Vertical Bloch Line Storage Technology

Abstract

Vertical Bloch Line (VBL) memory is a recently conceived, integrated, magnetic, solid-state, block-access storage technology which offers the potential of greater than 1 Gbit/cm2 areal storage density, gigabit per second data rates, and submillisecond average access times simultaneously at relatively low mass, volume, and power values when compared to alternative technologies. VBLs are micromagnetic structures within magnetic domain walls which can be manipulated using magnetic fields from integrated conductors. The presence or absence of VBL pairs are used to store binary information. At present, efforts are being directed at developing a single-chip memory using 25 Mbit/cm2 technology in magnetic garnet material which integrates, at a single operating point, the writing, storage, reading, and amplification functions needed in a memory. This paper describes the current design architecture and functional elements for a VBL