碳化铪CFE, TFE和肖特基电子源

IVESC 2012 Pub Date : 2012-04-24 DOI:10.1109/IVESC.2012.6264168

W. Mackie, J. Lovell, G. Magera

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引用次数: 1

摘要

我们报道了用(310)取向碳化铪制备CFE和TFE阴极。这些已经在特高压和300 K到1900 K的温度下运行。排放数据显示，在高温下运行时，由于功函数降低，排放急剧增加。在肖特基发射模式下，使用FIB技术进行人工切面显示了这种阴极的前景。

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Hafnium carbide CFE, TFE, and schottky electron sources

We report on CFE and TFE cathodes using (310) oriented hafnium carbide. These have been operated in UHV and temperatures from 300 K to 1900 K. Emission data show dramatic increases while operating at elevated temperatures due to work function lowering. Artificial faceting using FIB techniques shows promise for this cathode operating in Schottky emission mode.

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来源期刊

IVESC 2012

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