ACS Photonics最新文献_第10页

Attosecond Pulses from a Solid Driven by a Synthesized Two-Color Field at Megahertz Repetition Rate 以兆赫兹重复频率合成双色场驱动固体的阿秒脉冲

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2025-04-25 DOI: 10.1021/acsphotonics.5c00410

Zhaopin Chen, Mark Levit, Yuval Kern, Basabendra Roy, Adi Goldner, Michael Krüger

{"title":"Attosecond Pulses from a Solid Driven by a Synthesized Two-Color Field at Megahertz Repetition Rate","authors":"Zhaopin Chen, Mark Levit, Yuval Kern, Basabendra Roy, Adi Goldner, Michael Krüger","doi":"10.1021/acsphotonics.5c00410","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c00410","url":null,"abstract":"Probing coherent quantum dynamics in light–matter interactions at the microscopic level requires high-repetition-rate isolated attosecond pulses (IAPs) in pump–probe experiments. To date, the generation of IAPs has been mainly limited to the kilohertz regime. In this work, we experimentally achieve attosecond control of extreme-ultraviolet (XUV) high harmonics in the wide-bandgap dielectric MgO, driven by a synthesized field of two femtosecond pulses at 800 and 2000 nm with relative phase stability. The resulting quasi-continuous harmonic plateau with ∼9 eV spectral width centered around 16.5 eV photon energy can be tuned by the two-color phase and supports the generation of an IAP (∼700 attoseconds), confirmed by numerical simulations based on the three-band semiconductor Bloch equations. Leveraging the high-repetition-rate driver laser, the moderate intensity requirements of solid-state high-harmonic generation, and band-structure-induced spectral enhancement, we achieve IAP production at an unprecedented megahertz repetition rate, paving the way for compact all-solid-state XUV sources for IAP generation.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"53 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143875905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental Demonstration of Conjugate Structured Illumination Microscopy (c-SIM) for Sensing Deep Subwavelength Perturbations in Background Nanopatterns 共轭结构照明显微镜（c-SIM）用于检测背景纳米图案中深亚波长扰动的实验演示

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2025-04-24 DOI: 10.1021/acsphotonics.5c00227

Jinsong Zhang, Renjie Zhou, Nicholas X. Fang, Weijie Deng, Jinlong Zhu, Shiyuan Liu

{"title":"Experimental Demonstration of Conjugate Structured Illumination Microscopy (c-SIM) for Sensing Deep Subwavelength Perturbations in Background Nanopatterns","authors":"Jinsong Zhang, Renjie Zhou, Nicholas X. Fang, Weijie Deng, Jinlong Zhu, Shiyuan Liu","doi":"10.1021/acsphotonics.5c00227","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c00227","url":null,"abstract":"The localization and classification of deep-subwavelength objects embedded in dense background nanopatterns in an imaging mode are challenging because of the optical diffraction limit and the weak signal-to-noise ratio and contrast. In this work, we, for the first time, experimentally validated the proposed conjugate structured illumination microscopy (c-SIM), which utilizes optical proximity correction techniques to generate a wide-field, diffraction-limited, and structured illumination field on the sample surface for defect inspection. Our experiments validated that c-SIM could accurately inspect 29 nm wide defects with an enhanced resolution (half of the diffraction barrier) using a 423 nm laser source. Moreover, our investigation demonstrated that different types of 38 nm wide defects could be precisely pinpointed and directly classified from the captured frames in the lateral scanning process, which is attributed to the fact that a conjugate structured light field could induce a high-intensity gradient in the illumination light. This technology may find diverse applications, such as a patterned wafer defect inspection, photomask inspection, material characterization, metamaterial inspection, and nanosensing.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"2 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143866690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental Demonstration of Conjugate Structured Illumination Microscopy (c-SIM) for Sensing Deep Subwavelength Perturbations in Background Nanopatterns 共轭结构照明显微镜（c-SIM）用于检测背景纳米图案中深亚波长扰动的实验演示

IF 6.5 1区物理与天体物理

ACS Photonics Pub Date : 2025-04-24 DOI: 10.1021/acsphotonics.5c0022710.1021/acsphotonics.5c00227

