Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)最新文献_第7页

Influence of films and substrates thermal expansion discrepancy on bismuth film thermoelectric properties 薄膜与衬底热膨胀差异对铋薄膜热电性能的影响

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843425

V.A. Komvarov, V. Grabov, O. Uryupin

{"title":"Influence of films and substrates thermal expansion discrepancy on bismuth film thermoelectric properties","authors":"V.A. Komvarov, V. Grabov, O. Uryupin","doi":"10.1109/ICT.1999.843425","DOIUrl":"https://doi.org/10.1109/ICT.1999.843425","url":null,"abstract":"The results of bismuth films on various substrates thermoelectric properties research are brought. A film are received by evaporation in vacuum. A film had thickness from 0.05 micron up to 1.5 micron. It is found out large influence of temperature expansion bismuth and substrate materials distinction on bismuth films thermoelectric properties. The substrate deforms a bismuth films at temperature reduction. This planar tension or compressing deformation is similar of axial compressing or tension deformation in plane perpendicular direction (along an axis C/sub 3/). Change of charge carriers concentration on mechanical deformations included in film-substrate system is designed. Change of charge carriers concentration in bismuth films on various substrates is calculated. These results well coincide with received from experiment. The bismuth films Seebeck coefficient peculiarities governed by competition film size effect, borders crystallite relaxation effect and included thermal expansion coefficients film and substrate discrepancy film deformation. The included of films and substrates thermal expansion discrepancy bismuth films mechanical deformation changes partial path transport coefficient values and its ratio and in consequence of changes Seebeck coefficient values and temperature dependence form.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114166501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Quick method for determining the reliability of a thermoelectric module via pulse testing 通过脉冲测试快速确定热电模块可靠性的方法

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843423

T. Ritzer

{"title":"Quick method for determining the reliability of a thermoelectric module via pulse testing","authors":"T. Ritzer","doi":"10.1109/ICT.1999.843423","DOIUrl":"https://doi.org/10.1109/ICT.1999.843423","url":null,"abstract":"Users and manufacturers of thermoelectric modules (TEMs) are experiencing increasing demand for reliable products. As the volumes of manufactured TEMs increase, the need for a faster method of reliability testing is essential to minimize costs while ensuring the overall quality of the product. The typical methods of reliability testing can take as many as 3-4 months to determine the projected operational life of a TEM. In many cases, there is not enough time or resources to qualify the growing manufactured quantities of TEMs, until now. TE Technology has developed a pulse test method to quickly determine the integrity of the most crucial components within the TEM. This test process consists of applying a high magnitude, but very short duration, AC pulse through a TEM. This energy burst preferentially generates heat, pin-pointed wherever high contact resistance may be present throughout the TEM. These \"Hot Spots\" can be observed through thermal imaging methods applied to the exterior ceramics. Thus, every junction in the TEM is tested. Analyses of these thermal images are used to identify potential future failures. Test data will be presented to correlate the results of the pulse tests with those obtained from longer term, conventional reliability testing.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"450 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125804311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Thermoelectric characteristics of PbS/EuS superlattices PbS/EuS超晶格的热电特性

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843367

A. Sipatov, V. Volobuev, A. Fedorov, E. Rogacheva, I. Krivulkin

引用次数: 0

Thermoelectric properties of the compounds Tl/sub 9/-X-Q/sub 6/ (X=antimony, bismuth; Q=selenium, tellurium) 化合物Tl/sub 9/-X-Q/sub 6/ (X=锑、铋)的热电性质Q =硒、碲)

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843448

B. Wolfing, C. Kloc, A. Ramirez, E. Bucher

引用次数: 2

PbBi/sub 2/Te/sub 4/ and PbBi/sub 4/Te/sub 7/, thermoelectric materials in the system of Pb-Bi-Te PbBi/sub 2/Te/sub 4/和PbBi/sub 4/Te/sub 7/， Pb-Bi-Te体系中的热电材料

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843449

Y. Oosawa, Y. Tateno, M. Mukaida, T. Tsunoda, Y. Imai, Y. Isoda, I. Nishida

引用次数: 0

New proposal of high temperature thermoelectric conversion in power plant 电厂高温热电转换新方案

