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2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)最新文献

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Thin titanium oxide films obtained by RTP and by sputtering 采用RTP和溅射法制备氧化钛薄膜
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940120
R. Cesar, A. D. Barros, I. Doi, J. A. Diniz, J. Swart
{"title":"Thin titanium oxide films obtained by RTP and by sputtering","authors":"R. Cesar, A. D. Barros, I. Doi, J. A. Diniz, J. Swart","doi":"10.1109/SBMICRO.2014.6940120","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940120","url":null,"abstract":"In this paper, two methods to obtain titanium oxide (TiO2) thin films are compared. In the first method metallic titanium (Ti) is deposited by sputtering and then oxidized by rapid thermal process (RTP) in an oxygen atmosphere to form the TiO2 thin films. The second method consists in TiO2 deposition by reactive sputtering. Structural characterization of the prepared samples shows the rutile crystal structure for both films, but TiO2 thin film deposited by sputtering also presented anatase crystal structure. Capacitors were fabricated and the electrical characterization of TiO2 films realized in order to determine which method forms the best dielectric film, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134339615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Quartz and GaPO4 pressure transducers for high resolution applications in high temperature: A simulation approach 用于高温高分辨率应用的石英和GaPO4压力传感器:模拟方法
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940116
Leonardo B. M. Silva, Edval J. P. Santos
{"title":"Quartz and GaPO4 pressure transducers for high resolution applications in high temperature: A simulation approach","authors":"Leonardo B. M. Silva, Edval J. P. Santos","doi":"10.1109/SBMICRO.2014.6940116","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940116","url":null,"abstract":"An accurate computer model was created for the extraction of the quality factor, Q, and the sensitivity of piezoelectric pressure transducer. The quality factor is a key parameter to determine the transducer resolution. The effect of viscosity loss and geometrical factors, such as: thickness, diameter, and concavity (plano-convex and bi-convex) are simulated in AT-cut quartz and Hi-Q cut gallium phosphate (GaPO4) materials. AT-cut quartz is a standard material in this type of application, and gallium phosphate is a promising material for advanced pressure transducer. The goal is to evaluate device specifications to achieve the highest Q-factor (Q > 106) at frequencies up to 10 MHz. Temperature dependent elastic constants and boundary load conditions are used to simulate temperature and hydrostatic pressure effects on the vibrating transducer. The frequency shift is simulated in the range of 25 °C to 200 °C and 14.7 psi to 20,000 psi for temperature and pressure, respectively. The simulation results allows for a resolution of 1 psi for a frequency resolution of 1 ppm. All simulations are carried out with COMSOL Multiphysics software, version 4.4.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122364832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improved continuous model for short channel double-gate junctionless transistors 改进的短沟道双栅无结晶体管连续模型
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940100
B. Cardoso Paz, Fernando Avila, A. Cerdeira, M. Pavanello
{"title":"Improved continuous model for short channel double-gate junctionless transistors","authors":"B. Cardoso Paz, Fernando Avila, A. Cerdeira, M. Pavanello","doi":"10.1109/SBMICRO.2014.6940100","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940100","url":null,"abstract":"This work aims to present an evolution of a continuous model for short channel double-gate junctionless transistors, where the saturation velocity is included and model validation is spread to different doping concentrations, channel widths and shorter channel lengths. A long channel charge-based model for double-gate devices is used as a basis for the development of this model. To consider the short channel effects, the proposed model accounts for the influence of the drain bias in the channel potential, the reduction of the effective channel length in saturation regime and the saturation velocity effect for short channel transistors. Three dimensional numerical simulations will be used to validate the model.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127529475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Two-dimensional diffraction grating fabricated by maskless lithography 用无掩模光刻技术制备二维衍射光栅
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940083
G. Cirino, A. Montagnoli, N. Frateschi
{"title":"Two-dimensional diffraction grating fabricated by maskless lithography","authors":"G. Cirino, A. Montagnoli, N. Frateschi","doi":"10.1109/SBMICRO.2014.6940083","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940083","url":null,"abstract":"This work presents the fabrication of a two-dimensional diffraction grating with light phase modulation. The device was designed by employing the Iterative Fourier Transform Algorithm and fabricated by maskless direct laser writing system. Optical characterization of the diffraction pattern shown a good matching between the fabricated device and its design.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131091961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Silicon nitride for nonlinear optics applications in the telecommunications C-band deposited by ECR-CVD ECR-CVD沉积的电信c波段非线性光学用氮化硅
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940088
A. R. Nascimento, L. Manera, J. A. Diniz, Audrey R. Silva, M. P. Santos, S. A. Cerqueira, L. Barea, N. Frateschi
{"title":"Silicon nitride for nonlinear optics applications in the telecommunications C-band deposited by ECR-CVD","authors":"A. R. Nascimento, L. Manera, J. A. Diniz, Audrey R. Silva, M. P. Santos, S. A. Cerqueira, L. Barea, N. Frateschi","doi":"10.1109/SBMICRO.2014.6940088","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940088","url":null,"abstract":"Silicon nitride films deposited by low-pressure electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD) at room temperature are proposed for nonlinear optics applications in the telecommunications C-band. Numerical simulations were performed to determine the relationship between refractive index and the waveguide minimum size in order to have the zero dispersion point at 1.55 μm. Silicon nitride films with large thickness, low roughness and high refractive index were obtained by varying deposition parameters, such as gas pressure (4-6 mTorr) and Si/N ratio. The Si-rich silicon nitride film developed for nonlinear applications with refractive index of 2, high deposition rate, low hydrogen concentration and low roughness was used for fabrication of nonlinear microring resonators. Using the deposition process at low temperature, the stress limitation in thick silicon nitride films was eliminated.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114142583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A simulation study of self-heating effect on junctionless nanowire transistors 无结纳米线晶体管自热效应的仿真研究
