M. Naeim, Hanqi Yang, Pinhong Chen, Rong Bao, Antoine Dekeyser, G. Sisto, Moritz Brunion, Rongmei Chen, G. V. D. Plas, E. Beyne, D. Milojevic
{"title":"Design Enablement of 3-Dies Stacked 3D-ICs Using Fine-Pitch Hybrid-Bonding and TSVs","authors":"M. Naeim, Hanqi Yang, Pinhong Chen, Rong Bao, Antoine Dekeyser, G. Sisto, Moritz Brunion, Rongmei Chen, G. V. D. Plas, E. Beyne, D. Milojevic","doi":"10.1109/3DIC57175.2023.10155075","DOIUrl":"https://doi.org/10.1109/3DIC57175.2023.10155075","url":null,"abstract":"Multi-dies stack 3D-ICs are an extension of traditional 2-dies 3D-ICs to address the memory wall and footprint problems. This paper presents a complete Place-and-Route (PnR) flow to enable 3-dies stacked 3D-ICs from netlist partitioning to timing analysis, including original cross-dies co-optimization steps. The proposed flow is based on Integrity™ 3D-IC tool from Cadence. To demonstrate the flow, openPITON-T1 Tile design with IMEC N2 Process Design Kit (PDK) is used. The same design is implemented in normal 2D PnR flow and the proposed 3-dies stack flow. Our results show that a 3-dies stack design can achieve up to 11.4% increase in effective frequency and 50% less system footprint when compared with its 2D counterpart.","PeriodicalId":245299,"journal":{"name":"2023 IEEE International 3D Systems Integration Conference (3DIC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123733991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Somnath Pal, Liang Ye, J. O'Callaghan, F. Atar, C. O'Mathúna, B. Corbett, R. Sai, Sambuddha Khan
{"title":"A Study on a Tether-Less Approach Towards Micro-Transfer-Printing of Large-Footprint Power Micro-Inductor Chiplets","authors":"Somnath Pal, Liang Ye, J. O'Callaghan, F. Atar, C. O'Mathúna, B. Corbett, R. Sai, Sambuddha Khan","doi":"10.1109/3DIC57175.2023.10155034","DOIUrl":"https://doi.org/10.1109/3DIC57175.2023.10155034","url":null,"abstract":"In recent years, need for large-scale, multi-layer, high-capacity integration for electronic systems has sky-rocketed. In this regard, a novel heterogeneous integration technique called Micro-transfer-printing $(mu mathbf{TP})$ has attracted a lot of attention due to its unique ability to integrate chiplets from heterogeneous sources on to a target substrate. Typically, the chiplets are picked up from a donor substrate using an elastomer stamp by breaking the surrounding micro-tethers and then printed onto a target substrate for further processing. Despite its success in applications like sensors, photovoltaics, photonics, etc., $mu mathbf{TP}$ finds its limitation in handling chiplet dimensions larger than 100 $mathbf{x} 100 mathrm{x} 20 mu mathbf{m}^{3}$. Therefore, reports on $mu mathbf{TP}$ of passive components like micro-inductors and micro-transformers with dimension in mm x mm and thickness of 100s of $mu mathbf{m}$ are non-existent. In this paper, a completely novel, non-classical, tether-less approach has been demonstrated for micro-inductors with large footprint. This paper also reports a customized PDMS stamp fabrication and optimized post-fabrication sample preparation steps, such as, substrate thinning and polishing while retaining device performance intact.","PeriodicalId":245299,"journal":{"name":"2023 IEEE International 3D Systems Integration Conference (3DIC)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115639384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jiaying Shen, Chang Liu, Tadaaki Hoshi, Atsushi Sinoda, H. Kino, Tetsu Tanaka, M. Mariappan, M. Koyanagi, T. Fukushima
{"title":"Impact of Super-long-throw PVD on TSV Metallization and Die-to-Wafer 3D Integration Based on Via-last","authors":"Jiaying Shen, Chang Liu, Tadaaki Hoshi, Atsushi Sinoda, H. Kino, Tetsu Tanaka, M. Mariappan, M. Koyanagi, T. Fukushima","doi":"10.1109/3DIC57175.2023.10154930","DOIUrl":"https://doi.org/10.1109/3DIC57175.2023.10154930","url":null,"abstract":"The increasing demands for high-quality and high-aspect-ratio Through-Silicon Vias (TSVs) in three-dimensional integrated circuits (3D-IC) have made Si process technologies a significant challenge. Long-throw ionized Physical Vapor Deposition (iPVD) is widely used for barrier/seed layer deposition prior to Cu filling by electroplating for TSV. However, a micro-scale shadowing effect in deep Si holes with high aspect ratios results in failed filling. Bosch etching process can form the high-aspect-ratio deep Si holes but it leaves nuisance scallop features that further increase another submicron-scale shadowing effect. This study aims to explore the impact of super long-throw iPVD with low-frequency RF substrate bias to form high-aspect-ratio TSVs and compares the Cu coverages with a standard magnetron sputtering of non-ionized PVD for 3D-IC rapid prototyping.","PeriodicalId":245299,"journal":{"name":"2023 IEEE International 3D Systems Integration Conference (3DIC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125245519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Measurement