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843340

S. Yamaguchil, N. Kondoh, I. Yonenaga, Y. Hasegawa, T. Eura

{"title":"New proposal of high temperature thermoelectric conversion in power plant","authors":"S. Yamaguchil, N. Kondoh, I. Yonenaga, Y. Hasegawa, T. Eura","doi":"10.1109/ICT.1999.843340","DOIUrl":"https://doi.org/10.1109/ICT.1999.843340","url":null,"abstract":"Efficiency of thermoelectric conversion is not high, and therefore this is not used in an usual conventional energy system in spite of the advantages. Even if the product of figure of merit and temperature is improved up to 2.0 and the heat cycle temperature difference is 1000 K, the total efficiency of the conversion is around 23%. This result requests us to find a different way to use this technique in the conventional conversion system. Here, we propose a new system of thermoelectric conversion, which is applied to a steam power plant, in order to improve the total efficiency of the system. This is called the topping system. Since temperature difference between the flame and the pressured steam is large, the loss of exergy is large in the boiler and the thermoelectric conversion is available in this heat cycle. This structure does not lose the energy because the low temperature side of the element is that of the steam. If we insert the element between the inner wall and steam tube of the boiler, the resistance of the heat circuit is increased, but this is not a serious problem if GeSi semiconductor is used. A scale of the thermoelectric generation is 10000 times higher than that of the present generator, and therefore the mass production research is needed. Rough cost estimation has been done and the cost of the thermoelectric conversion is 2.1 US$/Watt, and this is almost one-third of the present price of the element based on bismuth telluride.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124765093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Thermoelectric properties on antimonide skutterudites and filled skutterudites 锑化和填充方晶石的热电性质

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843426

K. Akai, K. Oshiro, M. Matsuura

{"title":"Thermoelectric properties on antimonide skutterudites and filled skutterudites","authors":"K. Akai, K. Oshiro, M. Matsuura","doi":"10.1109/ICT.1999.843426","DOIUrl":"https://doi.org/10.1109/ICT.1999.843426","url":null,"abstract":"We study thermoelectric properties on IrSb/sub 3/ and the electronic structure of YbFe/sub 4/Sb/sub 12/. The band structure of IrSb/sub 3/ is calculated by the full-potential linearized augmented plane wave (FLAPW) method with and without the consideration of the spin-orbit(SO) interaction. The calculated valence and conduction band structures near the band gap are fitted well by a simple band model, i.e., the Kane's nonparabolic bands and the parabolic bands. Using the simple band model, thermoelectric properties are calculated easily. In the calculation the relaxation time is dealt with the two types of the approximation, i.e. a constant relaxation time and a relaxation time which is inversely proportional to the electronic density of states (DOS). The results indicate that the detailed consideration of the scattering mechanism is necessary. In YbFe/sub 4/Sb/sub 12/ the DOS is obtained by the ab initio band calculation. The DOS at the Fermi energy is in good agreement of the experimental value, and thus the correlation effect of electron-electron interaction due to the localized f-orbital seems to be weak in the system.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131417058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

The electronic structure and transport properties of clathrates: a density functional study 包合物的电子结构和输运性质:密度泛函研究

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843437

N. Blake, L. Møllnitz, G. Stucky, H. Metiu

{"title":"The electronic structure and transport properties of clathrates: a density functional study","authors":"N. Blake, L. Møllnitz, G. Stucky, H. Metiu","doi":"10.1109/ICT.1999.843437","DOIUrl":"https://doi.org/10.1109/ICT.1999.843437","url":null,"abstract":"We have used density functional theory to study the electronic properties of the clathrates Sr/sub 8/Ga/sub 16/Ge/sub 30/, Ba/sub 8/Ga/sub 16/Ge/sub 30/, and Ba/sub 8/Ga/sub 16/Si/sub 30/. We found that these compounds have a number of unexpected properties. The atoms inside the large cages (Sr or Ba) undergo large amplitude motion, especially in the direction parallel to the six-atom windows; the Sr atom in Sr/sub 8/Ga/sub 16/Ge/sub 30/ is practically neutral while the Ba atom in Ba/sub 8/Ga/sub 16/Ge/sub 30/ donates practically two electrons to the frame; Sr/sub 8/Ga/sub 16/Ge/sub 30/ is a metal while Ba/sub 8/Ga/sub 16/Ge/sub 30/ and Ba/sub 8/Ga/sub 16/Si/sub 30/ are semiconductors. The Sr bands in Sr/sub 8/Ga/sub 16/Ge/sub 30/ are located near the Fermi level, are very flat, and do not contribute to the Seebeck coefficient or the conductivity (there is thus no conductivity through the one-dimensional Sr wires in the structure); most electron transport takes place through one band whose electrons are located on the frame. We also find that the transport properties are sensitive to chemical modifications: deliberate errors in stoichiometry, doping with charge donors or acceptors, and changes in location of the group-III elements in the lattice can cause changes of a factor of two or more in the Seebeck coefficient. Finally, total energy calculations show that the clathrates have lower energy than the elemental solids (Sr, Ba, and Ge). This implies that the clathrates are not thermodynamically metastable and therefore one does not have to fight thermodynamics during synthesis; given a chance by kinetics the elements will prefer to form a clathrate. This suggests that clathrates can be formed by crystallization from a melt containing the elements in the appropriate stoichiometry.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122274889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Growth and thermoelectric properties of artificially layered (BiSb)/sub 2/Te/sub 3/ 人工层状(BiSb)/sub 2/Te/sub 3/的生长和热电性能

