Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)最新文献

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Component distribution during the melting of solid solution (Bi,Sb)/sub 2/Te/sub 3/ grown from the excessive tellurium melt 过量碲熔体中生长的固溶体(Bi,Sb)/sub - 2/Te/sub - 3/熔融过程中的组分分布
A. I. Anukhin
{"title":"Component distribution during the melting of solid solution (Bi,Sb)/sub 2/Te/sub 3/ grown from the excessive tellurium melt","authors":"A. I. Anukhin","doi":"10.1109/ICT.1999.843350","DOIUrl":"https://doi.org/10.1109/ICT.1999.843350","url":null,"abstract":"Based on general assumptions about the phase equilibrium diagram in the system Bi-Sb-Te near solid solutions (Bi,Sb)/sub 2/Te/sub 3/, the component distribution under various methods of melting has been studied. By the method of successive approximation we calculated the tellurium distribution along the ingots of solid solutions (Bi,Sb)/sub 2/Te/sub 3/ grown from the melt with excessive tellurium. Analytic expressions of the changes of tellurium concentration in the melt while growing (Bi,Sb)/sub 2/Te/sub 3/ by normal crystallisation, zone melting, by a method with floating crucible, and by zone levelling are obtained. With all methods of crystallisation, except for zone levelling, continuous changes of tellurium concentration in the melt are present. This predefines the non-uniform distribution of dissolved tellurium concentration in the solid phase and as a result non-uniform distribution of properties along the obtained ingots of solid solutions. The only one and simple to implement method in order to ensure approximately uniform properties distribution along the ingots could be zone levelling. Nevertheless approximate integrated equation of zone melting considering the dependence of solid phase antimony distribution coefficient on tellurium concentration in the melt shows that under zone levelling a slight non-uniformity of tellurium distribution in the solid phase is also observed.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"238 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116465031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Complex ternary mixed layered tetradymite-like chalcogenides as novel thermoelectrics 作为新型热电材料的复杂三元混合层状四钇硫属化合物
L. E. Shelimova, P. Konstantinov, O. G. Karpinsky, E. S. Avilov, M. Kretova, J. Fleurial
{"title":"Complex ternary mixed layered tetradymite-like chalcogenides as novel thermoelectrics","authors":"L. E. Shelimova, P. Konstantinov, O. G. Karpinsky, E. S. Avilov, M. Kretova, J. Fleurial","doi":"10.1109/ICT.1999.843446","DOIUrl":"https://doi.org/10.1109/ICT.1999.843446","url":null,"abstract":"The nGeTe-mBi/sub 2/Te/sub 3/ and nGeTe-mSb/sub 2/Te/sub 3/ homologous series mixed layered (Mt.) compounds have been investigated by X-ray diffraction. A variety of the ML long-period structures is discovered in the GeTe-Bi/sub 2/Te/sub 3/ and GeTe-Sb/sub 2/Te/sub 3/ quasi-binary systems. Temperature dependencies of Hall coefficient, electrical resistivity and Seebeck coefficient have been measured in a wide temperature range. A mixed carrier scattering mechanism on acoustic phonons and point defects is proposed to explain the carrier mobility temperature dependence at low temperatures. It is found that the ML compounds are characterized by extremely low lattice thermal conductivity at 300 K: /spl kappa//sub ph/=5-7 mW/cm K.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116860271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermoelectric properties of rhenium disilicide 二硅化铼的热电性质
A. Heinrich, C. Kleint, H. Griessmann, G. Behr, L. Ivanenko, V. Shaposhnikov, J. Schumann
