MPCVD生长硼掺杂金刚石膜的二次电子发射研究

IVESC 2012 Pub Date : 2012-04-24 DOI:10.1109/IVESC.2012.6264187

M. Ding, Lili Li, Jinjun Feng, Yujuan Gao, Qilue Chen, Wensheng Shao

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引用次数: 1

摘要

在一次光束能量为1KeV时，在空气中放置掺杂b的金刚石样品数周，并且在测量之前不进行任何处理，发现了18.3的高二次产率。氧化处理破坏了负电子亲和(NEA)，而真空加热基本上恢复了NEA。

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Investigations of secondary electron emission from boron doped diamond films grown by MPCVD

A high secondary yield of 18.3 at 1KeV primary beam energy was found, with the B-doped diamond sample left in air for weeks and subject to no treatment prior to the measurement. Oxidation treatment destroys negative electron affinity (NEA) whereas heating in vacuum substantially regains NEA.

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IVESC 2012

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