采用RTP和溅射法制备氧化钛薄膜

2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI:10.1109/SBMICRO.2014.6940120

R. Cesar, A. D. Barros, I. Doi, J. A. Diniz, J. Swart

{"title":"采用RTP和溅射法制备氧化钛薄膜","authors":"R. Cesar, A. D. Barros, I. Doi, J. A. Diniz, J. Swart","doi":"10.1109/SBMICRO.2014.6940120","DOIUrl":null,"url":null,"abstract":"In this paper, two methods to obtain titanium oxide (TiO2) thin films are compared. In the first method metallic titanium (Ti) is deposited by sputtering and then oxidized by rapid thermal process (RTP) in an oxygen atmosphere to form the TiO2 thin films. The second method consists in TiO2 deposition by reactive sputtering. Structural characterization of the prepared samples shows the rutile crystal structure for both films, but TiO2 thin film deposited by sputtering also presented anatase crystal structure. Capacitors were fabricated and the electrical characterization of TiO2 films realized in order to determine which method forms the best dielectric film, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Thin titanium oxide films obtained by RTP and by sputtering\",\"authors\":\"R. Cesar, A. D. Barros, I. Doi, J. A. Diniz, J. Swart\",\"doi\":\"10.1109/SBMICRO.2014.6940120\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, two methods to obtain titanium oxide (TiO2) thin films are compared. In the first method metallic titanium (Ti) is deposited by sputtering and then oxidized by rapid thermal process (RTP) in an oxygen atmosphere to form the TiO2 thin films. The second method consists in TiO2 deposition by reactive sputtering. Structural characterization of the prepared samples shows the rutile crystal structure for both films, but TiO2 thin film deposited by sputtering also presented anatase crystal structure. Capacitors were fabricated and the electrical characterization of TiO2 films realized in order to determine which method forms the best dielectric film, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V.\",\"PeriodicalId\":244987,\"journal\":{\"name\":\"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMICRO.2014.6940120\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2014.6940120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

本文对制备氧化钛(TiO2)薄膜的两种方法进行了比较。在第一种方法中，金属钛(Ti)通过溅射沉积，然后在氧气气氛中通过快速热过程(RTP)氧化形成TiO2薄膜。第二种方法是反应溅射沉积TiO2。制备样品的结构表征表明，两种薄膜均为金红石型晶体结构，但溅射法制备的TiO2薄膜也呈现锐钛矿型晶体结构。制备了电容器，并对TiO2薄膜进行了电学表征，以确定哪种方法形成最佳介电膜，其定义为高介电常数值(high-k)，低电荷密度(Q0/q)和-0.9V左右的平带电压(VFB)。

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Thin titanium oxide films obtained by RTP and by sputtering

In this paper, two methods to obtain titanium oxide (TiO2) thin films are compared. In the first method metallic titanium (Ti) is deposited by sputtering and then oxidized by rapid thermal process (RTP) in an oxygen atmosphere to form the TiO2 thin films. The second method consists in TiO2 deposition by reactive sputtering. Structural characterization of the prepared samples shows the rutile crystal structure for both films, but TiO2 thin film deposited by sputtering also presented anatase crystal structure. Capacitors were fabricated and the electrical characterization of TiO2 films realized in order to determine which method forms the best dielectric film, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V.

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2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)

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