一维和二维热电材料的研究进展

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI:10.1109/ICT.1999.843342

M. Dresselhaus, Y. Lin, G. Dresselhaus, X. Sun, Z. Zhang, S. Cronin, T. Koga, J. Ying

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引用次数: 16

摘要

回顾了我们对量子线(1D)和量子阱(2D)形式的一维和二维热电材料的理解的最新进展，重点介绍了在这些低维系统中增强热电优值(ZT)的物理机制。从二维超晶格开始，介绍了PbTe/Pb/sub - 1-x/Eu/sub -x/ Te和Si/Si/sub - 1-x/Ge/sub -x/体系的原理证明进展。综述了载流子口袋工程在改善Z/sub 3D/T整个超晶格(包括量子阱和势垒区)热电性能方面的概念。特别关注一维铋纳米线阵列和单个铋纳米线的最新结果。

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Advances in 1D and 2D thermoelectric materials

Recent advances in our understanding of 1D and 2D thermoelectric materials in the form of quantum wires (1D) and quantum wells (2D) are reviewed, with emphasis given to the physical mechanisms responsible for the enhanced thermoelectric figure of merit (ZT) in these low dimensional systems. Starting with 2D superlattices, progress in demonstrating proof-of-principle in the PbTe/Pb/sub 1-x/Eu/sub x/Te and Si/Si/sub 1-x/Ge/sub x/ systems is presented. The concept of carrier pocket engineering regarding improved thermoelectric performance for the whole superlattice Z/sub 3D/T, including both the quantum well and the barrier region, is reviewed. Particular attention is given to recent results obtained for 1D bismuth nanowire arrays and for individual Bi nanowires.

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Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)

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