Ferroelectric PZT Thin Films For Low-voltage Nonvolatile Memory

Abstract

This study investigates the scaling potential of sol gelderived ferroelectric lead zirconate titanate (PZT) thin films for future nonvolatile memories. Ferroelectric hysteresis loops are exploited to demonstrate nonvolatile memory operation at internal voltages as low as 1.5V with a readwrite endurance cycles. Fenroelectric PZT capacitor technology holds promise as an alternative to conventional floating gate nonvolatile memory technologies for low-voltage low-power nonvolatile memories.