Ultrahigh Density Miniature Disk Drive Technology

M. R. Kryder
{"title":"Ultrahigh Density Miniature Disk Drive Technology","authors":"M. R. Kryder","doi":"10.1109/NVMT.1993.696943","DOIUrl":null,"url":null,"abstract":"The Engineering Research Center in Data Storage Systems at Carnegie Mellon University is pursuing disk drive technology with astorage density of 10 Gbit/in2. Such a high storage density will make it possible to store over 1 GByte in sub-one-inch disk drives. At such a size, disk drives will no longer be computer peripherals, but rather components which will be attached onto PC boards, much like RAMchips and microprocessors are today. This small size will make it possible to use them in arrays, even €or personal computer applications. This will enable fastex effective access times, higher data rates and higher reliability through miniaturization and redundancy. To make the above technology possible, advanced low-noise thin film disk media with coercivities in the range of 3000 Oe, high magnetization (1600 emu/cc) magnetic write heads with flat frequency response to 200 MHz, magnetoresistive read heads and novel head-disk interfaces are being developed. Thin films of SmCo/Cr offer coercivities in excess of 3000 Oe. Recording tests indicate excellent low-noise performance and good overwrite characteristics in spite of the high coercivity. Sputtered thin film Ba-femte media have also been made with coercivities in excess of 3000 Oe. Either perpendicular or inplane orientation may be achieved by proper control of sputtering parameters. Athough the remanent magnetization (3 15 emu/ cc) is lower than achievable in metallic media, thin film barium femte media are expected to require no overcoat and therefore will have less spacing loss than metallic thin film media. Thin film inductive recording heads made of FeAlN multilayer materials offer not only high saturation flux density (20,000 Gauss), but excellent frequency response to beyond 200 MHz. Head-disk interfaces involving liquids, probe heads and micromachined miniature sliders are all being pursued as means to achieve head-media spacings of the order of 25 nm. This paper will describe the progress in each of these areas and discuss what maybe expected from future magnetic disk drives.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMT.1993.696943","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The Engineering Research Center in Data Storage Systems at Carnegie Mellon University is pursuing disk drive technology with astorage density of 10 Gbit/in2. Such a high storage density will make it possible to store over 1 GByte in sub-one-inch disk drives. At such a size, disk drives will no longer be computer peripherals, but rather components which will be attached onto PC boards, much like RAMchips and microprocessors are today. This small size will make it possible to use them in arrays, even €or personal computer applications. This will enable fastex effective access times, higher data rates and higher reliability through miniaturization and redundancy. To make the above technology possible, advanced low-noise thin film disk media with coercivities in the range of 3000 Oe, high magnetization (1600 emu/cc) magnetic write heads with flat frequency response to 200 MHz, magnetoresistive read heads and novel head-disk interfaces are being developed. Thin films of SmCo/Cr offer coercivities in excess of 3000 Oe. Recording tests indicate excellent low-noise performance and good overwrite characteristics in spite of the high coercivity. Sputtered thin film Ba-femte media have also been made with coercivities in excess of 3000 Oe. Either perpendicular or inplane orientation may be achieved by proper control of sputtering parameters. Athough the remanent magnetization (3 15 emu/ cc) is lower than achievable in metallic media, thin film barium femte media are expected to require no overcoat and therefore will have less spacing loss than metallic thin film media. Thin film inductive recording heads made of FeAlN multilayer materials offer not only high saturation flux density (20,000 Gauss), but excellent frequency response to beyond 200 MHz. Head-disk interfaces involving liquids, probe heads and micromachined miniature sliders are all being pursued as means to achieve head-media spacings of the order of 25 nm. This paper will describe the progress in each of these areas and discuss what maybe expected from future magnetic disk drives.
超高密度微型磁盘驱动器技术
卡耐基梅隆大学数据存储系统工程研究中心正在研究存储密度为10gbit /in2的磁盘驱动器技术。如此高的存储密度将使在1英寸以下的磁盘驱动器中存储超过1gbyte成为可能。在这样的尺寸下,磁盘驱动器将不再是计算机的外设,而是连接到PC板上的组件,就像今天的RAMchips和微处理器一样。这种小尺寸将使它们可以在阵列中使用,甚至可以在€或个人计算机应用中使用。这将通过小型化和冗余实现更快的有效访问时间、更高的数据速率和更高的可靠性。为了使上述技术成为可能,正在开发具有3000oe矫顽力范围内的先进低噪声薄膜磁盘介质,高磁化强度(1600 emu/cc)频率响应为200mhz的磁写入头,磁阻读磁头和新型磁头-磁盘接口。SmCo/Cr薄膜的矫顽力超过3000 Oe。记录测试表明,该材料具有良好的低噪声性能和良好的覆盖特性,尽管其矫顽力很高。溅射薄膜Ba-femte介质的矫顽力也已超过3000欧。通过适当控制溅射参数,可以实现垂直或平面定向。虽然剩余磁化强度(315 emu/ cc)低于金属介质,但薄膜钡钛介质预计不需要涂层,因此比金属薄膜介质具有更小的间距损失。由FeAlN多层材料制成的薄膜感应记录头不仅具有高饱和磁通密度(20,000高斯),而且具有超过200 MHz的出色频率响应。包括液体、探头和微机械微型滑块在内的磁头-磁盘接口都是实现25纳米左右的磁头-介质间距的手段。本文将描述这些领域的进展,并讨论未来磁盘驱动器的预期。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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