Improved continuous model for short channel double-gate junctionless transistors

Abstract

This work aims to present an evolution of a continuous model for short channel double-gate junctionless transistors, where the saturation velocity is included and model validation is spread to different doping concentrations, channel widths and shorter channel lengths. A long channel charge-based model for double-gate devices is used as a basis for the development of this model. To consider the short channel effects, the proposed model accounts for the influence of the drain bias in the channel potential, the reduction of the effective channel length in saturation regime and the saturation velocity effect for short channel transistors. Three dimensional numerical simulations will be used to validate the model.