Electrolyte-Insulator-Semiconductor field effect device for pH detecting

R. Cesar, A. D. Barros, I. Doi, J. A. Diniz, J. Swart
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引用次数: 4

Abstract

This work presents a device for pH measurements called Electrolyte-Insulator-Semiconductor (EIS), which operates as a Metal-Oxide-Semiconductor capacitor but instead of having the metal contact electrode, an electrolyte solution and a reference electrode are used to apply voltage. It was used TiO2 thin film as insulator and sensitive membrane. These films were obtained after rapid thermal oxidation of Ti thin films deposited by sputtering. They were structurally characterized by Raman and ellipsometry which reveal that the films present rutile crystal structure. We use capacitors to make the electrical characterization of TiO2 films in order to determine the annealing time that leads to the best thin film properties, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V. EIS devices are tested through capacitance x voltage (CxV) measurements using different pH solutions. When in contact to the dielectric film, each pH value adds a contribution to the flat band voltage, resulting in a displacement of the CxV curve. It was possible to determine from the flat band voltage (VFB), the sensitivity of 41 mV/pH.
用于pH检测的电解-绝缘体-半导体场效应装置
这项工作提出了一种称为电解质-绝缘体-半导体(EIS)的pH测量装置,它作为金属氧化物-半导体电容器工作,但没有金属接触电极,而是使用电解质溶液和参考电极施加电压。采用TiO2薄膜作为绝缘体和敏感膜。这些薄膜是由溅射沉积的Ti薄膜经过快速热氧化而得到的。用拉曼光谱和椭偏光谱对薄膜进行了结构表征,结果表明薄膜具有金红石晶体结构。我们使用电容器对TiO2薄膜进行电学表征,以确定获得最佳薄膜性能的退火时间,即高介电常数值(high-k),低电荷密度(Q0/q)和-0.9V左右的平带电压(VFB)。EIS器件通过使用不同pH溶液测量电容×电压(CxV)进行测试。当与介电膜接触时,每一个pH值都会增加平带电压,从而导致CxV曲线的位移。从平带电压(VFB)可以确定,灵敏度为41 mV/pH。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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