Phonon drag and inelastic electron scattering by acoustic phonons in semiconductor superlattice

Y. Ivanov, M. Vedernikov
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Abstract

The electron relaxation time due to acoustical phonon scattering, the electrical conductivity, and the phonon-drag thermopower of semiconductor superlattices with quasi-two-dimensional quantum wells and quasi-one-dimensional quantum wires are calculated. The inelasticity of the scattering of charge carriers is taken into account. It is shown that the phonon-drag thermopower of a superlattice can be three orders of magnitude greater than the corresponding thermopower of a bulk semiconductor.
半导体超晶格中声子的声子拖拽和非弹性电子散射
计算了具有准二维量子阱和准一维量子线的半导体超晶格的声声子散射引起的电子弛豫时间、电导率和声子拖热功率。考虑了载流子散射的非弹性。结果表明,超晶格的声子拖热功率可以比体半导体的相应热功率大3个数量级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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