CMOS Active-Pixel Sensor in low temperature

Abstract

This paper presents experimental and simulated results of an Active-Pixel Sensor (APS) circuit operating at different temperatures (300K, 77K, 60K and 40K). The optical sensor used was a silicon photodiode integrated with its electronics in a standard CMOS 0.35μm technology. Interestingly, the pixel worked well at all temperatures tested. These first experimental results are very promising for future hybridization between APS circuits and infrared quantum sensors, mostly on III-V semiconductor substrates, or other applications demanding low temperatures.