Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)最新文献

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High temperature thermoelectric properties of oxide Ca/sub 9/Co/sub 12/O/sub 28/ 氧化物Ca/sub 9/Co/sub 12/O/sub 28/的高温热电性能
S. Li, R. Funahashi, I. Matsubara, K. Ueno, S. Sodeoka, H. Yamada
{"title":"High temperature thermoelectric properties of oxide Ca/sub 9/Co/sub 12/O/sub 28/","authors":"S. Li, R. Funahashi, I. Matsubara, K. Ueno, S. Sodeoka, H. Yamada","doi":"10.1109/ICT.1999.843456","DOIUrl":"https://doi.org/10.1109/ICT.1999.843456","url":null,"abstract":"In recent years, more and more attention has been put on oxides as thermoelectric materials. In this work, we synthesized the oxide Ca/sub 9/Co/sub 12/O/sub 28/, analyzed its structure, and measured its electrical properties and Seebeck coefficient from room temperature to 700/spl deg/C. Both the electrical conductivity and the Seebeck coefficient increase with the increasing of temperatures. The electrical conductivity is 83.4 S/cm at 700/spl deg/C. The Seebeck coefficient is negative, and the value is 117.9 /spl mu/V/K at 700/spl deg/C. The calculated values of the power factor increase with increasing temperature, and reach 1.2/spl times/10/sup -4/ W/K/sup 2/.m at 700/spl deg/C. The thermal conductivity at room temperature is 1.93 W/m.K and decreases slightly with increasing temperature. At 700/spl deg/C, the figure of merit is 0.7/spl times/10/sup -4/ K/sup -1/. The substitution of Ca by Bi results in a great improvement of the thermoelectric performance with Z=2.0/spl times/10/sup -4/ K/sup -1/ at 700/spl deg/C.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116881105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Chemical route to nano-engineered skutterudites 用化学方法制造纳米工程的角闪石
M. Toprak, Yu Zhang, M. Muhammed, A. Zakhidov, R. Baughman, I. Khayrullin
{"title":"Chemical route to nano-engineered skutterudites","authors":"M. Toprak, Yu Zhang, M. Muhammed, A. Zakhidov, R. Baughman, I. Khayrullin","doi":"10.1109/ICT.1999.843410","DOIUrl":"https://doi.org/10.1109/ICT.1999.843410","url":null,"abstract":"Atomic scale material design provides opportunities for developing thermoelectric materials with significantly improved figures of merit (ZT). The use of small particle size may also increase ZT, because of possible increases in the ratio of electrical conductivity to thermal conductivity and the thermopower. A novel chemical route is described for fabricating multi-component thermoelectric metal alloys as fine nanostructured powders. The different constituents are simultaneously precipitated from aqueous solution-thereby providing a precursor having a precise desired composition and uniform molecular scale mixing. Thermal treatment of the precursor included calcination in air and reduction by hydrogen. Nanophase skutterudite of CoSb/sub 3/ in reasonably high phase purity was thereby produced after thermal treatments at a temperature of 350-550/spl deg/C for only 3-5 hrs. High purity Ni-doped skutterudites of Co/sub 1-x/Ni/sub x/Sb/sub 3/ up to x=0.25 were also produced using this route.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125002538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Effect of excess antimony on TE-properties of cobalt-antimony based skutterudite materials prepared by gas atomizing and sintering process 过量锑对气相雾化烧结钴锑基方钨矿材料te性能的影响
H. Uchida, A. Kasama, Y. Itsumi, K. Matsubara
{"title":"Effect of excess antimony on TE-properties of cobalt-antimony based skutterudite materials prepared by gas atomizing and sintering process","authors":"H. Uchida, A. Kasama, Y. Itsumi, K. Matsubara","doi":"10.1109/ICT.1999.843429","DOIUrl":"https://doi.org/10.1109/ICT.1999.843429","url":null,"abstract":"In order to construct the mass production process of thermoelectric materials that accomplish wide range supply for various industrial fields, in previous study, gas atomizing and sintering process was investigated for cobalt-antimony based Skutterudite materials. It was found that the combination process of gas atomizing and sintering process is useful for mass production of high quality thermoelectric materials. Because those process is simple without mixing or grinding process and any kind of materials can be made as far as they can be melted in a same crucible in a same time. The mean diameter of gas atomized powder is less than 100 m, and also the inner structure of them is fine including every necessary element. Accordingly gas atomized powder can be sintered in a short time by both methods of spark plasma sintering and hot press sintering. Thermoelectric properties of materials that were made in this process were compared with the same kind of material which was made in laboratory scale. Substituted type materials attained almost aimed value of ZT, however filled type material could not get the same ZT value which was made in laboratory scale. One of the main reasons of low ZT value of p-type was considered to be concerned with excess antimony owing to large-scale production. Another reason was considered to be oxide effect that was introduced in the process of gas atomizing. These factors seem to be also important for n-type materials to get higher properties.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123665259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First principles studies of novel thermoelectric materials 新型热电材料的第一性原理研究
