低压非易失性存储器用铁电PZT薄膜

[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI:10.1109/NVMT.1993.696948

R. Moazzami, P. Maniar, R.E. Jones, A. C. Campbell, C. Mogab

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引用次数: 6

摘要

本研究探讨了溶胶凝胶衍生的铁电锆钛酸铅(PZT)薄膜在未来非易失性存储器中的结垢潜力。利用铁电磁滞回线来演示在低至1.5V的内部电压下具有读写持久周期的非易失性存储器操作。fenoelectric PZT电容器技术有望替代传统的浮栅非易失性存储器技术，用于低压低功耗非易失性存储器。

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Ferroelectric PZT Thin Films For Low-voltage Nonvolatile Memory

This study investigates the scaling potential of sol gelderived ferroelectric lead zirconate titanate (PZT) thin films for future nonvolatile memories. Ferroelectric hysteresis loops are exploited to demonstrate nonvolatile memory operation at internal voltages as low as 1.5V with a readwrite endurance cycles. Fenroelectric PZT capacitor technology holds promise as an alternative to conventional floating gate nonvolatile memory technologies for low-voltage low-power nonvolatile memories.

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[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review

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