ACS Photonics最新文献_第3页

Can Second-OrderNonlinearity in Metal–DielectricMetamaterials Pave the Way toward Elusive Photonic Time Crystals? 金属介电超材料中的二阶非线性能否为难以捉摸的光子时间晶体铺平道路？

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-13 DOI: 10.1021/acsphotonics.6c01918

Jacob B. Khurgin

引用次数: 0

Twist-ProgrammableExciton Polarization through DualAnisotropic Proximity in CrOCl/WSe2/CrOCl Heterostructures CrOCl/WSe2/CrOCl异质结构中双各向异性接近的扭转可编程激子偏振

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-13 DOI: 10.1021/acsphotonics.6c01717

Yixuan Chen,Xian Zhang,Shikun Hou,Siyu Zhang,Junying Chen,Jun He,Zongwen Liu,Yanping Liu

{"title":"Twist-Programmable\u0000Exciton Polarization through Dual\u0000Anisotropic Proximity in CrOCl/WSe2/CrOCl Heterostructures","authors":"Yixuan Chen,Xian Zhang,Shikun Hou,Siyu Zhang,Junying Chen,Jun He,Zongwen Liu,Yanping Liu","doi":"10.1021/acsphotonics.6c01717","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01717","url":null,"abstract":"Abstract Polarization control in atomically thin semiconductors enables optical information to be encoded beyond intensity and energy. In group-VI transition metal dichalcogenides (TMDs), however, the high in-plane lattice symmetry suppresses excitonic linear polarization, and symmetry breaking from a single van der Waals interface typically provides only weak, weakly programmable anisotropy. Here we create a dual-interface anisotropic proximity platform by sandwiching monolayer WSe2 between two low-symmetry antiferromagnetic CrOCl crystals with controlled relative orientation. When the CrOCl crystallographic axes are nearly aligned, the two interfaces act cooperatively and enhance the degree of linear polarization of WSe2 excitons by a factor of 4–6 relative to single-interface structures. Rotating the CrOCl axes drives a continuous evolution from constructive enhancement to near cancellation, following a cosine-like dependence captured by a Stokes-vector superposition model. An out-of-plane magnetic field further reconfigures the anisotropy through the antiferromagnetic-to-ferrimagnetic transition of CrOCl, yielding a nonmonotonic polarization response. First-principles calculations show that the dual interface strengthens charge redistribution and amplifies W–Se bond distortion by approximately 3-fold. These results establish multi-interface anisotropy engineering as a programmable strategy for controlling exciton polarization in van der Waals semiconductors.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"22 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149210042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microscopic Understanding of V-Shaped Pits Induced Quantum Barriers and Localized-State Luminescence in High-Indium-Content InGaN/GaN Multiple-Quantum-Well LEDs 高铟InGaN/GaN多量子阱led中v形坑诱导量子势垒和局域态发光的微观理解

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-13 DOI: 10.1021/acsphotonics.6c01780

Xinye Fan,Wanggui Ye,Debao Zhang,Xuguang Cao,Sicheng Liu,Ke Yu,Zhenghao Guo,Jiqiang Ning,Hoi Wai Choi,Shijie Xu

{"title":"Microscopic Understanding of V-Shaped Pits Induced Quantum Barriers and Localized-State Luminescence in High-Indium-Content InGaN/GaN Multiple-Quantum-Well LEDs","authors":"Xinye Fan,Wanggui Ye,Debao Zhang,Xuguang Cao,Sicheng Liu,Ke Yu,Zhenghao Guo,Jiqiang Ning,Hoi Wai Choi,Shijie Xu","doi":"10.1021/acsphotonics.6c01780","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01780","url":null,"abstract":"In this study, microstructural characterization with high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), variable-temperature steady-state and time-resolved photoluminescence (PL), PL-excitation spectral measurements, and calculations based on the newly developed quantum many-body localized-state ensemble (MB-LSE) luminescence theory were systematically conducted on high-indium-content InGaN/GaN multiple-quantum-well light-emitting diodes (MQW LEDs). Based on the atomic-number Z dependence of the image contrast, an analytical expression was advocated to estimate the localized-state distribution of InGaN alloys from STEM images of typical V-shaped pits. Central energies of the localized states in the right vicinity region and the bottom MQW region of a V-shaped pit were determined to be 2.80 and 2.20 eV, respectively. Calculations of variable-temperature PL spectra and lifetimes with the MB-LSE model led to elucidation of two critical energies (∼2.886 and 2.217 eV): the central energy of overall localized-state distribution and quantum tunneling energy dominating luminescence thermal behaviors, respectively. The study thus sheds some light on the complicated luminescence mechanism of high-indium-content InGaN/GaN MQW LEDs with many V-shaped pits.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"54 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149151964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Confining Lightin Hexagonal Boron Nitride PhotonicResonators 约束光六方氮化硼光子谐振器

