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[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review最新文献

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Vertical Bloch Line Storage Technology 垂直Bloch线存储技术
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696937
R. Katti
{"title":"Vertical Bloch Line Storage Technology","authors":"R. Katti","doi":"10.1109/NVMT.1993.696937","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696937","url":null,"abstract":"Vertical Bloch Line (VBL) memory is a recently conceived, integrated, magnetic, solid-state, block-access storage technology which offers the potential of greater than 1 Gbit/cm2 areal storage density, gigabit per second data rates, and submillisecond average access times simultaneously at relatively low mass, volume, and power values when compared to alternative technologies. VBLs are micromagnetic structures within magnetic domain walls which can be manipulated using magnetic fields from integrated conductors. The presence or absence of VBL pairs are used to store binary information. At present, efforts are being directed at developing a single-chip memory using 25 Mbit/cm2 technology in magnetic garnet material which integrates, at a single operating point, the writing, storage, reading, and amplification functions needed in a memory. This paper describes the current design architecture and functional elements for a VBL","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114815398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonvolatile SRAM - The Next Generation 非易失性SRAM -下一代
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696942
C. E. Herdt
{"title":"Nonvolatile SRAM - The Next Generation","authors":"C. E. Herdt","doi":"10.1109/NVMT.1993.696942","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696942","url":null,"abstract":"The successful introduction of the first fast high density nonvolatile static RAM (nvSRAM) into both commercial and military arenas is now being followed by the development of the next generation: 256K nvSRAMs. At the time of Simtek’s initial commercialization of 64K nvSRAMs, other single chip nonvolatile RAMS had a maximum density of 4K and were over four times slower. This paper quickly reviews the current product offering which changed the market for nonvolatile RAMS. It then describes the similarities between the 64K and 256K product families and highlights their differences.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123662075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Space Qualified Magnetic Disk 空间合格磁盘
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696945
A. Treff, J.F. Forella
{"title":"Space Qualified Magnetic Disk","authors":"A. Treff, J.F. Forella","doi":"10.1109/NVMT.1993.696945","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696945","url":null,"abstract":"Highly reliable data storage for satellites and spacecraft is a challenging technology. The space environment is a unique combination of many environmental factors which impact the reliability and even the very survival of electronic systems. The need for space qualified memory is becoming even more important with the advent of on-board data processing which requires rapid access to large data bases. The overall design of the magnetic &sk must also take into account some unique design considerations. All materials must be chosen with material outgassing as a consideration. The design must also provide an operational life of several years of unattended operation. The reliability of the parts used in the design must meet space requirements and the qualified design configuration must be controlled to ensure continuedreliability through the inevitable component and manufacturing process changes. This paper describes the unique environmental and design considerations that must be taken into account for a magnetic disk that is designed to operate for years in the space environment.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124803998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Opportunities In The Midst Of Change 变革中的机遇
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696934
H. Bentley
{"title":"Opportunities In The Midst Of Change","authors":"H. Bentley","doi":"10.1109/NVMT.1993.696934","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696934","url":null,"abstract":"Considering the forces of change sweeping the world-the demise of the Soviet monolith, the winding down of the U.S. defense-industrial base, the growing challenge from foreign producers to domestic commercial markets, the recognition that industrial espionage is the newest threat to national security-a veritable host of unknown devils have been loosed on the world at a time that the United States is facing both deficit and debt.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"62 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114428971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Synchronous 1Mb (64k X 16) Burst EPROM 一个同步1Mb (64k X 16)突发EPROM
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696959
P. Sastry, K. Dinh, P. Le, E. King, D. Wenzbauer, L. Cropper, H. Shumway, W. Breinholt, P. Lubeck, D. Brahmbhatt, M. Gill
