人工层状(BiSb)/sub 2/Te/sub 3/的生长和热电性能

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI:10.1109/ICT.1999.843373

Sunglae Cho, Yunki Kim, A. DiVenere, G. Wong, J. Ketterson, J. R. Meyer

{"title":"人工层状(BiSb)/sub 2/Te/sub 3/的生长和热电性能","authors":"Sunglae Cho, Yunki Kim, A. DiVenere, G. Wong, J. Ketterson, J. R. Meyer","doi":"10.1109/ICT.1999.843373","DOIUrl":null,"url":null,"abstract":"We report that the layered structure of Bi/sub 2/Te/sub 3/-based materials can be prepared with layer-by-layer growth using MBE; i.e., we sequentially deposit Te and Bi monolayers according to the sequence of Bi/sub 2/Te/sub 3/. The sequence of the layered structure is Te-Bi-Te-Bi-Te and three such sequences make a unit cell with a total of 6 Bi layers and 9 Te layers. In bulk and thin film (BiSb)/sub 2/Te/sub 3/ prepared by co-deposition, Bi and Sb occupy lattice sites randomly. In order to engineer the electronic band structure to achieve better thermoelectric properties and/or reduce the lattice thermal conductivity by increasing phonon scattering at interfaces, we have prepared artificially ordered (BiSb)/sub 2/Te/sub 3/. We will discuss the growth and thermoelectric properties of artificially layered (BiSb)/sub 2/Te/sub 3/ thin films and compare their properties with conventional structures.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth and thermoelectric properties of artificially layered (BiSb)/sub 2/Te/sub 3/\",\"authors\":\"Sunglae Cho, Yunki Kim, A. DiVenere, G. Wong, J. Ketterson, J. R. Meyer\",\"doi\":\"10.1109/ICT.1999.843373\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report that the layered structure of Bi/sub 2/Te/sub 3/-based materials can be prepared with layer-by-layer growth using MBE; i.e., we sequentially deposit Te and Bi monolayers according to the sequence of Bi/sub 2/Te/sub 3/. The sequence of the layered structure is Te-Bi-Te-Bi-Te and three such sequences make a unit cell with a total of 6 Bi layers and 9 Te layers. In bulk and thin film (BiSb)/sub 2/Te/sub 3/ prepared by co-deposition, Bi and Sb occupy lattice sites randomly. In order to engineer the electronic band structure to achieve better thermoelectric properties and/or reduce the lattice thermal conductivity by increasing phonon scattering at interfaces, we have prepared artificially ordered (BiSb)/sub 2/Te/sub 3/. We will discuss the growth and thermoelectric properties of artificially layered (BiSb)/sub 2/Te/sub 3/ thin films and compare their properties with conventional structures.\",\"PeriodicalId\":253439,\"journal\":{\"name\":\"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.1999.843373\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.1999.843373","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报道了利用MBE可以逐层生长制备Bi/sub 2/Te/sub 3基材料的层状结构;即按Bi/sub 2/Te/sub 3/的顺序依次沉积Te单层和Bi单层。层状结构的序列为Te-Bi-Te-Bi-Te，三个这样的序列组成一个单元胞，共6个Bi层和9个Te层。在共沉积制备的体和薄膜(BiSb)/sub 2/Te/sub 3/中，Bi和Sb随机占据晶格位。为了设计电子能带结构以获得更好的热电性能和/或通过增加界面声子散射来降低晶格热导率，我们制备了人工有序(BiSb)/sub 2/Te/sub 3/。我们将讨论人工层状(BiSb)/sub 2/Te/sub 3/薄膜的生长和热电性能，并将其与传统结构的性能进行比较。

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Growth and thermoelectric properties of artificially layered (BiSb)/sub 2/Te/sub 3/

We report that the layered structure of Bi/sub 2/Te/sub 3/-based materials can be prepared with layer-by-layer growth using MBE; i.e., we sequentially deposit Te and Bi monolayers according to the sequence of Bi/sub 2/Te/sub 3/. The sequence of the layered structure is Te-Bi-Te-Bi-Te and three such sequences make a unit cell with a total of 6 Bi layers and 9 Te layers. In bulk and thin film (BiSb)/sub 2/Te/sub 3/ prepared by co-deposition, Bi and Sb occupy lattice sites randomly. In order to engineer the electronic band structure to achieve better thermoelectric properties and/or reduce the lattice thermal conductivity by increasing phonon scattering at interfaces, we have prepared artificially ordered (BiSb)/sub 2/Te/sub 3/. We will discuss the growth and thermoelectric properties of artificially layered (BiSb)/sub 2/Te/sub 3/ thin films and compare their properties with conventional structures.

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Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)

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