D. J. Singh, M. Fornari, J. Feldman, I. Mazin
{"title":"First principles studies of novel thermoelectric materials","authors":"D. J. Singh, M. Fornari, J. Feldman, I. Mazin","doi":"10.1109/ICT.1999.843427","DOIUrl":"https://doi.org/10.1109/ICT.1999.843427","url":null,"abstract":"The use of first principles calculations based on density functional theory to determine electronic and vibrational properties of novel thermoelectric materials is illustrated by their application to La-filled skutterudites. Vibrational properties are briefly discussed in relation to the identification of phonons responsible for heat conduction and the effect of the filling ions on these. The electronic properties are surveyed for various combinations of pnictogen and transition metal atoms. A promising arsenide composition is identified for further study as a p-type high temperature material.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130100788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Getting rid of acoustic phonons in heat transport 消除热传输中的声子
S. Schujman, G. Slack
{"title":"Getting rid of acoustic phonons in heat transport","authors":"S. Schujman, G. Slack","doi":"10.1109/ICT.1999.843371","DOIUrl":"https://doi.org/10.1109/ICT.1999.843371","url":null,"abstract":"A simple model based on the behavior of a harmonic oscillator particle inside a clathrate cage that adjusts the vibration frequency of filler atoms as a function of the cage size for different type-I clathrate compounds prepared by different authors allows us to extract conclusions regarding charge transfer, relationships between \"rattler\" and containing cage and also, to predict, for a given network composition what atoms would be useful to scatter certain acoustic phonon frequencies.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130189880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermoelectric transport in semiconductors-emergence of nonequilibrium charge carriers 半导体中的热电输运——非平衡载流子的出现
G. Espejo, A. Meriuts, O. Titov, G. Logvinov, I. Volovichev, Y. Gurevich
{"title":"Thermoelectric transport in semiconductors-emergence of nonequilibrium charge carriers","authors":"G. Espejo, A. Meriuts, O. Titov, G. Logvinov, I. Volovichev, Y. Gurevich","doi":"10.1109/ICT.1999.843460","DOIUrl":"https://doi.org/10.1109/ICT.1999.843460","url":null,"abstract":"The new point of view of thermoelectric phenomena as a linear transport process of nonequilibrium charge carriers is presented. It is shown that Fermi quasilevels, which characterize transport in a system far from equilibrium can be nonmonotonic functions of the spatial coordinates. The role of recombination in affecting the thermoelectric phenomena is discussed for the first time. It is shown that in the presence of thermal fields there appear new terms in the expression for recombination which depend on the inhomogeneity of temperature. If electron and hole temperatures are different, which is a typical case in semiconductors, there appears one more new term in the expression for recombination which is proportional to the difference of electron and hole temperatures.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128807372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermoelectric MEMS coolers 热电MEMS冷却器
C. Hilbert, R. Nelson, J. Reed, B. Lunceford, A. Somadder, K. Hu, U. Ghoshal
{"title":"Thermoelectric MEMS coolers","authors":"C. Hilbert, R. Nelson, J. Reed, B. Lunceford, A. Somadder, K. Hu, U. Ghoshal","doi":"10.1109/ICT.1999.843347","DOIUrl":"https://doi.org/10.1109/ICT.1999.843347","url":null,"abstract":"To date the advantages of solid-state coolers such as high reliability, low-mechanical noise, and localized temperature control have often been negated by their inefficiency and the frequent need for multiple stages to achieve the desired temperature difference. While recent research on novel materials and low-dimensional structures raises the hope for improved performance, additional innovations are required to make solid-state cooling competitive. MCC is developing a novel implementation and operational paradigm for solid-state coolers based on transient operation of thermoelectric (TE) coolers and micro-electro-mechanical switch (MEMS) technology. Application of a short transient pulse on top of a steady state bias to a correctly designed TE cooler results in a temporary additional temperature drop. MEMS switches can exploit this effect by providing a thermal switch between the cold end of the TE cooler and the device to be cooled, only connecting them during repeated transient pulses. The objective of this work is to demonstrate the feasibility of the TE MEMS cooler concept by fabricating a prototype and achieving a cold temperature lower than the one achievable by steady-state operation of a thermoelectric cooler. In this paper we describe the general concept and report on the progress made to date.