Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)最新文献_第5页

Thermoelectric properties of Bi-doped half-Heusler alloys 双掺杂半heusler合金的热电性能

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843333

C. Uher, J. Yang, G. Meisner

引用次数: 4

Thermoelectric figure of merit enhancement in Si and SiGe quantum wires due to spatial confinement of acoustic phonons 由于声子的空间限制，Si和SiGe量子线的热电图性能增强

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843363

A. Khitun, A. Balandin, K. Wang, G. Chen

引用次数: 0

The effect of various filler atoms on the thermoelectric properties of ternary skutterudites 不同填料原子对三元角脱石热电性能的影响

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843325

H. Sellinschegg, D.C. Johnson, G. Nolas, T. Tritt

引用次数: 1

Improved thermoelectric material of n-type based on (Bi,Sb)/sub 2/Te/sub 3/ for temperatures below 200 K 基于(Bi,Sb)/sub 2/Te/sub 3/的n型热电材料的改进，温度低于200 K

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843397

V. Kutasov, L. N. Lukyanova, P. Konstantinov

引用次数: 0

Thermoelectric properties of /spl beta/-FeSi/sub 2/ with oxide-particles doping 氧化粒子掺杂/spl β /-FeSi/sub - 2/的热电性能

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843354

H. Suzuki, S. Mochizuki, S. Sugihara, K. Shiraishi, T. Kajikawa

引用次数: 1

Thermoelectric transport in multivalley PbTe/PbEuTe quantum wells 多谷PbTe/PbEuTe量子阱中的热电输运

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843411

A. Casian, Z. Dashevsky, V. Kantser, H. Scherrer, I. Sur, Adrian Sandu

{"title":"Thermoelectric transport in multivalley PbTe/PbEuTe quantum wells","authors":"A. Casian, Z. Dashevsky, V. Kantser, H. Scherrer, I. Sur, Adrian Sandu","doi":"10.1109/ICT.1999.843411","DOIUrl":"https://doi.org/10.1109/ICT.1999.843411","url":null,"abstract":"The thermoelectric properties of PbTe/PbEuTe quantum wells are investigated theoretically employing a more realistic well model than it was used up to now. The carrier scattering both on optical and acoustical phonons is considered. The electrical conductivity and Seebeck coefficient are calculated using the variational method taking into account the intersubband scattering. It is found that for decreasing well widths, the electrical conductivity decreases for [100] oriented structures, and increases for [111] ones. The thermopower is higher in [100] oriented structures than in [111] ones, especially for very thin wells. The power factor is also higher in [100] wells, but the more realistic is the well model the lower is the value of power factor. So, when the dependence of effective mass on well width is taken into account, the power factor for very thin wells decreases by 14% in [100] oriented quantum wells, and by 12% in [111] ones. The power factor is calculated as a function of carrier concentration and the optimal concentrations are determined for quantum wells of different heights. The results of recent experiments are discussed.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"01 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124512787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Control of antisite defect effect of Sb/sub 2/Te/sub 3/ thin films Sb/sub / 2/Te/sub / 3薄膜反位缺陷效应的控制

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843482

Yunki Kim, Sunglae Cho, A. DiVenere, G. Wong, J. Ketterson

引用次数: 0

Fabrication of milliwatt modules 毫瓦模块的制造

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843441

N. Elsner, J. Bass, S. Ghamaty, C. C. Morris, N. Baker, J. Bass

引用次数: 2

Skutterudite based new thermoelectric compounds. Cerium filled Ni substituted skutterudites Ce/sub y/Fe/sub 4-x/Ni/sub x/Sb/sub 12/ type XANES and neutron diffraction studies 基于角菱矿的新型热电化合物。铈填充镍取代角长石Ce/sub - y/Fe/sub - 4-x/Ni/sub -x/ Sb/sub - 12/型XANES及中子衍射研究

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843323

L. Chapon, D. Ravot, J. Tedenac, F. Bouree-Vignerons

引用次数: 0

High temperature thermoelectric properties of MNiSn (M=Zr, Hf) MNiSn (M=Zr, Hf)的高温热电性能

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843335

B. Cook, G. Meisner, J. Yang, C. Uher

{"title":"High temperature thermoelectric properties of MNiSn (M=Zr, Hf)","authors":"B. Cook, G. Meisner, J. Yang, C. Uher","doi":"10.1109/ICT.1999.843335","DOIUrl":"https://doi.org/10.1109/ICT.1999.843335","url":null,"abstract":"The high temperature transport properties in a series of intermetallic half-Heusler alloys of the form MNiSn, where M=Zr, Hf, have been examined. The semiconducting nature of these materials due to the formation of a pseudo-gap in the density of states make them promising candidates for intermediate temperature thermoelectric applications. Samples of pure and Sb-doped ZrNiSn, HfNiSn, and (Zr-Hf)NiSn were prepared by arc melting and homogenized by heat treatment. Phase purity was determined by X-ray diffraction and the microstructures were examined by scanning electron microscopy. The temperature dependence of the electrical resistivity and Seebeck coefficient of these samples was characterized between 300 K and 1050 K. At room temperature, the data match closely with the results recently reported by us. The thermopower initially increases with temperature, exhibits a broad maximum between 400 K and 600 K, and decreases to a common value, characteristic of the magnitude of the forbidden gap. The electrical resistivity decreases with temperature following a T/sup -1/ dependence. A correlation between the magnitude of the thermopower and the Hf/Zr ratio was observed. An estimate of the magnitude of the gap was made from a plot of 1n(/spl sigma/) versus reciprocal temperature, giving a value of 0.21 eV which is in good agreement with previous estimates. The effects of antimony and bismuth doping on the electrical properties are discussed.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124582082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10