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940109
G. Mariniello, M. Pavanello
{"title":"A simulation study of self-heating effect on junctionless nanowire transistors","authors":"G. Mariniello, M. Pavanello","doi":"10.1109/SBMICRO.2014.6940109","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940109","url":null,"abstract":"The presence of buried oxide electrically isolating the active silicon region to the substrate in SOI devices leads to better performance than the conventional MOSFETs. However, the thermal resistance associated to this buried oxide causes the self-heating effect which degrades the drain current level. This paper aims at analyzing the self-heating effects influence on junctionless nanowire transistors based on three-dimensional numerical simulations.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114144883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
CMOS Active-Pixel Sensor in low temperature 低温CMOS有源像素传感器
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940114
Pedro V. F. do Rosario, L. P. Salles, Artur S. B. de Mello, D. W. de Lima Monteiro
{"title":"CMOS Active-Pixel Sensor in low temperature","authors":"Pedro V. F. do Rosario, L. P. Salles, Artur S. B. de Mello, D. W. de Lima Monteiro","doi":"10.1109/SBMICRO.2014.6940114","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940114","url":null,"abstract":"This paper presents experimental and simulated results of an Active-Pixel Sensor (APS) circuit operating at different temperatures (300K, 77K, 60K and 40K). The optical sensor used was a silicon photodiode integrated with its electronics in a standard CMOS 0.35μm technology. Interestingly, the pixel worked well at all temperatures tested. These first experimental results are very promising for future hybridization between APS circuits and infrared quantum sensors, mostly on III-V semiconductor substrates, or other applications demanding low temperatures.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114201442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Fabrication of low dark-count PureB single-photon avalanche diodes 低暗计数PureB单光子雪崩二极管的制备
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940113
L. Qi, K. Mok, M. Aminian, E. Charbon, L. Nanver
{"title":"Fabrication of low dark-count PureB single-photon avalanche diodes","authors":"L. Qi, K. Mok, M. Aminian, E. Charbon, L. Nanver","doi":"10.1109/SBMICRO.2014.6940113","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940113","url":null,"abstract":"Single-photon avalanche diodes (SPADs) have been fabricated in Si by using PureB (Pure Boron) chemical-vapor deposition (CVD) to create both a nanometer-thin anode junction and robust light-entrance window. The device is sensitive to low-penetration-depth radiation such as UV light and low-energy electrons. Ideal I-V characteristics are obtained for operation in Geiger mode, whereas biasing is well above the breakdown voltage. The dark count rate (DCR) can be as low as 5 Hz at room temperature for an active area of 7 μm2. An implicit guard ring as small as 0.5 μm wide is implemented using an n-enhancement implantation in the central region of the diode, thus achieving a high fill-factor.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126142316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Precision and accuracy in the measurements of responsivity 测量响应性的精度和准确性
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940098
T. Santos, M. F. Mendonça, R. C. Lopes, C. A. Delfino, G. S. Vieira
{"title":"Precision and accuracy in the measurements of responsivity","authors":"T. Santos, M. F. Mendonça, R. C. Lopes, C. A. Delfino, G. S. Vieira","doi":"10.1109/SBMICRO.2014.6940098","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940098","url":null,"abstract":"In this work we discuss some error sources in the determination of infrared sensors responsivity, identifying, quantifying and, when possible, proposing ways of minimize them. The errors may happen on the reading of electrical signal, or on the illumination of the sensor under test. When reading the electric signal, noise may be read as signal, even when using a lock in amplifier, and also signal intensity may be lost on the electric cables and connections, before reaching the pre-amplifier. During illumination of the sensor, geometrical distortions, unplanned reflections, radiation partial obstruction and atmospheric absorption can make the calculated signal intensity unreal, even if the source itself is a very good one.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133856672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrolyte-Insulator-Semiconductor field effect device for pH detecting 用于pH检测的电解-绝缘体-半导体场效应装置
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940127
R. Cesar, A. D. Barros, I. Doi, J. A. Diniz, J. Swart
{"title":"Electrolyte-Insulator-Semiconductor field effect device for pH detecting","authors":"R. Cesar, A. D. Barros, I. Doi, J. A. Diniz, J. Swart","doi":"10.1109/SBMICRO.2014.6940127","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940127","url":null,"abstract":"This work presents a device for pH measurements called Electrolyte-Insulator-Semiconductor (EIS), which operates as a Metal-Oxide-Semiconductor capacitor but instead of having the metal contact electrode, an electrolyte solution and a reference electrode are used to apply voltage. It was used TiO2 thin film as insulator and sensitive membrane. These films were obtained after rapid thermal oxidation of Ti thin films deposited by sputtering. They were structurally characterized by Raman and ellipsometry which reveal that the films present rutile crystal structure. We use capacitors to make the electrical characterization of TiO2 films in order to determine the annealing time that leads to the best thin film properties, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V. EIS devices are tested through capacitance x voltage (CxV) measurements using different pH solutions. When in contact to the dielectric film, each pH value adds a contribution to the flat band voltage, resulting in a displacement of the CxV curve. It was possible to determine from the flat band voltage (VFB), the sensitivity of 41 mV/pH.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"286 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133719657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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