Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)最新文献_第8页

Thermoelectric properties of bismuth-tellurium based compounds prepared by particulate processing 微粒法制备铋碲基化合物的热电性能

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843486

H. Tashiro, M. Yonetsu, S. Matsuo, K. Takagi

{"title":"Thermoelectric properties of bismuth-tellurium based compounds prepared by particulate processing","authors":"H. Tashiro, M. Yonetsu, S. Matsuo, K. Takagi","doi":"10.1109/ICT.1999.843486","DOIUrl":"https://doi.org/10.1109/ICT.1999.843486","url":null,"abstract":"The influence of grain size and oxygen content on thermoelectric properties of sintered bismuth-tellurium based compounds has been investigated. Milling time and sintering atmosphere are the processing parameters that change grain size and oxygen content. Bismuth, tellurium, antimony and selenium powders were mixed to the composition of (Bi/sub 2/Te/sub 3/)/sub 0.2/(Sb/sub 2/Te/sub 3/)/sub 0.8/ for p-type and that of (Bi/sub 2/Te/sub 3/)/sub 0.975/(Bi/sub 2/Se/sub 3/)/sub 0.025/ -0.05 mass% SbI/sub 3/ for n-type, respectively. The powder mixtures were ball milled in acetone and consolidated by hot pressing at 460/spl deg/C for p-type and 500/spl deg/C for n-type in an argon or hydrogen atmosphere. The sintered samples exhibited a fine polycrystalline structure and the grain size was 0.1-10 /spl mu/m. The Seebeck coefficient, the resistivity and the thermal conductivity were measured at room temperature. The oxygen contents of the ball-milled powders and sintered samples were measured by the infrared absorption method. Sintering in a reducing atmosphere provided a lower oxygen content, yielding higher Z values. The obtained maximum Z values were 2.6/spl times/10/sup -3//K for the p-type and 2.5/spl times/10/sup -3//K for the n-type compound, respectively.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133368693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Performance assessment of thermoelectric coolers for use in high temperature electronics applications 高温电子设备用热电冷却器的性能评估

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843328

K. Moores, Y. Joshi, G. Miller

{"title":"Performance assessment of thermoelectric coolers for use in high temperature electronics applications","authors":"K. Moores, Y. Joshi, G. Miller","doi":"10.1109/ICT.1999.843328","DOIUrl":"https://doi.org/10.1109/ICT.1999.843328","url":null,"abstract":"Thermoelectric cooling (TEC) modules which are rated for operation up to 200/spl deg/C are now widely available commercially, making them potential candidates for use in the thermal management of high temperature electronics applications. Through the use of these TECs, traditional electronic devices could be employed at much higher temperatures than they might otherwise tolerate, by creating a low temperature \"micro-environment\" around the specific components of interest, To gauge the feasibility of using TECs for high temperature thermal management, a single stage TEC was operated at constant current, near its maximum temperature limit for up to 1500 hours to assess the long term effect of elevated temperature on the module's performance. Results of the test showed a gradual decline in the overall temperature differential generated by the TEC during powered operation. Analysis of the exposed module by E-SEM suggests diffusion of Te from the thermoelements into the Bi solder region and a degradation of the Ni diffusion barrier between the copper tabs and the bismuth solder layer.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132035863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Thermoelectric materials "A semiclassical approach to dimensionality effects" 热电材料:一维效应的半经典方法

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843406

R.U. Gubser

引用次数: 0

Carrier pocket engineering to design superior thermoelectric materials using superlattice structures 载体口袋工程:利用超晶格结构设计优质热电材料

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843409

T. Koga, X. Sun, S. Cronin, M. Dresselhaus

引用次数: 4

Thermoelectric properties and crystal chemistry of promising oxide candidate Na/sub x/CoO/sub 2/ 有前途的候选氧化物Na/sub x/CoO/sub 2/的热电性质和晶体化学

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843453

M. Ohtaki

引用次数: 1

Transport properties of CoSb/sub 3/ doped with magnetic impurities Fe and Ni 磁性杂质Fe和Ni掺杂CoSb/sub - 3/的输运性质

