铜电极表面特征与cu - sio2杂化键合

M. Murugesan, M. Sawa, E. Sone, M. Motoyoshi, M. Koyanagi, T. Fukushima
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引用次数: 0

摘要

我们试图研究由两种不同的镀铜槽和不同的添加剂形成的铜(Cu)电极表面的性质。间歇接触原子力显微镜相移分析结果表明,改性镀铜形成的软铜电极比传统镀铜形成的硬铜电极具有更高的活性表面,具有更高的抗拉强度。因此,我们推断Cu晶粒的这种软性质对于Cu- sio2杂化键成功的$\mathbf{Cu}-\mathbf{SiO}_{2}$杂化键也很重要,并且在Cu- sio2杂化键形成的Cu $\mu$ -接头中实现Cu-Cu界面的无缝连接起着至关重要的作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Copper Electrode Surface Features and Cu-SiO2Hybrid Bonding
We have attempted to study the nature of Copper (Cu)-electrode surfaces formed from two distinct Cu-electroplating baths with different additives. The phase-shift data obtained from the intermittent-contact atomic force microscopy analysis revealed the following that the soft Cuelectrode with higher tensile strength formed from modified Cu-electroplating possesses more reactive surface than the harder Cu-electrode formed from conventional Cu-electroplating. Thus, we inferred that this soft nature of Cu grains is also important for successful $\mathbf{Cu}-\mathbf{SiO}_{2}$ hybrid bonding, and it does play a vital role in realizing the seamless Cu-Cu interface in the Cu $\mu$ -joints formed by Cu-SiO2 hybrid bonding.
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