{"title":"Thermoelectric properties of rhenium disilicide","authors":"A. Heinrich, C. Kleint, H. Griessmann, G. Behr, L. Ivanenko, V. Shaposhnikov, J. Schumann","doi":"10.1109/ICT.1999.843358","DOIUrl":"https://doi.org/10.1109/ICT.1999.843358","url":null,"abstract":"Thermoelectric power and electrical conductivity have been investigated of thin films and single crystals of ReSi/sub 1.75/, a small gap semiconductor with E/sub g/=0.15 eV. The single crystals have been prepared by a modified Czochralski method, the films by facing target sputtering and reactive deposition epitaxy. The substrates used include SOS (silicon on sapphire) and Si(111) wafers. With both methods epitaxial stoichiometric ReSi/sub 1.75/ films were obtained. The films undergo a formation process during annealing up to 1000 K. They exhibit a negative thermoelectric power of about -100 /spl mu/V/K within a broad temperature range characteristic for degenerate semiconductors. The single crystals with a composition ReSi/sub 1.8/ show p-type conductivity as polycrystalline films with excess of Si. The quality of the single crystals has still to be improved to get a reference system for thin films.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127032058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical and thermal properties for p-type /spl beta/-FeSi/sub 2/ with Mn and Al double doping Mn和Al双掺杂p型/spl β /-FeSi/sub - 2/的电学和热性能
H. Kaibe, H. Ernst, L. Rauscher, K. Schackenberg, E. Muller, Y. Isoda, I. Nishida
{"title":"Electrical and thermal properties for p-type /spl beta/-FeSi/sub 2/ with Mn and Al double doping","authors":"H. Kaibe, H. Ernst, L. Rauscher, K. Schackenberg, E. Muller, Y. Isoda, I. Nishida","doi":"10.1109/ICT.1999.843351","DOIUrl":"https://doi.org/10.1109/ICT.1999.843351","url":null,"abstract":"p-type /spl beta/-FeSi/sub 2/ doped with Mn and Al was prepared by hot pressing in order to examine the effect of double doping effect on electrical resistivity and thermal conductivity. The Hall coefficient as a function of temperature strongly suggested the existence of double valence bands, which become more pronounced with increasing Mn content. At low temperature around several ten K, an anomalous Hall effect has been observed. It becomes more pronounced and the transition temperature from anomalous non-linear Hall voltage as a function of magnetic induction to normal behavior shifts to higher temperature with increasing Mn content. Thermal conductivity /spl kappa/ for Fe/sub 0.936/Mn/sub 0.064/Al/sub 0.015/Si/sub 1.988/ was 0.048 W/cmK at 900 K, which is 13% lower than that of Fe/sub 0.915/Mn/sub 0.085/Si/sub 2/. Thus, it has been shown that alloying effect by double doping is considerably useful for reduction of K.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130012461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Electrodeposition of CoSb/sub 3/ nanowires CoSb/ sub3 /纳米线的电沉积
J. Behnke, A. Prieto, A. Stacy, T. Sands
{"title":"Electrodeposition of CoSb/sub 3/ nanowires","authors":"J. Behnke, A. Prieto, A. Stacy, T. Sands","doi":"10.1109/ICT.1999.843428","DOIUrl":"https://doi.org/10.1109/ICT.1999.843428","url":null,"abstract":"Materials with the skutterudite crystal structure, such as CoSb/sub 3/, have been demonstrated to be promising in the development of high figure-of-merit thermoelectric materials. Theoretical studies have shown that quantum confinement may produce enhancements in the figure-of-merit. Calculations based on the Kubakaddi model for thermopower of a nanowire have shown that nanowires of CoSb/sub 3/ should produce this enhancement at larger wire diameters than other candidate materials, such as Bi/sub 2/Te/sub 3/. This study has used pulse plating followed by a post anneal treatment to fabricate CoSb/sub 3/ electrochemically from a citrate bath. Initial attempts were also made to deposit cobalt and antimony into a porous anodic aluminum oxide matrix. Porous anodic aluminum oxide was chosen as a host material because of its relatively uniform pore diameter and spacing, its vertical walled \"test tube\" shape, and the high barrier to tunneling that the aluminum oxide provides.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130285006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Micro thermoelectric modules and their application to wristwatches as an energy source 微型热电模块及其在手表上的能源应用
Matsuo Kishi, H. Nemoto, T. Hamao, M. Yamamoto, S. Sudou, M. Mandai, S. Yamamoto