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843373

Sunglae Cho, Yunki Kim, A. DiVenere, G. Wong, J. Ketterson, J. R. Meyer

引用次数: 0

Thermoelectric properties of oxide device: (Na/sub 0.95/Ag/sub 0.05/)/sub x/CoO/sub 2$/ -/sub /spl delta///(Nd/sub 0.99/Zr/sub 0.01/)/sub 2/CuO/sub 4-/spl delta// 氧化物器件热电性能:(Na/sub 0.95/Ag/sub 0.05/)/sub x/CoO/sub 2$/ -/sub /spl delta///(Nd/sub 0.99/Zr/sub 0.01/)/sub 2/CuO/sub 4-/spl delta//

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843435

K. Fujita, K. Nakamura, S. Yamashita

{"title":"Thermoelectric properties of oxide device: (Na/sub 0.95/Ag/sub 0.05/)/sub x/CoO/sub 2$/ -/sub /spl delta///(Nd/sub 0.99/Zr/sub 0.01/)/sub 2/CuO/sub 4-/spl delta//","authors":"K. Fujita, K. Nakamura, S. Yamashita","doi":"10.1109/ICT.1999.843435","DOIUrl":"https://doi.org/10.1109/ICT.1999.843435","url":null,"abstract":"The thermoelectric properties of polycrystalline (Na/sub 1-y/Ag/sub y/)/sub x/CoO/sub 2-/spl delta// and (Nd/sub 1-x/Zr/sub x/)/sub 2/CuO/sub 4-/spl delta// by the conventional solid state reaction method were examined. The electrical resistivity of (Na/sub 1-y/Ag/sub y/)/sub x/CoO/sub 2-/spl delta// shows a metallic temperature dependency, and a p-type conduction is expected according to thermoelectric power measurements. Minimum resistivity, maximum thermoelectric power, minimum thermal conductivity at room temperature, and the maximum figure of merit at 550 K of (N/sub 0.95/Ag/sub 0.05/)/sub x/CoO/sub 2-/spl delta// were 2.1 m/spl Omega//spl middot/cm, 100 /spl mu/VK/sup -1/, 1.6 Wm/sup -1/K/sup -1/, 0.16/spl times/10/sup -3/ K/sup -1/, respectively. On the other hand, (Nd/sub 1-x/Zr/sub x/)/sub 2/CuO/sub 4-/spl delta// shows an n-type behavior. Resistivity, thermoelectric power, thermal conductivity, and the maximum figure of merit at 300 K of (Nd/sub 0.99/Zr/sub 0.01/)/sub 2/CuO/sub 4-/spl delta// were 46 m/spl Omega//spl middot/cm, -300 /spl mu/VK/sup -1/, 6 Wm/sup -1/K/sup -1/, 4.2/spl times/10/sup -5/ K/sup -1/, respectively. A complete thermoelectric device using the p-type and n-type materials was successfully fabricated for the first time, and the performance of the device was evaluated. A maximum output power of the device was 19 /spl mu/W at /spl Delta/T=200 K. The very low output, which is only 1% of the theoretical value, is due to a poor electrical contact to the n-type material.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131167823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1