J. Yater, J. Shaw, K. Jensen, F. Wood, T. Feygelson, J. Hanna, B. Pate
{"title":"Development of biased diamond current amplifier","authors":"J. Yater, J. Shaw, K. Jensen, F. Wood, T. Feygelson, J. Hanna, B. Pate","doi":"10.1109/IVESC.2012.6264195","DOIUrl":null,"url":null,"abstract":"A diamond current amplifier is being developed that can be biased to generate an internal electric field needed for high transport efficiency and emission gain. In the process, a bonded diamond structure has been successfully fabricated that provides mechanical support for the microns-thick diamond film and that allows for the use of processing techniques needed to fabricate the biased device. Emission measurements taken from the hydrogenated surface of a 5.4-micron-thick bonded diamond film reveal a temperature-dependent behavior that suggests the presence of upwards band bending at the surface. Studies are in progress to identify the cause of the band bending at the hydrogenated surface and to develop a better understanding of the surface electronic and material properties that influence the amplifier performance.","PeriodicalId":249267,"journal":{"name":"IVESC 2012","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IVESC 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVESC.2012.6264195","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A diamond current amplifier is being developed that can be biased to generate an internal electric field needed for high transport efficiency and emission gain. In the process, a bonded diamond structure has been successfully fabricated that provides mechanical support for the microns-thick diamond film and that allows for the use of processing techniques needed to fabricate the biased device. Emission measurements taken from the hydrogenated surface of a 5.4-micron-thick bonded diamond film reveal a temperature-dependent behavior that suggests the presence of upwards band bending at the surface. Studies are in progress to identify the cause of the band bending at the hydrogenated surface and to develop a better understanding of the surface electronic and material properties that influence the amplifier performance.