Measurement Point Selection Algorithms for Testing Power TSVs

Abstract

The author proposed a method to detect the open defect of power TSV in 3D-IC by measuring the resistance between power pads directly below the TSVs (Through Silicon Vias). The method seeks the measurement point with the maximum diagnostic performance by time-consuming exhaustive search (ES). This paper proposes applying hill climbing (HC) or exhaustive neighborhood search (ENS) to accelerate the search. The experiment shows that HC achieves about 11 times speedup and ENS achieves ten times speedup over ES with negligible diagnostic performance degradation. Additional speedup is achieved by reusing diagnostic performance calculated for the other pair of measurement points with the same TSV arrangement around them and the same distance between them.