Thermoelectric transport in semiconductors-emergence of nonequilibrium charge carriers

G. Espejo, A. Meriuts, O. Titov, G. Logvinov, I. Volovichev, Y. Gurevich
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Abstract

The new point of view of thermoelectric phenomena as a linear transport process of nonequilibrium charge carriers is presented. It is shown that Fermi quasilevels, which characterize transport in a system far from equilibrium can be nonmonotonic functions of the spatial coordinates. The role of recombination in affecting the thermoelectric phenomena is discussed for the first time. It is shown that in the presence of thermal fields there appear new terms in the expression for recombination which depend on the inhomogeneity of temperature. If electron and hole temperatures are different, which is a typical case in semiconductors, there appears one more new term in the expression for recombination which is proportional to the difference of electron and hole temperatures.
半导体中的热电输运——非平衡载流子的出现
提出了热电现象作为非平衡载流子线性输运过程的新观点。证明了表征非平衡系统输运的费米准能级可以是空间坐标的非单调函数。本文首次讨论了复合对热电现象的影响。结果表明,在存在热场的情况下,复合表达式中出现了依赖于温度非均匀性的新项。如果电子和空穴温度不同,这是半导体中的典型情况,则在复合表达式中会出现一个与电子和空穴温度之差成正比的新术语。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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