{"title":"Hafnium carbide CFE, TFE, and schottky electron sources","authors":"W. Mackie, J. Lovell, G. Magera","doi":"10.1109/IVESC.2012.6264168","DOIUrl":null,"url":null,"abstract":"We report on CFE and TFE cathodes using (310) oriented hafnium carbide. These have been operated in UHV and temperatures from 300 K to 1900 K. Emission data show dramatic increases while operating at elevated temperatures due to work function lowering. Artificial faceting using FIB techniques shows promise for this cathode operating in Schottky emission mode.","PeriodicalId":249267,"journal":{"name":"IVESC 2012","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IVESC 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVESC.2012.6264168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We report on CFE and TFE cathodes using (310) oriented hafnium carbide. These have been operated in UHV and temperatures from 300 K to 1900 K. Emission data show dramatic increases while operating at elevated temperatures due to work function lowering. Artificial faceting using FIB techniques shows promise for this cathode operating in Schottky emission mode.