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843360

H. Anno, H. Tashiro, K. Matsubara

{"title":"Transport properties of CoSb/sub 3/ doped with magnetic impurities Fe and Ni","authors":"H. Anno, H. Tashiro, K. Matsubara","doi":"10.1109/ICT.1999.843360","DOIUrl":"https://doi.org/10.1109/ICT.1999.843360","url":null,"abstract":"Effects of doping with magnetic impurities (Fe and Ni) on the thermal conductivity of CoSb/sub 3/ have been investigated to make clear the origin of the scattering of phonons by magnetic ions. Samples with different impurity concentration x=3, 5, and 10 at.% were prepared by hot pressing. The effects of doping on the electronic transport properties are explained in terms of a Kane model, in agreement with a result of the band calculation. Our analysis of the magnetic susceptibility on the basis of the crystal field theory suggests that the magnetic ions in CoSb, have trivalent paramagnetic states (mainly Fe/sup 3+/ S=5/2 and Ni/sup 3+/ S=1/2). The lattice thermal conductivity /spl kappa/L decreases to about 0.04 Wcm/sup -1/ K/sup -1/ with increasing x. The consideration of the electronic states of Fe and Ni in CoSb, and the theoretical calculations of /spl kappa/L based on the Debye model lead to a conclusion that the magnetic Fe and Ni ions probably ad as strong scattering centers of phonons (a model proposed by Slack and Galginaitis) and play an important role in reducing the lattice thermal conductivity of not only CoSb/sub 3/ but also filled skutterudites.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130110933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Thermoelectric investigation of bismuth nanowires 铋纳米线的热电性研究

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843450

S. Cronin, Y. Lin, T. Koga, X. Sun, J. Ying, M. Dresselhaus

引用次数: 11

High temperature thermoelectric properties of doped iridium silicide thin films 掺杂硅化铱薄膜的高温热电性能

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843345

W. Pitschke, A. Heinrich, J. Schumann, H. Griessmann, R. Kurt, A. Burkov

{"title":"High temperature thermoelectric properties of doped iridium silicide thin films","authors":"W. Pitschke, A. Heinrich, J. Schumann, H. Griessmann, R. Kurt, A. Burkov","doi":"10.1109/ICT.1999.843345","DOIUrl":"https://doi.org/10.1109/ICT.1999.843345","url":null,"abstract":"Iridium silicide thin films were prepared as undoped, Fe-doped and Ni-doped material by means of magnetron sputtering and electron beam evaporation. In the as-deposited state the structure of the films was amorphous. Subsequent annealing of binary and of iron-doped films results in crystallization and phase formation passing a metastable state. By contrast the crystallization process of Ni-containing films was characterized by the formation of residual nickel disilicide (/spl delta/-Ni/sub 2/Si) and nickel trisilicide (/spl beta//sub 1/-Ni/sub 3/Si) The electrical resistivity and the thermopower of the films were measured simultaneously during first annealing process at temperatures from 300 K up to 1200 K showing sensitive dependence on the chemical composition of the films and correlations with the phase formation process. In the final state the iron doped films show rather large thermoelectric power factors with maximum values at temperatures >1200 K as a result of the large gap of Ir/sub 3/Si/sub 5/ (1.56 eV). Estimation of thermoelectric efficiency using thermal conductivity of Ir/sub 3/Si/sub 5/ single crystals results in high values of figure of merit at temperatures >1000 K comparable with the best one observed for /spl beta/-FeSi/sub 2/ and MnSi/sub 1.75/. Ni-doped films with a small concentration of nickel silicides showed n-type conduction.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134272688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Physics of the gap formation in half-Heusler compounds and bismuth chalcogenide systems 半赫斯勒化合物和硫族铋体系中间隙形成的物理学

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843332

S. Mahanti, P. Larson, M. Kanatzidis

引用次数: 0

Spot cooling using thermoelectric microcoolers 现场冷却使用热电微冷却器

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843382

D. Yao, C. Kim, Gang Chen, J. Fleurial, H. Lyon

引用次数: 11