D. Adams, P. Farfell, M. Jacunski, D. Williams, J. Jakubczak, M. Knoll, J. Murray
{"title":"商用和军用非易失性存储器应用的SONOS技术","authors":"D. Adams, P. Farfell, M. Jacunski, D. Williams, J. Jakubczak, M. Knoll, J. Murray","doi":"10.1109/NVMT.1993.696961","DOIUrl":null,"url":null,"abstract":"Silicon Oxide Nitride Oxide Semiconductor (SONOS) technology is well suited for military and commercial nonvolatile memory applications. Excellent long term memory retention, radiation hardness, and endurance has been demonstrated with this technology. This paper will summarize our data in these areas for SONOS technology.","PeriodicalId":254731,"journal":{"name":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"SONOS Technology For Commercial And Military Nonvolatile Memory Applications\",\"authors\":\"D. Adams, P. Farfell, M. Jacunski, D. Williams, J. Jakubczak, M. Knoll, J. Murray\",\"doi\":\"10.1109/NVMT.1993.696961\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon Oxide Nitride Oxide Semiconductor (SONOS) technology is well suited for military and commercial nonvolatile memory applications. Excellent long term memory retention, radiation hardness, and endurance has been demonstrated with this technology. This paper will summarize our data in these areas for SONOS technology.\",\"PeriodicalId\":254731,\"journal\":{\"name\":\"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NVMT.1993.696961\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMT.1993.696961","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SONOS Technology For Commercial And Military Nonvolatile Memory Applications
Silicon Oxide Nitride Oxide Semiconductor (SONOS) technology is well suited for military and commercial nonvolatile memory applications. Excellent long term memory retention, radiation hardness, and endurance has been demonstrated with this technology. This paper will summarize our data in these areas for SONOS technology.