偏置金刚石电流放大器的研制

J. Yater, J. Shaw, K. Jensen, F. Wood, T. Feygelson, J. Hanna, B. Pate
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引用次数: 0

摘要

目前正在开发一种金刚石电流放大器,它可以偏置以产生高传输效率和发射增益所需的内部电场。在这个过程中,一个结合的金刚石结构已经被成功地制造出来,它为微米厚的金刚石薄膜提供了机械支撑,并且允许使用制造偏置器件所需的加工技术。从5.4微米厚的氢化金刚石膜表面进行的发射测量揭示了一种温度依赖行为,表明表面存在向上的能带弯曲。研究正在进行中,以确定氢化表面的能带弯曲的原因,并更好地了解影响放大器性能的表面电子和材料特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of biased diamond current amplifier
A diamond current amplifier is being developed that can be biased to generate an internal electric field needed for high transport efficiency and emission gain. In the process, a bonded diamond structure has been successfully fabricated that provides mechanical support for the microns-thick diamond film and that allows for the use of processing techniques needed to fabricate the biased device. Emission measurements taken from the hydrogenated surface of a 5.4-micron-thick bonded diamond film reveal a temperature-dependent behavior that suggests the presence of upwards band bending at the surface. Studies are in progress to identify the cause of the band bending at the hydrogenated surface and to develop a better understanding of the surface electronic and material properties that influence the amplifier performance.
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