ion implantation) and activation (annealing) steps independently. Both must be optimized together as a process sequence or module. This paper will survey the requirements for USJ doping and activation for the 65 nm node and beyond. Some recent results of the annealing of shallow P2LAD-doped silicon wafers using Vortek's fRTP millisecond flash lamp annealing will be presented and some discussion of the extendibility and applicability of these techniques will be presented","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131490596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of volumetric radiation effects in lightpipe thermometry","authors":"D. Frankman, B. Webb, M. Jones","doi":"10.1109/RTP.2004.1441965","DOIUrl":"https://doi.org/10.1109/RTP.2004.1441965","url":null,"abstract":"A major obstacle to the widespread implementation of rapid thermal processing (RTP) is the challenge of wafer temperature measurement. Frequently, lightpipe radiation thermometers (LPRT) are used to measure wafer temperatures in RTP reactors. While the lightpipe distorts the wafer temperature profile less than temperature measurement techniques which require physical contact, the presence of the lightpipe influences the wafer temperature profile. This paper presents the results of a theoretical study exploring that influence. Radiation transfer in the LPRT is modeled with varying levels of rigor, ranging from a volumetrically non-participating treatment to a full (gray) solution of the radiative transfer equation. The results of the study clearly indicate the need to model the lightpipe as a volumetrically participating, semitransparent medium and further, underline the need for knowledge of accurate radiative properties of the lightpipe material","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115685266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Formation of ultrashallow junctions in 500 eV boron implanted silicon using nonmelt laser annealing","authors":"S. Earles, M. Law, K. Jones, J. Frazer, S. Talwar, D. Downey, E. Arevalo","doi":"10.1109/RTP.2004.1441951","DOIUrl":"https://doi.org/10.1109/RTP.2004.1441951","url":null,"abstract":"Nonmelt laser annealing (NLA) is used to form heavily-doped, ultra-shallow regions in boron implanted crystalline silicon. Results are compared to samples receiving a conventional 1050degC spike anneal. A high-dose non-amorphizing boron implant of 1015 ions/cm2 at 500 eV is used. The implant is laser annealed with between one and 1000 20 ns long pulses or a 1050degC spike anneal. NLA alone produces junction depths from 21 to 25 nm with sheet resistances around 800 W/sq, while spike annealing results in 40 nm junctions at ~ 2400 W/sq. Hall effect measurements produce mobilities around 30 cm2/V-s. Plan-view TEM shows damage from the implant is completely removed after 100 pulses. Thus, nonmelt laser annealing alone can be used to produce shallower junctions with lower resistivity than conventional RTA offering junction characteristics suitable for the 2007 65 nm ITRS technology node","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126970553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radiative properties of silicon-based thin films for partially coherent radiation","authors":"K. Fu, P. Hsu, Zhoumin Zhang","doi":"10.1109/RTP.2004.1441963","DOIUrl":"https://doi.org/10.1109/RTP.2004.1441963","url":null,"abstract":"Radiative properties of thin films are derived based on the concept of optical coherence theory. Instead of the previous approach of deriving the property formulae based on the degree of coherence, a direct integration to obtain the averaged properties over a finite spectral resolution is developed. The resulting analytical formulae are in excellent agreement with the prior work. The formulae are compact in form and much easier to use to invert optical properties with measured reflectance or transmittance as compared with the prior work. The incoherent and coherent limits can be easily reduced from the general formulae and the resulting equations corresponding to those of geometric and wave optics, respectively. Rigorous criteria of incoherent and coherent regimes are developed. These criteria are very useful in determining under what situations that simpler wave optics and geometric optics formulae can apply","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130878100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Status of NIST near infrared emittance measurement system","authors":"L. Hanssen, M. Rink, S. Mekhontsev","doi":"10.1109/RTP.2004.1441957","DOIUrl":"https://doi.org/10.1109/RTP.2004.1441957","url":null,"abstract":"A new capability for the measurement of temperature-dependent emittance of specular samples in the near infrared spectral region has been developed in NIST's Infrared Spectrophotometry Laboratory. The effort is directed to support needs for emittance data and standards for a broad range of applications including rapid thermal processing (RTP). Our approach employs the indirect method of reflectance and transmittance measurements to obtain emittance and a vacuum goniometer system to control the sample environment and measurement geometry. The system has been developed for the acquisition of emittance data of specular samples and the development of standards. The heart of the system, including the sample, is contained in a vacuum chamber that enables characterization of materials otherwise susceptible to oxidation. Three diode lasers (900 nm, 950 nm, and 1560 nm) and a halogen lamp are used as radiation sources. Internal Si and InGaAs detectors and an external monochromator are used in both reflectance and transmittance modes. The spectral range of the monochromator/detectors is 600 nm to 2300 nm. A cold reference and hot sample are mounted on a horizontal stage, which in turn is mounted on a rotation stage. Reference standard samples (at room temperature) used are un-doped silicon and gold mirrors. The reflectance detector stage is also mounted on a rotation stage to enable measurement of angle dependent emittance. Optical windows and fiber optics are used for light input and output. The sample heater employs a platinum-ceramic element and allows temperatures between 100degC and > 800degC. It is shielded from the black walls of the chamber by a water-cooled shroud. The system has initially been used to characterize the spectral emittance (via reflectance) of a variety of semiconductor wafer samples including bare silicon and silicon substrates coated with SiO2, Si3 N4, and polysilicon films. The spectral range