{"title":"Micro thermoelectric modules and their application to wristwatches as an energy source","authors":"Matsuo Kishi, H. Nemoto, T. Hamao, M. Yamamoto, S. Sudou, M. Mandai, S. Yamamoto","doi":"10.1109/ICT.1999.843389","DOIUrl":"https://doi.org/10.1109/ICT.1999.843389","url":null,"abstract":"Microthermoelectric (TE) coolers are currently used in high power electronic devices such as laser diodes to stabilize temperature. With the aim of miniaturizing this technology, we have developed a fabrication technique to create micro-TE modules with a cross-section element size of about 100 /spl mu/m/spl times/100 /spl mu/m and a height of several hundred mm. We have previously reported the cooling properties of a module fabricated by this technique. With the recent advances in micro-electric technology, which has decreased the energy consumption in an electric wristwatch to about 1 /spl mu/W, there has been increased discussion about utilizing these micro-TE modules to generate energy of several /spl mu/W to power a wristwatch. In response, we have developed a micro-TE module with an overall size of 2 /spl times/ 2 /spl times/ 1.3 mm consisting of more than 50 pairs of elements, and have succeeded in making and marketing a TE powered wristwatch. This paper presents the fabrication and the properties of the micro-TE module, as well as the TE powered wristwatch.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131674474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 240
The simple relations to express consumer parameters for two-stage thermoelectric module connected in parallel 两级并联热电模块用户参数的简单表示关系
V. Babin, P. Takhistov
{"title":"The simple relations to express consumer parameters for two-stage thermoelectric module connected in parallel","authors":"V. Babin, P. Takhistov","doi":"10.1109/ICT.1999.843379","DOIUrl":"https://doi.org/10.1109/ICT.1999.843379","url":null,"abstract":"The parallel connection scheme for two-stage thermoelectric modules has been known for a long time, but there have always been difficulties in its calculation. Making some assumptions, it is possible to obtain simple formulas for consumer parameters I/sub max/, Q/sub max/, U/sub max/, /spl Delta/T/sub max/. The thermoelectric properties are accepted to be identical in both stages and independent of the temperature. The correctness of these assumptions is explained. The temperature differences on both stages are admitted to be equal too. The simple formulas for I/sub max/, Q/sub max/, U/sub max/, /spl Delta/T/sub max/ are given. In particular, the maximum temperature difference is defined by the double material figure of merit.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125439825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation and thermoelectric properties of A/sub 8//sup II/B/sub 16//sup III/B/sub 30//sup IV/ clathrate compounds A/sub 8//sup II/B/sub 16//sup III/B/sub 30//sup IV/包合物的制备及热电性能
V. Kuznetsov, L. Kuznetsova, A. Kaliazin, D. Rowe
{"title":"Preparation and thermoelectric properties of A/sub 8//sup II/B/sub 16//sup III/B/sub 30//sup IV/ clathrate compounds","authors":"V. Kuznetsov, L. Kuznetsova, A. Kaliazin, D. Rowe","doi":"10.1109/ICT.1999.843362","DOIUrl":"https://doi.org/10.1109/ICT.1999.843362","url":null,"abstract":"The preparation, characterisation and measurements of the temperature dependence of the transport properties of clathrate compounds Ba/sub 8/Ga/sub 16/Si/sub 30/, Ba/sub 8/Ga/sub 16/Ge/sub 30/, Ba/sub 8/Ga/sub 16/Sn/sub 30/, and Sr/sub 8/Ga/sub 16/Ge/sub 30/ are reported. The samples were characterised using X-ray diffraction, differential thermal analysis, electrical resistivity, Seebeck coefficient and Hall coefficient measurements. The materials possess a moderate negative Seebeck coefficient and a low electrical resistivity which increase with increasing temperature. The potential for thermoelectric applications of these materials is assessed.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126737997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Modification of bismuth telluride for improving thermoelectric properties 改善热电性能的碲化铋改性
Z. Ding, Shu-Chuan Huang, D. Marcus, R. Kaner