{"title":"A Synchronous 1Mb (64k X 16) Burst EPROM","authors":"P. Sastry, K. Dinh, P. Le, E. King, D. Wenzbauer, L. Cropper, H. Shumway, W. Breinholt, P. Lubeck, D. Brahmbhatt, M. Gill","doi":"10.1109/NVMT.1993.696959","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696959","url":null,"abstract":"A new, high performance 1 Mb( 64K X 16 ) EPROM (NM27P6841) incorporating a synchronous, glueless interface to the Motorola 68040 and 68EC040 microprocessors, has been designed. The 90 ns initial access time and the 30 ns burst access time allow up to a 16 byte “burst” access in 4-1-11 bus cycles @ 33Mhz. This improves the bus bandwidth performance by 128% over high performance 8-bit EPROMs. In addition, it provides a system solution at a cost lower than “SRAM shadowing” used in the past.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116779561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Disk Emulation Using Flash Memory 磁盘仿真使用闪存
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696953
A. Friedman
{"title":"Disk Emulation Using Flash Memory","authors":"A. Friedman","doi":"10.1109/NVMT.1993.696953","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696953","url":null,"abstract":"Making the flash disk Wly emulate magnetic disks is what a Flash File System is all about. Compatibility Issues File Systems in General Since mass storage technology such as disks have been around for many years, standards governing disks and the interface to them have become entrenched in the military industry. Flash memory technology can be used as the media for mass storage and for upgrading from magnetic disks, if the appropriate system issues are addressed.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121688564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ferroelectric PZT Thin Films For Low-voltage Nonvolatile Memory 低压非易失性存储器用铁电PZT薄膜
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696948
R. Moazzami, P. Maniar, R.E. Jones, A. C. Campbell, C. Mogab
{"title":"Ferroelectric PZT Thin Films For Low-voltage Nonvolatile Memory","authors":"R. Moazzami, P. Maniar, R.E. Jones, A. C. Campbell, C. Mogab","doi":"10.1109/NVMT.1993.696948","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696948","url":null,"abstract":"This study investigates the scaling potential of sol gelderived ferroelectric lead zirconate titanate (PZT) thin films for future nonvolatile memories. Ferroelectric hysteresis loops are exploited to demonstrate nonvolatile memory operation at internal voltages as low as 1.5V with a readwrite endurance cycles. Fenroelectric PZT capacitor technology holds promise as an alternative to conventional floating gate nonvolatile memory technologies for low-voltage low-power nonvolatile memories.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127527589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High Density Mrm Memory Technology In Advanced Signal, Data, Control Processors And Other Memory Systems 高密度Mrm存储技术在先进的信号，数据，控制处理器和其他存储系统
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696946
R. L. Wiker
{"title":"High Density Mrm Memory Technology In Advanced Signal, Data, Control Processors And Other Memory Systems","authors":"R. L. Wiker","doi":"10.1109/NVMT.1993.696946","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696946","url":null,"abstract":"","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127853281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MNOS Memory Technology With Oxynitride Thin Films 氮化氧薄膜MNOS存储技术
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696935
V. Kapoor
{"title":"MNOS Memory Technology With Oxynitride Thin Films","authors":"V. Kapoor","doi":"10.1109/NVMT.1993.696935","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696935","url":null,"abstract":"Memory properties of a metal-oxynitride-oxide-silicon (MNOS) device were investigated as a function of amount of oxygen and hydrogen impurities in the oxynitride films. The retention and endurance device characteristics improved by 60% and 10/sup 7/ to 10/sup 8/ cycles, respectively, as 13% oxygen was introduced in the oxynitride film. The interface state density decreased from 5.1 to 3.65/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/, with an increase of approximately 21% oxygen in the oxynitride film, and further decreased to 2.1/spl times/10/sup 11/ cm/sup 2/ eV6/sup -1/ after hydrogen annealing. The results indicate that the nonvolatile memory properties of MNOS devices can be altered and considerably improved by incorporating oxygen in the oxynitride film and selecting appropriate processing and annealing conditions. >","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115363083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Changing The Nature Of Change In Semiconductor Technology 改变半导体技术变化的本质
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI: 10.1109/NVMT.1993.696933
R. M. Burger
{"title":"Changing The Nature Of Change In Semiconductor Technology","authors":"R. M. Burger","doi":"10.1109/NVMT.1993.696933","DOIUrl":"https://doi.org/10.1109/NVMT.1993.696933","url":null,"abstract":"","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128346054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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