Jinsong Zhang, Renjie Zhou, Nicholas X. Fang, Weijie Deng, Jinlong Zhu* and Shiyuan Liu*,

{"title":"Experimental Demonstration of Conjugate Structured Illumination Microscopy (c-SIM) for Sensing Deep Subwavelength Perturbations in Background Nanopatterns","authors":"Jinsong Zhang, Renjie Zhou, Nicholas X. Fang, Weijie Deng, Jinlong Zhu* and Shiyuan Liu*, ","doi":"10.1021/acsphotonics.5c0022710.1021/acsphotonics.5c00227","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c00227https://doi.org/10.1021/acsphotonics.5c00227","url":null,"abstract":"The localization and classification of deep-subwavelength objects embedded in dense background nanopatterns in an imaging mode are challenging because of the optical diffraction limit and the weak signal-to-noise ratio and contrast. In this work, we, for the first time, experimentally validated the proposed conjugate structured illumination microscopy (c-SIM), which utilizes optical proximity correction techniques to generate a wide-field, diffraction-limited, and structured illumination field on the sample surface for defect inspection. Our experiments validated that c-SIM could accurately inspect 29 nm wide defects with an enhanced resolution (half of the diffraction barrier) using a 423 nm laser source. Moreover, our investigation demonstrated that different types of 38 nm wide defects could be precisely pinpointed and directly classified from the captured frames in the lateral scanning process, which is attributed to the fact that a conjugate structured light field could induce a high-intensity gradient in the illumination light. This technology may find diverse applications, such as a patterned wafer defect inspection, photomask inspection, material characterization, metamaterial inspection, and nanosensing.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"12 5","pages":"2710–2719 2710–2719"},"PeriodicalIF":6.5,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144098137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fully Suspended MoS2 Photodetectors toward High Response Speed and Stable Responsivity 面向高响应速度和稳定响应的全悬浮MoS2光电探测器

IF 6.5 1区物理与天体物理

ACS Photonics Pub Date : 2025-04-24 DOI: 10.1021/acsphotonics.5c0014610.1021/acsphotonics.5c00146

Jianyong Wei, Zhentao Lian, Yumeng Liu, Maosong Xie, Yueyang Jia, Kai Li, Robert Kudrawiec, Yaping Dan* and Rui Yang*,

{"title":"Fully Suspended MoS2 Photodetectors toward High Response Speed and Stable Responsivity","authors":"Jianyong Wei, Zhentao Lian, Yumeng Liu, Maosong Xie, Yueyang Jia, Kai Li, Robert Kudrawiec, Yaping Dan* and Rui Yang*, ","doi":"10.1021/acsphotonics.5c0014610.1021/acsphotonics.5c00146","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c00146https://doi.org/10.1021/acsphotonics.5c00146","url":null,"abstract":"High photoresponsivity has been achieved in photodetectors based on two-dimensional (2D) semiconductors, but they usually suffer from low response speed and severe responsivity decay with higher light intensity due to substrate effects. In this work, photodetectors with high response speed and stable responsivity are prepared based on fully suspended MoS2. Due to the complete separation of the suspended MoS2 channel and the Si substrate underneath, the photogating effect is effectively suppressed. Then the photocurrent rise and fall times are measured as 68.6 and 100.0 μs by transient photocurrent measurement, respectively, which are about 105 times faster than the nonsuspended devices. Moreover, they exhibit stable responsivity with time within a large range of light intensity. A detailed analysis of the photoresponse mechanisms is performed by comparing the photoresponses from devices with different structures. The results provide a fundamental understanding of photoresponse mechanisms and guide the design of high-performance 2D photodetectors.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"12 5","pages":"2656–2663 2656–2663"},"PeriodicalIF":6.5,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144098138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Efficiency All-Solution-Processed Inverted Quantum-Dot Light-Emitting Diodes 高效全溶液处理倒置量子点发光二极管

IF 6.5 1区物理与天体物理

ACS Photonics Pub Date : 2025-04-24 DOI: 10.1021/acsphotonics.4c0193710.1021/acsphotonics.4c01937

