Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)最新文献_第6页

Synthesis of filled skutterudite compounds with varied degree of filling 不同填充度的填型方角石化合物的合成

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843402

H. Sellinschegg, A. Smalley, G. Yoon, D.C. Johnson, G. Nolas, M. Kaeser, T. Tritt

引用次数: 1

Integrated thermoelectric cooling modules and blocks 集成热电冷却模块和模块

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843377

A. Demidov, A. Holopkin, V. Penkin

{"title":"Integrated thermoelectric cooling modules and blocks","authors":"A. Demidov, A. Holopkin, V. Penkin","doi":"10.1109/ICT.1999.843377","DOIUrl":"https://doi.org/10.1109/ICT.1999.843377","url":null,"abstract":"A new design of integrated thermoelectric cooling modules (ITCMs) was developed. The ITCM consists of a standard thermoelectric cooling module and two metal radiators in form of needles, fins, and so on soldered to outer metallized sides of ceramic plates of standard modules. The operation of the soldering of radiators can be combined with the operation of the assembling of modules. In result the ITCM manufacturing cost can be drastically reduced. Elimination of thermal conductive grease that is used in traditional devices considerably increases the ITCM efficiency. The ITCMs were used in thermoelectric (TE) blocks with heat exchangers of both air-air and air-water types. Especially high efficiency was reached in air-water cooling TE blocks. The radiators of the one ITCM side were inserted into the holes of the water heat exchanger and sealed there by an elastic epoxy compound. The radiators had direct contact with water. The radiators of the opposite ITCM side were inserted into the air duct of TE bloc. Proposed design of TE blocks has the following advantages: no special demands to geometrical characteristics and tolerances, high cooling capacity and low manufacturing cost. The typical TE bloc with heat exchangers of air-water type had the following characteristics: number of ITCMs-36, consumed electric power-1500 W, air temperature decrease-up to 30/spl deg/C for air flow of 150 m/sup 3//h.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121986982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental confirmation of milliwatt power source concept 毫瓦电源概念的实验验证

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843440

A. Pustovalov, V. Gusev, A. Borshchevsky, A. Chmielewski

引用次数: 9

Thermoelectric properties of bismuth-silica nanocomposites 铋-二氧化硅纳米复合材料的热电性能

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843412

F. Brochin, B. Lenoir, X. Devaux, H. Scherrer

引用次数: 3

PbTe-based quantum-dot thermoelectric materials with high ZT 基于pbte的高ZT量子点热电材料

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843386

T. Harman, P. Taylor, D. Spears, M. P. Walsh

引用次数: 9

Phonon drag and inelastic electron scattering by acoustic phonons in semiconductor superlattice 半导体超晶格中声子的声子拖拽和非弹性电子散射

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843372

Y. Ivanov, M. Vedernikov

引用次数: 0

Analysis on thermo-mechanical stress of thermoelectric module 热电模块热-机械应力分析

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843396

Y. Hori, D. Kusano, T. Ito, K. Izumi

引用次数: 18

Bandgap features and thermoelectric properties of Ti-based half-Heusler alloys ti基半heusler合金的带隙特征及热电性能

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843331

S. J. Poon, T. Tritt, Y. Xi, S. Bhattacharya, V. Ponnambalam, A. Pope, R. Littleton, V. M. Browning

引用次数: 5

High temperature electrical transport in Al-Pd-Mn quasicrystals Al-Pd-Mn准晶体中的高温电输运

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843419

A. Pope, R. Littleton, J. Jeffries, T. Tritt, M. Feuerbacher, R. Gagnon, S. Legault, J. Strom-Olsen

引用次数: 0

Layered (IV-VI)-(V-VI)-materials for low dimensional thermoelectric structures 低维热电结构用层状(IV-VI)-(V-VI)材料

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843483

J. Nurnus, H. Bottner, H. Beyer, A. Lambrecht

{"title":"Layered (IV-VI)-(V-VI)-materials for low dimensional thermoelectric structures","authors":"J. Nurnus, H. Bottner, H. Beyer, A. Lambrecht","doi":"10.1109/ICT.1999.843483","DOIUrl":"https://doi.org/10.1109/ICT.1999.843483","url":null,"abstract":"(IV-VI)-(V-VI) nanostructures are new systems, which could be used both for the reduction of thermal conductivity and for MQW structures to enhance electrical conductivity. We report on both first steps: IV-VI on V-VI and V-VI on IV-VI growth in the bismuth telluride/lead telluride material system using molecular beam epitaxy. Bismuth telluride layers were grown using element sources, PbTe and PbSe can be grown using the binary compounds. n-PbTe and n-PbSe as well as n-bismuth telluride layers were grown epitaxially on [111]-barium fluoride-substrates. [111]-barium fluoride is probably the best suited substrate for both IV-VI and V-VI-materials due to its small lattice mismatch. The IV-VI-initial-layers were overgrown with n-bismuth telluride, while the V-VI-initial-layers were overgrown with PbTe or PbSe. We report on growth characteristics analysed by AFM, ECP, SEM and SIMS, depending on various growth conditions like substrate temperature and layer thickness. The results taken from as grown samples and after annealing procedures are discussed with respect to the crystal structures accordingly and the ternary phase diagram of bismuth telluride/lead telluride.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116036609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5