A simulation study of self-heating effect on junctionless nanowire transistors

Abstract

The presence of buried oxide electrically isolating the active silicon region to the substrate in SOI devices leads to better performance than the conventional MOSFETs. However, the thermal resistance associated to this buried oxide causes the self-heating effect which degrades the drain current level. This paper aims at analyzing the self-heating effects influence on junctionless nanowire transistors based on three-dimensional numerical simulations.