Yongqiang Peng, Mian Wei*, Yiting Liu, Lei Wang, Binbin Hu* and Huaibin Shen,

{"title":"High Efficiency All-Solution-Processed Inverted Quantum-Dot Light-Emitting Diodes","authors":"Yongqiang Peng, Mian Wei*, Yiting Liu, Lei Wang, Binbin Hu* and Huaibin Shen, ","doi":"10.1021/acsphotonics.4c0193710.1021/acsphotonics.4c01937","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01937https://doi.org/10.1021/acsphotonics.4c01937","url":null,"abstract":"Inverted quantum dot (QD) light-emitting diodes (QLEDs) offer a cost-effective solution for active matrix-driven displays. However, solvent erosion compromises the structural integrity of the QD emission layer (EML) and introduces interfacial defects, leading to significant degradation in the light emission and charge-injection efficiency of fully solution-processed inverted QLED devices. In this study, this issue was addressed by introducing a polyethylenimine (PEIE) layer between the hole transport layer (HTL) and the EML. The PEIE layer effectively prevents solvent-induced damage to the underlying QD layer and reduces leakage current by decreased interfacial defects, thereby enhancing effective charge-injection and improving device efficiency. Furthermore, the combination of poly [bis(4-phenyl)(4-butylphenyl)amine] (Poly-TPD) and phosphomolybdic acid hydrate (PMAH) as transport layers substantially enhances the brightness and efficiency of the device. As a result, the optimized inverted QLEDs achieved a record external quantum efficiency (EQE) of approximately 23.2%, a current efficiency (CE) of 41.2 cd A–1, and well-controlled efficiency roll-off. The study systematically explored the impact of different interlayer materials and their positions on device performance, highlighting the importance of interface engineering in optimizing charge-injection and transport.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"12 5","pages":"2406–2412 2406–2412"},"PeriodicalIF":6.5,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144098140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fully Suspended MoS2 Photodetectors toward High Response Speed and Stable Responsivity 面向高响应速度和稳定响应的全悬浮MoS2光电探测器

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2025-04-24 DOI: 10.1021/acsphotonics.5c00146

Jianyong Wei, Zhentao Lian, Yumeng Liu, Maosong Xie, Yueyang Jia, Kai Li, Robert Kudrawiec, Yaping Dan, Rui Yang

{"title":"Fully Suspended MoS2 Photodetectors toward High Response Speed and Stable Responsivity","authors":"Jianyong Wei, Zhentao Lian, Yumeng Liu, Maosong Xie, Yueyang Jia, Kai Li, Robert Kudrawiec, Yaping Dan, Rui Yang","doi":"10.1021/acsphotonics.5c00146","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c00146","url":null,"abstract":"High photoresponsivity has been achieved in photodetectors based on two-dimensional (2D) semiconductors, but they usually suffer from low response speed and severe responsivity decay with higher light intensity due to substrate effects. In this work, photodetectors with high response speed and stable responsivity are prepared based on fully suspended MoS2. Due to the complete separation of the suspended MoS2 channel and the Si substrate underneath, the photogating effect is effectively suppressed. Then the photocurrent rise and fall times are measured as 68.6 and 100.0 μs by transient photocurrent measurement, respectively, which are about 105 times faster than the nonsuspended devices. Moreover, they exhibit stable responsivity with time within a large range of light intensity. A detailed analysis of the photoresponse mechanisms is performed by comparing the photoresponses from devices with different structures. The results provide a fundamental understanding of photoresponse mechanisms and guide the design of high-performance 2D photodetectors.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"260 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143866749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Efficiency All-Solution-Processed Inverted Quantum-Dot Light-Emitting Diodes 高效全溶液处理倒置量子点发光二极管

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2025-04-24 DOI: 10.1021/acsphotonics.4c01937