Point Selection Algorithms for Testing Power TSVs","authors":"K. Hachiya","doi":"10.1109/3DIC57175.2023.10154929","DOIUrl":"https://doi.org/10.1109/3DIC57175.2023.10154929","url":null,"abstract":"The author proposed a method to detect the open defect of power TSV in 3D-IC by measuring the resistance between power pads directly below the TSVs (Through Silicon Vias). The method seeks the measurement point with the maximum diagnostic performance by time-consuming exhaustive search (ES). This paper proposes applying hill climbing (HC) or exhaustive neighborhood search (ENS) to accelerate the search. The experiment shows that HC achieves about 11 times speedup and ENS achieves ten times speedup over ES with negligible diagnostic performance degradation. Additional speedup is achieved by reusing diagnostic performance calculated for the other pair of measurement points with the same TSV arrangement around them and the same distance between them.","PeriodicalId":245299,"journal":{"name":"2023 IEEE International 3D Systems Integration Conference (3DIC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125470156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. C. Durmaz, C. Heine, Zhibo Cao, Jens Lehmann, D. Kissinger, M. Wietstruck
{"title":"SiGe BiCMOS Technology with Embedded Microchannels based on Cu Pillar PCB Integration Enabling sub-THz Microfluidic Sensor Applications","authors":"E. C. Durmaz, C. Heine, Zhibo Cao, Jens Lehmann, D. Kissinger, M. Wietstruck","doi":"10.1109/3DIC57175.2023.10155073","DOIUrl":"https://doi.org/10.1109/3DIC57175.2023.10155073","url":null,"abstract":"This paper presents a novel copper pillar based microfluidic integration within a high performance SiGe BiCMOS technology. An embedded calorimetric thermal flow sensor as key microfluidic component has been implemented based on a standard BiCMOS BEOL metallization. The integration concept has been analyzed in terms of technological development as well as it has been established via microfluidic characterization of the designed flow meter sensor. The BiCMOS microfluidic technology platform will be utilized as a sensor platform for sub-THz microfluidic sensor applications.","PeriodicalId":245299,"journal":{"name":"2023 IEEE International 3D Systems Integration Conference (3DIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130300323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Murugesan, M. Sawa, E. Sone, M. Motoyoshi, M. Koyanagi, T. Fukushima
{"title":"Copper Electrode Surface Features and Cu-SiO2Hybrid Bonding","authors":"M. Murugesan, M. Sawa, E. Sone, M. Motoyoshi, M. Koyanagi, T. Fukushima","doi":"10.1109/3DIC57175.2023.10154924","DOIUrl":"https://doi.org/10.1109/3DIC57175.2023.10154924","url":null,"abstract":"We have attempted to study the nature of Copper (Cu)-electrode surfaces formed from two distinct Cu-electroplating baths with different additives. The phase-shift data obtained from the intermittent-contact atomic force microscopy analysis revealed the following that the soft Cuelectrode with higher tensile strength formed from modified Cu-electroplating possesses more reactive surface than the harder Cu-electrode formed from conventional Cu-electroplating. Thus, we inferred that this soft nature of Cu grains is also important for successful $mathbf{Cu}-mathbf{SiO}_{2}$ hybrid bonding, and it does play a vital role in realizing the seamless Cu-Cu interface in the Cu $mu$ -joints formed by Cu-SiO2 hybrid bonding.","PeriodicalId":245299,"journal":{"name":"2023 IEEE International 3D Systems Integration Conference (3DIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128831958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Po-Yao Chuang, Francesco Lorenzelli, S. Chakravarty, Slimane Boutobza, Cheng-Wen Wu, G. Gielen, E. Marinissen
{"title":"Effective and Efficient Test and Diagnosis Pattern Generation for Many Inter-Die Interconnects in Chiplet-Based Packages","authors":"Po-Yao Chuang, Francesco Lorenzelli, S. Chakravarty, Slimane Boutobza, Cheng-Wen Wu, G. Gielen, E. Marinissen","doi":"10.1109/3DIC57175.2023.10154900","DOIUrl":"https://doi.org/10.1109/3DIC57175.2023.10154900","url":null,"abstract":"Chiplet-based (2.5D and 3D) multi-die packages implement large amounts of inter-die interconnects with micro-bump connections and possibly TSVs. These interconnects can be subject to manufacturing defects. The most common defects are shorts and opens, which occur both in hard and weak (= resistive) variants. Traditional interconnect automatic test pattern generation (I-ATPG) methods only cover hard defects. These methods are generally considered efficient, as their test pattern counts scale logarithmically with the number of interconnects $k$. However, they cover short defects between all interconnects, including those for which shorts are unrealistic given their relative layout positions. In this paper, we propose E2ITEST, a modified True/Complement