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128359768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
The effect of pulse width modulation (PWM) frequency on the reliability of thermoelectric modules 脉宽调制(PWM)频率对热电模块可靠性的影响
M.J. Nagy, S. Román
{"title":"The effect of pulse width modulation (PWM) frequency on the reliability of thermoelectric modules","authors":"M.J. Nagy, S. Román","doi":"10.1109/ICT.1999.843348","DOIUrl":"https://doi.org/10.1109/ICT.1999.843348","url":null,"abstract":"Pulse-width-modulation (PWM) control has many benefits when used to control power to thermoelectric modules (TEM's). This scheme allows the use of smaller, lighter circuitry that dissipates less heat than a comparable linear controller. However, abruptly turning power on and off to a TEM has been known to cause thermal cycling which reduces the reliability of the module. This thermal cycling fatigues the solder junctions causing an increase in the module's electrical resistance. As a result, some system designers have been reluctant to use PWM controllers in their cooling equipment. This paper quantifies the effect of PWM control on the reliability of TEM. TEM's are powered with PWM signals of various frequencies from 0.1 Hz to 10 kHz. The electrical resistance of these modules is then tracked throughout the duration of the test. These changes in electrical resistances are used to directly correlate the frequency of PWM control with TEM reliability.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122975405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermoelectric transport properties of porous silicon nanostructure 多孔硅纳米结构的热电输运性质
A. Yamamoto, H. Takazawa, T. Ohta
{"title":"Thermoelectric transport properties of porous silicon nanostructure","authors":"A. Yamamoto, H. Takazawa, T. Ohta","doi":"10.1109/ICT.1999.843422","DOIUrl":"https://doi.org/10.1109/ICT.1999.843422","url":null,"abstract":"We evaluated the in-plane thermoelectric transport properties of self-supporting porous silicon samples which were prepared through anodization of degenerate silicon wafer. Rapid decrease of both electrical and thermal conductivity were observed alter the anodization. The thermal conductivities decreased by two orders, while the electrical conductivities were three to five orders of magnitude lower than that of initial silicon at room temperature. Increase of Seebeck coefficient was observed for the 69% porous PS sample and the figure of merit was larger than that of initial silicon. It was found that the reduction in electrical conductivity is larger than that of thermal conductivity. Low conductivity of PS indicates localized carriers due to depletion of carrier and strong scattering taking place in residual silicon nanostructure.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126603012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Advances in 1D and 2D thermoelectric materials 一维和二维热电材料的研究进展
M. Dresselhaus, Y. Lin, G. Dresselhaus, X. Sun, Z. Zhang, S. Cronin, T. Koga, J. Ying
{"title":"Advances in 1D and 2D thermoelectric materials","authors":"M. Dresselhaus, Y. Lin, G. Dresselhaus, X. Sun, Z. Zhang, S. Cronin, T. Koga, J. Ying","doi":"10.1109/ICT.1999.843342","DOIUrl":"https://doi.org/10.1109/ICT.1999.843342","url":null,"abstract":"Recent advances in our understanding of 1D and 2D thermoelectric materials in the form of quantum wires (1D) and quantum wells (2D) are reviewed, with emphasis given to the physical mechanisms responsible for the enhanced thermoelectric figure of merit (ZT) in these low dimensional systems. Starting with 2D superlattices, progress in demonstrating proof-of-principle in the PbTe/Pb/sub 1-x/Eu/sub x/Te and Si/Si/sub 1-x/Ge/sub x/ systems is presented. The concept of carrier pocket engineering regarding improved thermoelectric performance for the whole superlattice Z/sub 3D/T, including both the quantum well and the barrier region, is reviewed. Particular attention is given to recent results obtained for 1D bismuth nanowire arrays and for individual Bi nanowires.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128142973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
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