发布求助
文献互助 智能选刊 最新文献

IVESC 2012最新文献

筛选
英文 中文
Investigations of secondary electron emission from boron doped diamond films grown by MPCVD MPCVD生长硼掺杂金刚石膜的二次电子发射研究
IVESC 2012 Pub Date : 2012-04-24 DOI: 10.1109/IVESC.2012.6264187
M. Ding, Lili Li, Jinjun Feng, Yujuan Gao, Qilue Chen, Wensheng Shao
{"title":"Investigations of secondary electron emission from boron doped diamond films grown by MPCVD","authors":"M. Ding, Lili Li, Jinjun Feng, Yujuan Gao, Qilue Chen, Wensheng Shao","doi":"10.1109/IVESC.2012.6264187","DOIUrl":"https://doi.org/10.1109/IVESC.2012.6264187","url":null,"abstract":"A high secondary yield of 18.3 at 1KeV primary beam energy was found, with the B-doped diamond sample left in air for weeks and subject to no treatment prior to the measurement. Oxidation treatment destroys negative electron affinity (NEA) whereas heating in vacuum substantially regains NEA.","PeriodicalId":249267,"journal":{"name":"IVESC 2012","volume":"1997 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125583272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Moving toward sustainability in cathode manufacturing process 阴极制造工艺的可持续发展
IVESC 2012 Pub Date : 2012-04-24 DOI: 10.1109/IVESC.2012.6264204
S. Roberts, M. Effgen
{"title":"Moving toward sustainability in cathode manufacturing process","authors":"S. Roberts, M. Effgen","doi":"10.1109/IVESC.2012.6264204","DOIUrl":"https://doi.org/10.1109/IVESC.2012.6264204","url":null,"abstract":"Meeting present and future sustainability requirements in cathode manufacturing processes are now major issues for vacuum electron device manufacturers. Global material and energy resources, markets, and economies have direct relationships on vendor pricing, supply chains, quality and consistency of materials, and ultimately meeting customer requirements. This paper will identify and discuss historical actions, baseline efforts, and a future model for sustainable cathode manufacturing.","PeriodicalId":249267,"journal":{"name":"IVESC 2012","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126952324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hafnium carbide CFE, TFE, and schottky electron sources 碳化铪CFE, TFE和肖特基电子源
IVESC 2012 Pub Date : 2012-04-24 DOI: 10.1109/IVESC.2012.6264168
W. Mackie, J. Lovell, G. Magera
{"title":"Hafnium carbide CFE, TFE, and schottky electron sources","authors":"W. Mackie, J. Lovell, G. Magera","doi":"10.1109/IVESC.2012.6264168","DOIUrl":"https://doi.org/10.1109/IVESC.2012.6264168","url":null,"abstract":"We report on CFE and TFE cathodes using (310) oriented hafnium carbide. These have been operated in UHV and temperatures from 300 K to 1900 K. Emission data show dramatic increases while operating at elevated temperatures due to work function lowering. Artificial faceting using FIB techniques shows promise for this cathode operating in Schottky emission mode.","PeriodicalId":249267,"journal":{"name":"IVESC 2012","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128870952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of biased diamond current amplifier 偏置金刚石电流放大器的研制
IVESC 2012 Pub Date : 2012-04-24 DOI: 10.1109/IVESC.2012.6264195
J. Yater, J. Shaw, K. Jensen, F. Wood, T. Feygelson, J. Hanna, B. Pate
{"title":"Development of biased diamond current amplifier","authors":"J. Yater, J. Shaw, K. Jensen, F. Wood, T. Feygelson, J. Hanna, B. Pate","doi":"10.1109/IVESC.2012.6264195","DOIUrl":"https://doi.org/10.1109/IVESC.2012.6264195","url":null,"abstract":"A diamond current amplifier is being developed that can be biased to generate an internal electric field needed for high transport efficiency and emission gain. In the process, a bonded diamond structure has been successfully fabricated that provides mechanical support for the microns-thick diamond film and that allows for the use of processing techniques needed to fabricate the biased device. Emission measurements taken from the hydrogenated surface of a 5.4-micron-thick bonded diamond film reveal a temperature-dependent behavior that suggests the presence of upwards band bending at the surface. Studies are in progress to identify the cause of the band bending at the hydrogenated surface and to develop a better understanding of the surface electronic and material properties that influence the amplifier performance.","PeriodicalId":249267,"journal":{"name":"IVESC 2012","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114340258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RF circuit design of a multi-gap W-band sheet beam klystron 多间隙w波段片束速调管射频电路设计