{"title":"Modification of bismuth telluride for improving thermoelectric properties","authors":"Z. Ding, Shu-Chuan Huang, D. Marcus, R. Kaner","doi":"10.1109/ICT.1999.843487","DOIUrl":"https://doi.org/10.1109/ICT.1999.843487","url":null,"abstract":"A chemical method is used to intercalate lithium ions into the layered structure of bismuth telluride and its relatives. Exfoliation of the intercalated compounds in water results in colloidal suspensions of individual layers. These colloids can then be redeposited onto substrates yielding materials with some c-axis orientation, but no registry of ab planes. Annealing of the deposited materials at a low temperature (85/spl deg/C) for several days or at a higher temperature (300/spl deg/C) for several hours produces highly c-axis oriented materials. N-type doped bismuth tellurides are made by substituting selenium for tellurium in the bismuth telluride lattice. A complete range of solid solutions for Bi/sub 2/Te/sub 3-x/Se/sub x/ (x/spl les/3) has been synthesized from the elements and both the n and c lattice parameters vary linearly with the composition (x). P-type doped bismuth tellurides are made by substituting antimony for bismuth in the bismuth telluride lattice. A complete range of solid solutions for Bi/sub 2-x/Sb/sub 2/Te/sub 3/ (x/spl les/2) has been synthesized from the elements. While the a lattice parameter varies linearly with composition (x), the c parameter remains virtually unchanged as the c-axis size is mainly dependent on the close-packing of tellurium anions and not on the size of the interstitial bismuth or antimony ions.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123415946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermoelectric properties of epitaxial PbSrTe and PbSrSe bulk and MQW thin films 外延PbSrTe和PbSrSe块体薄膜和MQW薄膜的热电性能
H. Beyer, A. Lambrecht, J. Nurnus, H. Bottner, H. Griessmann, A. Heinrich, L. Schmitt, M. Blumers, F. Volklein
{"title":"Thermoelectric properties of epitaxial PbSrTe and PbSrSe bulk and MQW thin films","authors":"H. Beyer, A. Lambrecht, J. Nurnus, H. Bottner, H. Griessmann, A. Heinrich, L. Schmitt, M. Blumers, F. Volklein","doi":"10.1109/ICT.1999.843480","DOIUrl":"https://doi.org/10.1109/ICT.1999.843480","url":null,"abstract":"Experimental evidence for an enhancement of the thermoelectric figure of merit ZT in 2D PbTe/Pb/sub 1-x/Eu/sub x/Te multiple-quantum-well (MQW)-structures was recently reported by Harman et al. (1997). To verify these basic concepts MQW-structures based on the Sr-ternary lead chalcogenides Pb/sub 1-x/Sr/sub x/Se and Pb/sub 1-x/Sr/sub x/Te were investigated. PbSe/Pb/sub 1-x/Sr/sub x/Se MQW have been successfully used for lead salt laser diodes. We present properties of bulk Pb/sub 1-x/Sr/sub x/Se and Pb/sub 1-x/Sr/sub x/Te epitaxial films grown by MBE on freshly cleaved BaF/sub 2/(111). N-type films with carrier concentrations between 10/sup 18/ and 10/sup 20/ cm/sup -3/ can be easily obtained by doping with pure bismuth. XRD and AFM measurements show a high structural quality of these films. The surface roughness of PbSrTe is even less than that of PbTe. Temperature dependent measurements of electrical conductivity and thermopower are reported. The thermoelectrical data of bulk PbTe-films agree well with values given by Harman. For MQW-films XRD and AFM analysis indicate high structural perfection. Measurements of transport properties of PbTe/Pb/sub 1-x/Sr/sub x/Te- and PbSe/Pb/sub 1-x/Sr/sub x/Se-MQW structures were evaluated according to Harman and alternatively with stacked well and barrier layers connected in parallel. Both evaluation methods were performed on different types of MQW structures and doping profiles and yield an enhancement in the power factor for a well thickness less than 3 nm. Additionally first thermal conductivity data on IV-VI MQW structures are presented.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"65 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126248101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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