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-13 DOI: 10.1021/acsphotonics.6c01516

Wei Wang,Ruggero Emmanuele,Gary Wiederrecht,Oscar Avalos-Ovando,Sergio E. Ulloa,Xuedan Ma

{"title":"Confining Light\u0000in Hexagonal Boron Nitride Photonic\u0000Resonators","authors":"Wei Wang,Ruggero Emmanuele,Gary Wiederrecht,Oscar Avalos-Ovando,Sergio E. Ulloa,Xuedan Ma","doi":"10.1021/acsphotonics.6c01516","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01516","url":null,"abstract":"Abstract van der Waals (vdWs) materials have been highly regarded in optoelectronics and nanophotonics, given that they exfoliate effortlessly and offer precise control over light–matter interactions. When constructed as metasurfaces, all-dielectric vdWs are capable of hosting tailored Mie responses across the visible-NIR spectra. However, typically Mie resonances are associated with low quality factors due to the inverse correlation between refractive index and bandgap energy. Here we demonstrate the existence of quasi-bound states in the continuum (qBIC) in a square array of tapered cylindrical resonators in the vdW hexagonal boron nitride. The mode frequency and quality factor are shown to be substantially modified by introducing vertical dielectric symmetry after coating the resonator array with PMMA. Our experimental study is supported by extensive optical simulations of transmittance for different structure parameters and environments. The agreement between theory and experiment is excellent. Our results confirm the potential of using qBICs in low-index materials with controllable features.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"13 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149210043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

MechanismsGoverning Photon-Pair Generation and EmissionDirectionality in Quantum Metasurfaces 量子元表面中控制光子对产生和发射方向性的机制

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-13 DOI: 10.1021/acsphotonics.6c01607

Alberto Paniate,Ivano Ruo-Berchera,Francesco Monticone

{"title":"Mechanisms\u0000Governing Photon-Pair Generation and Emission\u0000Directionality in Quantum Metasurfaces","authors":"Alberto Paniate,Ivano Ruo-Berchera,Francesco Monticone","doi":"10.1021/acsphotonics.6c01607","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01607","url":null,"abstract":"Abstract Metasurfaces are emerging as a promising platform for photon-pair generation through spontaneous parametric down-conversion, thanks to their compactness, integrability, and intrinsic multifunctionality, which enables the engineering of complex quantum states. However, their full potential remains only partially exploited because the physical mechanisms governing the key properties of the generated photon pairs, such as generation efficiency and emission directionality, are not yet fully understood. As a result, metasurface designs and experimental configurations are often optimized through trial and error procedures. Here, we theoretically investigate the main mechanisms that control photon-pair generation and detection by studying how different pump configurations and measurement geometries affect the generation efficiency, emission directionality, and collection efficiency of emitted photon pairs. This framework allows us to interpret existing experimental results and provide general guidelines for the design of metasurfaces and the choice of experimental configurations in future experiments. Finally, we show that substrate thickness and multilayer configurations represent additional degrees of freedom for quantum metasurface design and can be engineered to enhance the generation efficiency and control the emission directionality, providing a new route for the optimization of photon-pair sources based on metasurfaces.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"13 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149210039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Molecular Controlof Light–Matter Interactionsin Plasmonic Nanogap Cavities 等离子体纳米隙腔中光-物质相互作用的分子控制

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-13 DOI: 10.1021/acsphotonics.6c01950

Benjamin P. King,Rachel E. Bangle,Hengming Li,Maiken H. Mikkelsen

{"title":"Molecular Control\u0000of Light–Matter Interactions\u0000in Plasmonic Nanogap Cavities","authors":"Benjamin P. King,Rachel E. Bangle,Hengming Li,Maiken H. Mikkelsen","doi":"10.1021/acsphotonics.6c01950","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01950","url":null,"abstract":"Abstract Plasmonic nanogap cavities enable extreme confinement of optical fields, and consequently enhanced light-matter interactions. However, light-matter coupling of molecules within these structures remains difficult to control, because the coupling strength is sensitive to the orientation of the molecular transition dipole moment relative to the cavity field. Here, we demonstrate a molecular design strategy for engineering preferential dipole alignment in nanoparticle-on-mirror plasmonic nanogap cavities. A series of ruthenium(II) polypyridyl emitters, bearing diazonium-forming surface anchoring groups at different positions on the ligands, were electrochemically grafted onto aluminum oxide-coated gold surfaces and integrated into plasmonic nanogap cavities. The binding group placement was designed to impose distinct transition dipole angles relative to the surface and, consequently, relative to the dominant cavity electric field. Photoluminescence and time-correlated single-photon counting measurements showed that cavity integration produces strong emission enhancement and large Purcell factors, with maximum Purcell enhancement increasing systematically as the estimated transition dipole moment becomes more closely aligned with the cavity field. Finite-element electromagnetic simulations reproduced the observed angular trend and demonstrated that spatial heterogeneity in the nanogap field gave rise to broad distributions of excited-state decay rates. These results establish molecular design as a practical strategy for engineering light–matter interactions and identify surface attachment chemistry as a scalable route to tuning light–matter coupling in plasmonic nanogap cavities.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"37 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149210040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrating Hyperuniform Disordered Light Trapping Layers in Ultrathin c-Si Solar Cells 超薄c-Si太阳能电池中超均匀无序光捕获层的集成

