[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review最新文献

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SONOS Technology For Commercial And Military Nonvolatile Memory Applications 商用和军用非易失性存储器应用的SONOS技术
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696961
D. Adams, P. Farfell, M. Jacunski, D. Williams, J. Jakubczak, M. Knoll, J. Murray
{"title":"SONOS Technology For Commercial And Military Nonvolatile Memory Applications","authors":"D. Adams, P. Farfell, M. Jacunski, D. Williams, J. Jakubczak, M. Knoll, J. Murray","doi":"10.1109/NVMT.1993.696961","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696961","url":null,"abstract":"Silicon Oxide Nitride Oxide Semiconductor (SONOS) technology is well suited for military and commercial nonvolatile memory applications. Excellent long term memory retention, radiation hardness, and endurance has been demonstrated with this technology. This paper will summarize our data in these areas for SONOS technology.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124137354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
High G Impact Resistant Digital Data Recorder For Missile Flight Testing 用于导弹飞行试验的高G抗冲击数字数据记录仪
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696966
J. W. Hill-Lindsay, J. Yuen
{"title":"High G Impact Resistant Digital Data Recorder For Missile Flight Testing","authors":"J. W. Hill-Lindsay, J. Yuen","doi":"10.1109/NVMT.1993.696966","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696966","url":null,"abstract":"Traditionally, real time test data from flight testing of missile systems is acquired via radio telemetry. Although telemetry data linking is a well established technology, care is still required when designing this type of instrumentation system. Electrical, mechanical and aerodynamic interferences of the telemetry data link must be carefully considered as the hardware is designed into the test vehicle. Test environments, range conditions and support of elaborate ground based receiving and data reduction stations all add to the complexity and cost of radio telemetry data acquisition. In addition, evolution of many weapon system designs from guided to \"smart\" to \"brilliant\" has greatly increased the difficulty in acquiring and tracking an autonomous test vehicle (especially those test programs requiring multiple test vehicles in the air simultaneously). This paper presents the design and testing of a low cost alternative to telemetry based flight test data acquisition; an onboard high G impact survivable Flight Data Recorder (FDR).","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122090491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A SONOS Nonvolatile Memory Cell For Semiconductor Disk Application 半导体磁盘用SONOS非易失性存储单元
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696955
M. French, H. Sathianathan, M. White
{"title":"A SONOS Nonvolatile Memory Cell For Semiconductor Disk Application","authors":"M. French, H. Sathianathan, M. White","doi":"10.1109/NVMT.1993.696955","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696955","url":null,"abstract":"AbstracG A SONOS EEPROM array with a true 5 volt programming voltage is proposed. An analytical expression for the change in threshold voltage as a function of time is derived as a guideline for scaling the SONOS nonvolatile memory element. An improved nonvolatile memory transistor is obtained by decreasing the tunnel oxide thickness for 20A to 18A and increasing the nitride trap density. With further reduction of the tunnel oxide thickness from 18A to 1IA , the crossover time (intersection of the erase/write curves) is improved from 60 ms to 3 ms.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126859616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
NPS-001 Ferro A Thin-film Ferroelectric Space Experiment NPS-001铁A薄膜铁电空间实验
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696938
R. L. Phelps
{"title":"NPS-001 Ferro A Thin-film Ferroelectric Space Experiment","authors":"R. L. Phelps","doi":"10.1109/NVMT.1993.696938","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696938","url":null,"abstract":"","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117290957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The New Generation Of High Performance Flash Memories 新一代高性能闪存
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696954
A. Patel
{"title":"The New Generation Of High Performance Flash Memories","authors":"A. Patel","doi":"10.1109/NVMT.1993.696954","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696954","url":null,"abstract":"With the AerospaceDefense indusn y s growing demand for improved reliability, performance, and ruggedness in nonvolatile memories, Flash devices have entered the industry. The new generation of Flash memories not only provide better reliability and system performance, but also lower power consumption, a flexible sector architecture, and simplified design implementation.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125389244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Storage: What Was The Dream? Has It Been Realized? 光存储:梦想是什么?实现了吗?