for these measurements is 600 nm to 1100 nm, where Si is opaque; the temperature range is ambient to 800degC. The results are analyzed and compared with those predicted by several models from the literature","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126749277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Athermal annealing of silicon implanted layer: beyond the light","authors":"B. Lojek","doi":"10.1109/RTP.2004.1441894","DOIUrl":"https://doi.org/10.1109/RTP.2004.1441894","url":null,"abstract":"The mechanism of annealing silicon implanted layers has been a subject of debate for more than three decades. The great majority of the research work is restricted to only phenomenological results and elaborating changes in the resistivity of annealed layers. Less obvious parameters such as mobility or carrier lifetime are investigated only occasionally. Restrictions on the duration of thermal exposure, as dictated by state-of-the art semiconductor processing of devices, leads to the application of laser or optical irradiation as a processing technology. The presence of a plasma, generated by intense radiation, significantly alters the mechanism and time scale of energy deposition and heat dissipation. This paper discusses the physical processes involved in deposition, thermalization, and heat dissipation during the wafer irradiation. A novel non-thermal annealing approach based on the coherent excitation of phonons is proposed","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132074770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimal design of pulse forming networks and flashlamps for thermal flash processes","authors":"M. Barak","doi":"10.1109/RTP.2004.1441940","DOIUrl":"https://doi.org/10.1109/RTP.2004.1441940","url":null,"abstract":"The design of electrical pulse forming networks (PFN), using multiple coils and energy storage capacitors, has a profound effect on the intensity and temporal shape of the radiant flash emitted from a flashlamp. In addition, the geometrical dimensions of a flashlamp control its electrical impedance (i.e. its interaction with the PFN), and also its explosion energy (i.e. its lifetime expectancy). We present a simple, non iterative algorithm for optimizing the electrical and geometrical design of a bank of flashlamps connected to a high order (multi-section) PFN for use in thermal flash processes. We also describe a full scale 160 kJ system for flash annealing of 300 mm wafers, which was built in our laboratory according to the procedure presented here","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127409451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wet rapid thermal oxidation of vertical cavity surface emitting laser structures with pyrogenic steam generator","authors":"T. Gutt, H. Chung, G. Feldmeyer","doi":"10.1109/RTP.2004.1441950","DOIUrl":"https://doi.org/10.1109/RTP.2004.1441950","url":null,"abstract":"In this article, the successful application of rapid thermal oxidation (RTO) with steam ambient for the selective oxidation of high aluminum containing embedded AlGaAs layer for the formation of current aperture in VCSELs is reported. The steam generation is achieved by the pyrogenic steam generation approach in which hydrogen and oxygen gas mixture is converted into steam by autoignition. Comparing to conventional furnace oxidation, steam-RTO showed a 6 times higher oxidation rate and an excellent oxidation uniformity across 4 inch wafers. It was also observed that after steam-RTO the Cr/Pt/Au p-type contacts had a 50% reduction in specific contact resistance compared to those oxidized in a conventional furnace","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126718338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Formation of advanced silicides using single wafer rapid thermal furnace in the temperature range of 200/spl deg/ - 1000/spl deg/C","authors":"J. Foggiato, W. Yoo, T. Fukada, T. Murakami, K. Kang","doi":"10.1109/RTP.2004.1441945","DOIUrl":"https://doi.org/10.1109/RTP.2004.1441945","url":null,"abstract":"Various suicides are being used as ohmic contact materials for advanced silicon technologies. Due to the requirements for low contact resistance, no linewidth dependence and minimal thermal budget, different suicides are being adopted and modified to achieve the optimum characteristics. TiSi2 has been used to the 130 nm technology node with CoSi2 to the 100 nm node. Recently NiSi is being used to address 90 nm technologies and beyond. The formation of the various suicides was investigated using a single wafer rapid thermal furnace (SRTF) in the temperature range of 200degC to 1000degC. Utilizing an isothermal cavity process chamber, excellent temperature repeatability and uniformity can be achieved allowing investigation of the temperature sensitivity of the silicide formation. A 2-step process was used to minimize silicon consumption and control the diffusion of metal into the underlying materials, silicon, poly-Si and amorphous Si. The above mentioned suicides were investigated as used in manufacturing and the processing limits determined","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125863066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dynamic surface anneal: activation without diffusion","authors":"D. Jennings, A. Mayur, V. Parihar, Haifan Liang, R. Mcintosh, B. Adams, T. Thomas, J. Ranish, A. Hunter, T. Trowbridge, R. Achutharaman, R. Thakur","doi":"10.1109/RTP.2004.1441892","DOIUrl":"https://doi.org/10.1109/RTP.2004.1441892","url":null,"abstract":"The continued scaling of devices in accordance with Moore's law requires activation of some implants such as the source-drain extensions, SDEs, with as little diffusion as possible. New options in thermal processing are described and compared. Thermal flux annealing is the regime where power density is high enough to cause local heating but not so high as to eliminate heat transfer entirely. If energy is delivered fast enough, i.e.: the power density is high enough, the surface of the wafer can reach useful annealing temperatures before the bulk temperature rises appreciably. Limited heat transfer enables the substrate as a heat sink for rapid device region cool down. Thermal homogenization on the device scale also occurs when the thermal diffusion length is a few tens of microns. Wavelengths for scanning laser are compared as well as broadband flash lamp annealing","PeriodicalId":261126,"journal":{"name":"12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130221702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}