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-12 DOI: 10.1021/acsphotonics.6c01224

Alexander Lambertz,Nayeun Lee,Ali P. Vafa,Viktoryia Shautsova,Fenghao Xu,Jung-Hwan Song,Nicholas A. Güsken,Skyler Selvin,Marian Florescu,Mark L. Brongersma,Jorik van de Groep,Esther Alarcon-Llado

{"title":"Integrating Hyperuniform Disordered Light Trapping Layers in Ultrathin c-Si Solar Cells","authors":"Alexander Lambertz,Nayeun Lee,Ali P. Vafa,Viktoryia Shautsova,Fenghao Xu,Jung-Hwan Song,Nicholas A. Güsken,Skyler Selvin,Marian Florescu,Mark L. Brongersma,Jorik van de Groep,Esther Alarcon-Llado","doi":"10.1021/acsphotonics.6c01224","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01224","url":null,"abstract":"Ultrathin crystalline silicon solar cells require advanced light trapping to compensate for weak near-infrared (NIR) absorption. Here, we integrate hyperuniform disordered light-engineered (HUDLE) nanopatterns with high-quality surface passivation in 4.8 μm c Si cells and demonstrate robust device operation enabled by broadband coupling to guided modes. HUDLE layers enhance the fraction of power scattered beyond the escape cone by up to 30% in the NIR and increase average external quantum efficiency (EQE) by >50% over flat cells and 10% over periodic designs from 750 to 1000 nm. We directly compare periodic and hyperuniform nanopatterns and show that the continuous spatial frequency distribution of HUDLE leads to more homogeneous coupling of light into guided modes. Importantly, this optical enhancement is achieved without compromising open-circuit voltage or fill factor, demonstrating compatibility between advanced nanophotonics and high electronic quality in ultrathin devices. These results establish hyperuniform disorder as a powerful photonic design strategy for ultrathin silicon photovoltaics.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"238 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149151962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thin-Film Lithium Niobate Hybrid-Integrated External-Cavity Laser with 90 nm Tuning Range and 20 mA Threshold 90nm调谐范围和20ma阈值的铌酸锂薄膜混合集成外腔激光器

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-12 DOI: 10.1021/acsphotonics.6c01208

Xiongshuo Yan,Zhuping Fan,Jun Zou,Xuan Li,Jianyi Yang,Yuping Chen,Hongtao Lin

{"title":"Thin-Film Lithium Niobate Hybrid-Integrated External-Cavity Laser with 90 nm Tuning Range and 20 mA Threshold","authors":"Xiongshuo Yan,Zhuping Fan,Jun Zou,Xuan Li,Jianyi Yang,Yuping Chen,Hongtao Lin","doi":"10.1021/acsphotonics.6c01208","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01208","url":null,"abstract":"Chip-scale lasers that simultaneously offer low threshold current, wide tuning range, narrow line width, and fast chirp rate are highly desirable for optical communications, sensing, and light detection and ranging (LiDAR) systems. Thin-film lithium niobate (TFLN) external-cavity lasers have attracted considerable interest owing to their linear electro-optic effect and the resulting tunability. However, most chip-scale TFLN external-cavity lasers reported to date provide a tuning range of only 20–45 nm, which is significantly narrower than that of bulk free-space external-cavity lasers. To realize an ultrawide tuning range in a chip-scale external-cavity laser, it is essential to suppress side modes while maintaining a simple cavity architecture. Here, we demonstrate an integrated TFLN external-cavity laser that combines a broadband reflective semiconductor optical amplifier (RSOA) gain chip with a TFLN wavelength-selective reflector chip. By employing a simple double-ring external cavity and a tunable Sagnac loop reflector, the laser achieves a record 90 nm tuning range and an optimal side-mode suppression ratio of 54 dB. The low-loss TFLN external cavity, together with its fast electro-optic effect, enables a threshold current as low as 20 mA, a minimum intrinsic line width of 2.5 kHz, and a chirp rate of 1.6 × 1016 Hz/s","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"29 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149151956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Germanium–Tin (GeSn) Avalanche Photodiode with up to 2.7 μm Cutoff Wavelength for Extended SWIR Detection 锗锡（GeSn）雪崩光电二极管，截止波长高达2.7 μm，用于扩展SWIR检测