Yongqiang Peng, Mian Wei, Yiting Liu, Lei Wang, Binbin Hu, Huaibin Shen

{"title":"High Efficiency All-Solution-Processed Inverted Quantum-Dot Light-Emitting Diodes","authors":"Yongqiang Peng, Mian Wei, Yiting Liu, Lei Wang, Binbin Hu, Huaibin Shen","doi":"10.1021/acsphotonics.4c01937","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01937","url":null,"abstract":"Inverted quantum dot (QD) light-emitting diodes (QLEDs) offer a cost-effective solution for active matrix-driven displays. However, solvent erosion compromises the structural integrity of the QD emission layer (EML) and introduces interfacial defects, leading to significant degradation in the light emission and charge-injection efficiency of fully solution-processed inverted QLED devices. In this study, this issue was addressed by introducing a polyethylenimine (PEIE) layer between the hole transport layer (HTL) and the EML. The PEIE layer effectively prevents solvent-induced damage to the underlying QD layer and reduces leakage current by decreased interfacial defects, thereby enhancing effective charge-injection and improving device efficiency. Furthermore, the combination of poly [bis(4-phenyl)(4-butylphenyl)amine] (Poly-TPD) and phosphomolybdic acid hydrate (PMAH) as transport layers substantially enhances the brightness and efficiency of the device. As a result, the optimized inverted QLEDs achieved a record external quantum efficiency (EQE) of approximately 23.2%, a current efficiency (CE) of 41.2 cd A–1, and well-controlled efficiency roll-off. The study systematically explored the impact of different interlayer materials and their positions on device performance, highlighting the importance of interface engineering in optimizing charge-injection and transport.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"48 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143872540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum Dots Short-Wave Infrared Image Sensor with Enhanced Photoresponse Enabled by a Planar p–n Homojunction 平面p-n同质结增强光响应的量子点短波红外图像传感器

IF 6.5 1区物理与天体物理

ACS Photonics Pub Date : 2025-04-23 DOI: 10.1021/acsphotonics.5c0023110.1021/acsphotonics.5c00231

Yan Wang, Jieyu Zhang, Yingjie Tang, Yitong Chen, Dingwei Li, Huihui Ren, Fanfan Li, Guolei Liu, Qi Huang, Botao Ji* and Bowen Zhu*,

{"title":"Quantum Dots Short-Wave Infrared Image Sensor with Enhanced Photoresponse Enabled by a Planar p–n Homojunction","authors":"Yan Wang, Jieyu Zhang, Yingjie Tang, Yitong Chen, Dingwei Li, Huihui Ren, Fanfan Li, Guolei Liu, Qi Huang, Botao Ji* and Bowen Zhu*, ","doi":"10.1021/acsphotonics.5c0023110.1021/acsphotonics.5c00231","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c00231https://doi.org/10.1021/acsphotonics.5c00231","url":null,"abstract":"Quantum dots (QDs)-based photodetectors are promising alternatives to construct short-wave infrared (SWIR) image sensors at a low cost. Improving the photoresponse and scalability of QDs is important to enable their practical applications. In this work, we developed a complementary metal–oxide–semiconductor (CMOS)-compatible SWIR image sensor based on lead sulfide (PbS) quantum dots (QDs) utilizing a p–n homojunction photoconductor (PC) architecture. Through solution-phase ligand-exchanged PbS QDs treated by lead iodide (PbI2) combined with a solid-state ligand-exchanged PbS QDs thin film treated with ethanedithiol (EDT), a p–n homojunction was constructed, enabling more efficient separation of photogenerated carriers and significantly enhancing the photoresponse. This approach allows for the monolithic integration of solution-processed QDs with silicon readout integrated circuits (ROICs), eliminating the need for complex flip-chip bonding and facilitating the fabrication of large-scale (640 × 512) QDs imagers. Consequently, the homojunction-based QDs SWIR imager delivers performance with low noise and a high average detectivity of 1.7 × 1010 Jones, and the capability to capture high-resolution SWIR images highlights its potential for diverse applications.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"12 5","pages":"2701–2709 2701–2709"},"PeriodicalIF":6.5,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144098136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum Dots Short-Wave Infrared Image Sensor with Enhanced Photoresponse Enabled by a Planar p–n Homojunction 平面p-n同质结增强光响应的量子点短波红外图像传感器