IVESC 2012 Pub Date : 2012-04-24 DOI: 10.1109/IVESC.2012.6264161
Guo Liu, Yong Luo, Jian-xun Wang
{"title":"RF circuit design of a multi-gap W-band sheet beam klystron","authors":"Guo Liu, Yong Luo, Jian-xun Wang","doi":"10.1109/IVESC.2012.6264161","DOIUrl":"https://doi.org/10.1109/IVESC.2012.6264161","url":null,"abstract":"RF interaction circuits of a multi-gap W-band sheet beam klystron (WSBK), consisting of the input couplers, multi-gap bunching cavities and tapered output cavities were designed. All the circuits are employed for a 7.2mm×0.6mm (aspect ratio 12:1) sheet beam. The good performances such as E-field distribution, mode interval, R/Q and beam-wave coupling coefficient for a single and dual gaps quasi-optical (QO) input couplers, 1-5 gaps bunching cavities and 3-5 gaps QO output couplers were designed and presented by the HFSS and CST-MWS codes.","PeriodicalId":249267,"journal":{"name":"IVESC 2012","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116618817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reservoir cathode for ion thrusters 离子推进器用储层阴极
IVESC 2012 Pub Date : 2012-04-24 DOI: 10.1109/IVESC.2012.6264171
B. Vancil, V. Schmidt, W. Ohlinger, J. Polk
{"title":"Reservoir cathode for ion thrusters","authors":"B. Vancil, V. Schmidt, W. Ohlinger, J. Polk","doi":"10.1109/IVESC.2012.6264171","DOIUrl":"https://doi.org/10.1109/IVESC.2012.6264171","url":null,"abstract":"A novel, reservoir-type hollow cathode has been designed, constructed and tested. It provides improved control of the barium dispensation rate to the electron-emitting surface and superior structural integrity relative to previous art. The cathode offers the possibility of much longer life than currently used impregnated dispenser cathodes. This is due to its larger barium supply capacity and lack of pore constriction caused by inert by-product build-up. The structural integrity was verified by extensive thermal cycling and extended operation at typical operating temperatures in vacuum. Barium production was characterized and reservoir integrity was verified both before and after thermal cycling. Cathode emission was measured to an axially-located tungsten wire and was consistent with tungsten cathodes having full barium coverage. Data will be presented and future work discussed.","PeriodicalId":249267,"journal":{"name":"IVESC 2012","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125697553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Metal alloy cathodes for application in vacuum microwave devices 真空微波器件中应用的金属合金阴极
IVESC 2012 Pub Date : 2012-04-24 DOI: 10.1109/IVESC.2012.6264173
B. Djubua, O. Kultashev, A. P. Makarov, O. V. Polivnikova, E. M. Zemchikhin
{"title":"Metal alloy cathodes for application in vacuum microwave devices","authors":"B. Djubua, O. Kultashev, A. P. Makarov, O. V. Polivnikova, E. M. Zemchikhin","doi":"10.1109/IVESC.2012.6264173","DOIUrl":"https://doi.org/10.1109/IVESC.2012.6264173","url":null,"abstract":"Metal alloy cathodes based on alloys Pt-Ba, Pd-Ba, Ir-La, Ir-Ce, Os-Th and Re-Th are described. These metal alloy cathodes have a unique combination of emission, thermal and physical properties and found a wide application in vacuum microwave devices (traveling-wave tubes, backward-wave oscillators, klystrons, magnetrons). Cathode design of these metal alloy cathodes is described and will be presented.","PeriodicalId":249267,"journal":{"name":"IVESC 2012","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123499608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Synthesize carbon nanotube field emitters by local heating chemical vapor deposition 局部加热化学气相沉积法合成碳纳米管场致发射体