test [1], which covers, for a given collection of interconnects, all hard and weak variants of only realistic short and open defects. Supporting fault diagnosis, E2ITEST also prevents aliasing. While it is predicted that the number of interconnects $k$ will rise significantly in the near future, E2ITEST provides a high-quality interconnect test for which the number of test patterns is constant and no longer dependent on $k$.","PeriodicalId":245299,"journal":{"name":"2023 IEEE International 3D Systems Integration Conference (3DIC)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123667364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fast, Accurate Assembly-Level Physical Verification of 3DIC Packages","authors":"N. Hossam, J. Ferguson","doi":"10.1109/3DIC57175.2023.10155000","DOIUrl":"https://doi.org/10.1109/3DIC57175.2023.10155000","url":null,"abstract":"Advanced packaging techniques are critical to ensuring product performance, function, and cost in the semiconductor industry. Three-dimensional integrated circuits (3DICs) offer the ultimate flexibility in product design. However, they are not without their challenges, bringing packaging technologies to the forefront for innovation. 3DICs contain multiple stacked die that achieve the required connectivity through traces on an interposer, or with special vias or bumps. Independently verifying the physical and connectivity accuracy of these discrete dies and substrates per their process rules does not ensure that the overall 2.5D/3D package assembly is correct, or will perform as expected. The Calibre 3DSTACK electronic design automation (EDA) tool provides fast, accurate, assembly-level verification of die-die or die-interposer interfaces in 3DIC designs. It operates on the interface geometries between chip designs from multiple process nodes to perform both design rule checking (DRC) alignment verification and layout vs. schematic (LVS) connectivity checking of the complete multi-die 2.5D or 3DIC system. Design engineers can also use the Calibre 3DSTACK tool to prepare the data required for coupling capacitance extraction, if required. In this paper, we explain the differences between traditional 3DIC physical verification techniques and Calibre 3DSTACK 3DIC assembly verification, and demonstrate how Calibre 3DSTACK functionality can be used to resolve many of the challenges of 3DIC physical verification while ensuring the accuracy and performance of the complete 3DIC design.","PeriodicalId":245299,"journal":{"name":"2023 IEEE International 3D Systems Integration Conference (3DIC)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130195494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Erik W. Masselink, A. Stark, Benjamin B. Yang, T. R. Harris
{"title":"Review of Hybrid Integration Techniques for Integrating III-V Onta Silicon","authors":"Erik W. Masselink, A. Stark, Benjamin B. Yang, T. R. Harris","doi":"10.1109/3DIC57175.2023.10154923","DOIUrl":"https://doi.org/10.1109/3DIC57175.2023.10154923","url":null,"abstract":"Silicon photonics promises higher on-chip communication speeds through optical interconnects, high performance LIDAR sensors, advances in biological sensors, and high performance, high-bandwidth 5G transceivers. It has the unique advantage that it is compatible with current CMOS technology. While silicon photonic devices can integrate nearly any desired photonic structure, silicon itself is an indirect bandgap semiconductor so the light source for any photonic circuit must be sourced elsewhere. Coupling a light source from off-chip remains one of the most difficult packaging, performance, and integration challenges for silicon photonics. To address these issues, myriad research efforts over the last several years have focused on heterogeneously integrating direct-bandgap materials like indium phosphide (InP) directly onto silicon photonic devices. Hybrid integration is a promising integration technique because it allows the CMOS or III-V laser diode fabrication processes to be optimized independently. This paper provides a review of state-of-the-art hybrid integration technologies, including bonding and alignment techniques, and how to integrate those with CMOS technologies. The focus will be on telecom wavelength edge coupled laser diodes since these are well established and have low coupling losses.","PeriodicalId":245299,"journal":{"name":"2023 IEEE International 3D Systems Integration Conference (3DIC)","volume":"355 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124479099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Welcome to 3DIC 2023","authors":"","doi":"10.1109/3dic57175.2023.10154951","DOIUrl":"https://doi.org/10.1109/3dic57175.2023.10154951","url":null,"abstract":"","PeriodicalId":245299,"journal":{"name":"2023 IEEE International 3D Systems Integration Conference (3DIC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126651340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}