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696964
G. Knight, B. Root
{"title":"Optical Storage: What Was The Dream? Has It Been Realized?","authors":"G. Knight, B. Root","doi":"10.1109/NVMT.1993.696964","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696964","url":null,"abstract":"","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132779243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Architecture Of Wafer Scale Memories With Giant Magneto-resistance Memory Cells 超大磁阻存储单元晶圆级存储器的结构
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696963
K. Spears, A.V. Pohm, J. Daughton, R. Sinclair, J. Brown
{"title":"The Architecture Of Wafer Scale Memories With Giant Magneto-resistance Memory Cells","authors":"K. Spears, A.V. Pohm, J. Daughton, R. Sinclair, J. Brown","doi":"10.1109/NVMT.1993.696963","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696963","url":null,"abstract":"For practical wafer scale memories to be achieved, the memory cells in the structure must have a number of properties. First the memory cells must be non-volatile so that unloading on shut down and loading on start up are not necessary. Secondly, it should be possible to power up the cells in a short time and shut them off quickly so that only a small fraction of the wafer is powered at one time. The cells should have infinite write and read capability with cycle times of at most a few microseconds. It must be possible to make small sub-sections of the wafer with high yield with provisions to discard malfunctioning sub-sections. Simple bus structures must be possible to supply power and carry addresses and signals. The cells should be simple to make with few masking steps and have a high density set by minimum metal pitch for two layers of metal (1). To provide economical packaging, the memory cells should integrate with the semiconductor drive electronics.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116826774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ferroelectric-CMOS Nonvolatile Memory Development 铁电cmos非易失性存储器开发
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696949
R.D. Nasby, P. McWhorter, M. Knoll
{"title":"Ferroelectric-CMOS Nonvolatile Memory Development","authors":"R.D. Nasby, P. McWhorter, M. Knoll","doi":"10.1109/NVMT.1993.696949","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696949","url":null,"abstract":"Introduction: A Ferroelectric-CMOS nonvolatile memory technology is being developed at Sandia National Laboratories. Process integration, design and performance issues are being addressed and the technology is being evaluated for applicability to Sandia missions and commercialization. Two basic versions of a 256 bit prototype memory have been designed and fabricated using sol-gel PZT. Tests have yielded fully functional ferroelectric, FE, nonvolatile memories. Program and Design: The program focuses on the development of a 256 bit memory with conservative design rules in order to emphasize ferroelectric performance and process integration issues while not being dominated by circuit density issues and small layout tolerances. The typical feature size is 4 microns and the FE capacitor is 5x5 microns. The two design versions are a dynamic RAM type memory and a shadow RAM array. The memory cell in the DRAM array consists of 4 transistors (2 complementary pair access gates) and two ferroelectric capacitors (bit and not-bit) as shown in Fig. 1. A differential latch sense amplifier is used to detect lhe voltage difference between bit","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127358168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultrahigh Density Miniature Disk Drive Technology 超高密度微型磁盘驱动器技术
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696943
M. R. Kryder
{"title":"Ultrahigh Density Miniature Disk Drive Technology","authors":"M. R. Kryder","doi":"10.1109/NVMT.1993.696943","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696943","url":null,"abstract":"The Engineering Research Center in Data Storage Systems at Carnegie Mellon University is pursuing disk drive technology with astorage density of 10 Gbit/in2. Such a high storage density will make it possible to store over 1 GByte in sub-one-inch disk drives. At such a size, disk drives will no longer be computer peripherals, but rather components which will be attached onto PC boards, much like RAMchips and microprocessors are today. This small size will make it possible to use them in arrays, even €or personal computer applications. This will enable fastex effective access times, higher data rates and higher reliability through miniaturization and redundancy. To make the above technology possible, advanced low-noise thin film disk media with coercivities in the range of 3000 Oe, high magnetization (1600 emu/cc) magnetic write heads with flat frequency response to 200 MHz, magnetoresistive read heads and novel head-disk interfaces are being developed. Thin films of SmCo/Cr offer coercivities in excess of 3000 Oe. Recording tests indicate excellent low-noise performance and good overwrite characteristics in spite of the high coercivity. Sputtered thin film Ba-femte media have also been made with coercivities in excess of 3000 Oe. Either perpendicular or inplane orientation may be achieved by proper control of sputtering parameters. Athough the remanent magnetization (3 15 emu/ cc) is lower than achievable in metallic media, thin film barium femte media are expected to require no overcoat and therefore will have less spacing loss than metallic thin film media. Thin film inductive recording heads made of FeAlN multilayer materials offer not only high saturation flux density (20,000 Gauss), but excellent frequency response to beyond 200 MHz. Head-disk interfaces involving liquids, probe heads and micromachined miniature sliders are all being pursued as means to achieve head-media spacings of the order of 25 nm. This paper will describe the progress in each of these areas and discuss what maybe expected from future magnetic disk drives.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130119699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrahigh Density Magneto-optic Recording Technology 超高密度磁光记录技术
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696962
M. Kryder
{"title":"Ultrahigh Density Magneto-optic Recording Technology","authors":"M. Kryder","doi":"10.1109/NVMT.1993.696962","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696962","url":null,"abstract":"Magneto-optic recording technology emerged into the marketplace in 1989 and by 1991 had total sales of $261 million. Sales in excess of $1 billion are projected in the near future. The areal density of the initial products was about 200 h4bits/inz, but second generation products with storage densities of factor of two higher are now emerging. Much higher areal densities can be expected in the future. In this paper, the evolution of the technology toward a storage density of 10 Gbit/inz will be considered. It will be argued that, by using 400 nm wavelength light from new laser sources now under development, higher numerical aperature objective lenses, improved position error signal generation techniques, advanced modulation and error correction codes and zone bit recording, the areal storage density of magneto-optic drives will continue to increase and likely keep pace with mangetic disk technology. For this to occur, new magneto-optic recording materials are required. Both garnets and Co/Pt multilayers have potential for meeting the requirements. Both have large magneto-optic effects in the blue wavelength spectrum. It is desired to reduce the media noise level in both materials, but recent results indicate this problem will likely be solved. Because magneto-optical heads are today made of discrete optical components, they are massive and large in comparison to magnetic recording heads. This has so far prevented rapid seek times and putting more than one disk on a spindle. Advances in head technology, involving fiber optics and electro-optic beam deflection could provide rapid track-to-track seeks and more compact heads. Furthermore, the recent demonstration of 45 Gbit/in2 recording density by using near-field techniques suggests that magnetooptic drives could eventually compete directly with Winchester disk drives. This talk will review the status of magneto-optic recording technology in light of the above developments.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"403 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130291931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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