IVESC 2012 Pub Date : 2012-04-24 DOI: 10.1109/IVESC.2012.6264164
Feng Gao, Mei Xiao, Xiaobing Zhang
{"title":"Synthesize carbon nanotube field emitters by local heating chemical vapor deposition","authors":"Feng Gao, Mei Xiao, Xiaobing Zhang","doi":"10.1109/IVESC.2012.6264164","DOIUrl":"https://doi.org/10.1109/IVESC.2012.6264164","url":null,"abstract":"The effects of growth time on synthesizing of carbon nanotubes were reported. Prepared different forms of carbon nanotubes on silicon substrates by local heating chemical vapor deposition. The results showed that most of carbon nanotubes grew out with small diameter (60-80nm) and thinner in the case of short growth time (30s); when the growth time increased to 10 min or even longer, most of carbon nanotubes had large diameter(over 500nm) and there were many small CNTs attached to the wall of big carbon nanotubes; long growth time (10min) carbon nanotubes had good performance on field emission current and stability, but the shorter growth time (30s) one was much worse.","PeriodicalId":249267,"journal":{"name":"IVESC 2012","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121231968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development and characterization of the porous tungsten matrix obtaining process for dispenser thermionic cathode 分配器热离子阴极多孔钨基制备工艺的开发与表征
IVESC 2012 Pub Date : 2012-04-24 DOI: 10.1109/IVESC.2012.6264175
F. F. Sene, A. G. C. Silva, C. Motta
{"title":"Development and characterization of the porous tungsten matrix obtaining process for dispenser thermionic cathode","authors":"F. F. Sene, A. G. C. Silva, C. Motta","doi":"10.1109/IVESC.2012.6264175","DOIUrl":"https://doi.org/10.1109/IVESC.2012.6264175","url":null,"abstract":"W-Cu composites were used as starter materials of the thermionic cathode matrices for microwave tubes. However the decopperization affects their microstructure. An apparatus and an experimental procedure were developed to reduce the damages introduced during the decopperization. The matrix porosity (34.6%) was analyzed by SEM and its composition was determined by EDX.","PeriodicalId":249267,"journal":{"name":"IVESC 2012","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121558874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Scattering and the prediction of Quantum Efficiency and response time characteristics 散射与量子效率和响应时间特性的预测
IVESC 2012 Pub Date : 2012-04-24 DOI: 10.1109/IVESC.2012.6264180
K. Jensen, J. Yater, J. Shaw, B. Pate, E. Montgomery, D. Feldman, P. O'Shea, J. Petillo
{"title":"Scattering and the prediction of Quantum Efficiency and response time characteristics","authors":"K. Jensen, J. Yater, J. Shaw, B. Pate, E. Montgomery, D. Feldman, P. O'Shea, J. Petillo","doi":"10.1109/IVESC.2012.6264180","DOIUrl":"https://doi.org/10.1109/IVESC.2012.6264180","url":null,"abstract":"Quantum Efficiency from photocathodes and Yield from diamond secondary emitters are affected by scattering during electron transport in bulk material. The emission distribution is required to predict how current density and emittance from these sources affect beam transport in Particle-in-Cell codes, particularly MICHELLE. Monte Carlo is used to augment a standard Three-Step-Model (TSM) based model used for photocathodes, and to model secondary emission inside the thin film diamond flake in a Diamond Current Amplifier. In both, how electron bunches generated within the semiconductor material evolve under band bending and transport change how many are emitted, and consequently the temporal characteristics and phase space distribution of the emitted bunch are likewise changed. We describe the status of the emission models, how scattering changes the temporal characteristics, and progress in developing simple models to account for the effects of scattering in a manner appropriate for incorporation into MICHELLE.","PeriodicalId":249267,"journal":{"name":"IVESC 2012","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115316285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信