A Synchronous 1Mb (64k X 16) Burst EPROM

[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI:10.1109/NVMT.1993.696959

P. Sastry, K. Dinh, P. Le, E. King, D. Wenzbauer, L. Cropper, H. Shumway, W. Breinholt, P. Lubeck, D. Brahmbhatt, M. Gill

引用次数: 0

Abstract

A new, high performance 1 Mb( 64K X 16 ) EPROM (NM27P6841) incorporating a synchronous, glueless interface to the Motorola 68040 and 68EC040 microprocessors, has been designed. The 90 ns initial access time and the 30 ns burst access time allow up to a 16 byte “burst” access in 4-1-11 bus cycles @ 33Mhz. This improves the bus bandwidth performance by 128% over high performance 8-bit EPROMs. In addition, it provides a system solution at a cost lower than “SRAM shadowing” used in the past.

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一个同步1Mb (64k X 16)突发EPROM

设计了一种新的高性能1mb (64K X 16) EPROM (NM27P6841)，该EPROM结合了与摩托罗拉68040和68EC040微处理器的同步无胶接口。90 ns的初始访问时间和30 ns的突发访问时间允许在4-1-11总线周期@ 33Mhz中最多16字节的“突发”访问。这使得总线带宽性能比高性能8位eprom提高了128%。此外，它提供了一种成本低于过去使用的“SRAM阴影”的系统解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review

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