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-10 DOI: 10.1021/acsphotonics.6c00810

Quang Minh Thai,Rajesh Kumar,Justin Rudie,Xiaoxin Wang,Abdulla Said Ali,Perry C. Grant,Hryhorii Stanchu,Yunsheng Qiu,Steven Akwabli,Chun-Chieh Chang,Jifeng Liu,Baohua Li,Wei Du,Shui-Qing Yu

{"title":"Germanium–Tin (GeSn) Avalanche Photodiode with up to 2.7 μm Cutoff Wavelength for Extended SWIR Detection","authors":"Quang Minh Thai,Rajesh Kumar,Justin Rudie,Xiaoxin Wang,Abdulla Said Ali,Perry C. Grant,Hryhorii Stanchu,Yunsheng Qiu,Steven Akwabli,Chun-Chieh Chang,Jifeng Liu,Baohua Li,Wei Du,Shui-Qing Yu","doi":"10.1021/acsphotonics.6c00810","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c00810","url":null,"abstract":"Separate absorption-charge multiplication (SACM) germanium–tin on silicon (GeSn on Si) avalanche photodiode (APD) offers a viable solution to achieve CMOS-compatible detection technology in short-wave infrared (SWIR)/extended SWIR (e-SWIR) range, leveraging the low k-factor of Si multiplication layer and SWIR/e-SWIR band absorption of GeSn. However, unlike the well-established growth of GeSn on Si with thick Ge buffer in between to reduce threading dislocation density due to lattice mismatch, GeSn on Si APD design requires relatively thin Ge buffer to limit electric field drop through the background p-doped buffer and efficiently transport photocarriers from the GeSn absorber to Si multiplication layer, therefore making the growth of high-Sn content APD for e-SWIR coverage very challenging. In this work, we experimentally demonstrate GeSn on Si APD up to 12.7% Sn, monolithically grown on Si substrate with 122 nm thick Ge buffer in between, which is considerably thinner than the widely used 700–900 nm thick Ge buffer. Stronger relaxation of GeSn absorber via thin Ge buffer favors Sn incorporation, leading to higher Sn content than the nominal target of 8% Sn. Device detection range is significantly improved compared to previous works─with the cutoff wavelength increased up to 2.7 μm at 300 K─in parallel with good responsivity in the SWIR/e-SWIR range, up to 1.45 A W–1 at 1.55 μm and 0.66 A W–1 at 2 μm at 77 K, corresponding to the lowest estimation of avalanche gain of 5.8 and 3 calculated based on the maximum primary responsivity. The validity of avalanche gain calculation using punch-through bias will be discussed for the case of partial depletion in the GeSn absorber.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"12 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149151960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inverse-DesignedPhotonic Interfaces beyond EigenmodeExpansion Limits 超越本征模扩展极限的反设计光子界面

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-09 DOI: 10.1021/acsphotonics.6c00326

Chengfei Shang,Zhaoxi Chen,Yifan Wu,Hanke Feng,Cheng Wang

{"title":"Inverse-Designed\u0000Photonic Interfaces beyond Eigenmode\u0000Expansion Limits","authors":"Chengfei Shang,Zhaoxi Chen,Yifan Wu,Hanke Feng,Cheng Wang","doi":"10.1021/acsphotonics.6c00326","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c00326","url":null,"abstract":"Abstract Photonic integrated circuits (PICs) enable optical systems with dramatically increased performance, cost-effectiveness, and scalability through enhanced light-matter interactions, high-density integration, and mass production. Due to the significant mode mismatch between various integrated photonic platforms and optical fibers, spot-size conversion interfaces with low loss, compact footprint, and high manufacturability are essential. Conventional spot-size converters based on intuitive designs often require multilayer tapering structures and tiny waveguide tips to adiabatically expand the eigenmodes. These rigid design constraints commonly lead to large device footprints and require multiple high-precision lithography steps. In this paper, we overcome these limitations using inverse design methods, which optimize the coupling efficiency over a large parameter space beyond traditional eigenmode evolution limits. Specifically, we demonstrate efficient and ultracompact photonic interfaces on the thin-film lithium niobate (TFLN) platform, where partially etched rib waveguides and nonvertical sidewalls have previously hindered the achievement of low-loss waveguide tapers in single-layer configurations. Our inverse-designed photonic structures achieve simulated and experimentally measured coupling efficiencies as low as 1 and 3 dB per facet, respectively, between TFLN waveguides and lensed/ultrahigh-numerical-aperture (UHNA) fiber, with broad 1-dB bandwidths exceeding 120 nm. The inverse-designed interfaces are highly compatible with standard TFLN PIC components and require only a single high-resolution lithography step. More importantly, the design concept transcends traditional eigenmode evolution theories and is broadly applicable to a variety of material platforms and application scenarios.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"157 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149150895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0