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2025-04-23 DOI: 10.1021/acsphotonics.5c00231

Yan Wang, Jieyu Zhang, Yingjie Tang, Yitong Chen, Dingwei Li, Huihui Ren, Fanfan Li, Guolei Liu, Qi Huang, Botao Ji, Bowen Zhu

{"title":"Quantum Dots Short-Wave Infrared Image Sensor with Enhanced Photoresponse Enabled by a Planar p–n Homojunction","authors":"Yan Wang, Jieyu Zhang, Yingjie Tang, Yitong Chen, Dingwei Li, Huihui Ren, Fanfan Li, Guolei Liu, Qi Huang, Botao Ji, Bowen Zhu","doi":"10.1021/acsphotonics.5c00231","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c00231","url":null,"abstract":"Quantum dots (QDs)-based photodetectors are promising alternatives to construct short-wave infrared (SWIR) image sensors at a low cost. Improving the photoresponse and scalability of QDs is important to enable their practical applications. In this work, we developed a complementary metal–oxide–semiconductor (CMOS)-compatible SWIR image sensor based on lead sulfide (PbS) quantum dots (QDs) utilizing a p–n homojunction photoconductor (PC) architecture. Through solution-phase ligand-exchanged PbS QDs treated by lead iodide (PbI2) combined with a solid-state ligand-exchanged PbS QDs thin film treated with ethanedithiol (EDT), a p–n homojunction was constructed, enabling more efficient separation of photogenerated carriers and significantly enhancing the photoresponse. This approach allows for the monolithic integration of solution-processed QDs with silicon readout integrated circuits (ROICs), eliminating the need for complex flip-chip bonding and facilitating the fabrication of large-scale (640 × 512) QDs imagers. Consequently, the homojunction-based QDs SWIR imager delivers performance with low noise and a high average detectivity of 1.7 × 1010 Jones, and the capability to capture high-resolution SWIR images highlights its potential for diverse applications.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"5 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143866287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Single-Photon Detectors on Arbitrary Photonic Substrates 任意光子基底上的单光子探测器

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2025-04-22 DOI: 10.1021/acsphotonics.5c00345

Max Tao, Hugo Larocque, Samuel Gyger, Marco Colangelo, Owen Medeiros, Ian Christen, Hamed Sattari, Gregory Choong, Yves Petremand, Ivan Prieto, Yang Yu, Stephan Steinhauer, Gerald L. Leake, Daniel J. Coleman, Amir H. Ghadimi, Michael L. Fanto, Val Zwiller, Dirk Englund, Carlos Errando-Herranz

{"title":"Single-Photon Detectors on Arbitrary Photonic Substrates","authors":"Max Tao, Hugo Larocque, Samuel Gyger, Marco Colangelo, Owen Medeiros, Ian Christen, Hamed Sattari, Gregory Choong, Yves Petremand, Ivan Prieto, Yang Yu, Stephan Steinhauer, Gerald L. Leake, Daniel J. Coleman, Amir H. Ghadimi, Michael L. Fanto, Val Zwiller, Dirk Englund, Carlos Errando-Herranz","doi":"10.1021/acsphotonics.5c00345","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c00345","url":null,"abstract":"Detecting nonclassical light is a central requirement for photonics-based quantum technologies. Unrivaled high efficiencies and low dark counts have positioned superconducting nanowire single-photon detectors (SNSPDs) as the leading detector technology for integrated photonic applications. However, a central challenge lies in their integration within photonic integrated circuits, regardless of material platform or surface topography. Here, we introduce a method based on transfer printing that overcomes these constraints and allows for the integration of SNSPDs onto arbitrary photonic substrates. With a kinetically controlled elastomer stamp, we transfer suspended SNSPDs onto commercially manufactured silicon and lithium niobate on insulator integrated photonic circuits. Focused ion beam metal deposition then wires the detectors to the circuits, thereby allowing us to monitor photon counts with >7% detection efficiencies. Our method eliminates detector integration bottlenecks and provides new venues for versatile, accessible, and scalable quantum information processors.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"52 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143857390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0