ACS Photonics最新文献

{"title":"Infrared Illumination-Induced Responsivity Enhancement in Photoelectric Tunable-Step Terahertz Detectors","authors":"Ran Chen,&nbsp;Matthew Tan,&nbsp;Harvey E. Beere,&nbsp;Jonathan P. Griffiths,&nbsp;David A. Ritchie,&nbsp;Wladislaw Michailow","doi":"10.1021/acsphotonics.6c01501","DOIUrl":"10.1021/acsphotonics.6c01501","url":null,"abstract":"<p>Quantum phenomena in two-dimensional electron gases (2DEGs)providenew opportunities for high-responsivity far-infrared detection. Aprime example is photoelectric tunable-step (PETS) terahertz (THz)detectors, which use the in-plane photoelectric (IPPE) effect as asensitive photonic detection mechanism. Here, we show that the terahertzsensitivity of this quantum photodetection mechanism can be dynamicallytuned by using infrared illumination. We leverage the persistent photoconductivity(PPC) effect in AlGaAs/GaAs-based heterostructures to tune the deviceperformance by adjusting the electron density and mobility of thechannel. Our approach enables optimization of the responsivity fordifferent operating modes and dynamic control over the output impedanceof PETS terahertz detectors of approximately one order of magnitude.We provide an explanation for the underlying physics that advancesthe understanding of quantum photodetection phenomena in 2DEGs. Ourfindings pave the way to in situ tunable optoelectronics combiningconcepts from the infrared and terahertz spectral regions.</p>","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"13 19","pages":"5749–5760"},"PeriodicalIF":6.0,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148895041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Semimetal-Interlayer-Engineered MoSe2/1T′-MoTe2/WSe2 Heterostructure for Reconfigurable Rectification and Broadband Multifunctional Photodetection","authors":"Shuang Liu,&nbsp;Yifan Ding,&nbsp;Yaru Shi,&nbsp;Chong Ma,&nbsp;Tianyan Yu,&nbsp;Shaojuan Li,&nbsp;Xiangchao Zhang,&nbsp;Yuxiang Zheng,&nbsp;Rongjun Zhang","doi":"10.1021/acsphotonics.6c01599","DOIUrl":"10.1021/acsphotonics.6c01599","url":null,"abstract":"<p>Photodetectors based on two-dimensional(2D) van derWaals heterostructureshave attracted considerable interest owing to their tunable electronicstructures and efficient photoelectric conversion. However, simultaneouslyachieving low dark current, high photoresponse, and electrically reconfigurablecarrier transport within a simple device architecture remains challenging.Here, we report a P-Semimetal-N (PSN) van der Waals heterostructurephotodetector based on MoSe₂/1T′-MoTe₂/WSe₂, in which the semimetallic 1T′-MoTe₂ interlayer introduces multiple transport interfaces that enableflexible gate modulation while facilitating efficient photocarriertransport. Benefiting from the unique configuration, the device exhibitsa rectification ratio and light-to-dark current ratio exceeding 10⁴, together with a picoampere-level reverse dark current. Itfurther demonstrates broadband photodetection from 220 to 1310 nmand self-powered operation at zero bias. Under 475 nm illumination,a responsivity of 2.38 A/W, a specific detectivity of 8.49 ×10¹¹ Jones, and an external quantum efficiency of 621%are achieved at 0 V. More importantly, reversible rectification switchingis realized through gate-voltage modulation, enabling continuous tuningof the rectification ratio from 10^–2 to 10⁶. Leveraging the synergy of broadband photoresponse and reconfigurablecarrier transport, the device enables self-powered imaging, encodedoptical communication, and optoelectronic logic operations. This workprovides a viable strategy for multifunctional and programmable 2Doptoelectronic systems.</p>","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"13 19","pages":"5813–5825"},"PeriodicalIF":6.0,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149019622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Collective\u0000Effect of Color-Centers on Chiroptical\u0000Response of Carbon Nanotubes","authors":"Grace Tiffany,Braden M. Weight,Brendan J. Gifford,Amara Arshad,Aaron Forde,Dmitri Kilin,Svetlana Kilina,Sergei Tretiak","doi":"10.1021/acsphotonics.6c01375","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01375","url":null,"abstract":"Abstract The incorporation of color centers into carbon nanotubes (CNTs) offers a promising strategy to modulate their optical activity, particularly by tuning emission energies and enhancing photoluminescence efficiency. Here, our computational study aims to investigate the effects of covalent defect ensembles on the chiroptical response of CNTs. Our results suggest that the collective behavior of defects leads to emergent chiroptical effects that go beyond simple additive contributions. The spatial distribution, helicity, density, and symmetry-breaking characteristics of the defect configurations can cooperatively amplify (or in some cases suppress) circular dichroism and optical rotation. These trends may be rationalized by analyzing interactions between multiple color centers that may induce specific delocalized chiral exciton states or modify selection rules, resulting in tunable chiroptical signals. Understanding these collective effects is essential for designing CNT-based chiral optoelectronic and quantum devices and for spectroscopically probing symmetry-breaking phenomena at the nanoscale.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"5 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149092340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"PSF-Driven Spatiotemporal Blending in Fluorescence Lifetime Imaging Microscopy and Its Mitigation via Mean-Shift Super-Resolution-Based Masking","authors":"Mario González-Gutiérrez,&nbsp;Diana M. Vázquez-Enciso,&nbsp;Nicolás Mateos,&nbsp;Wonsang Hwang,&nbsp;Esley Torres-García,&nbsp;Haydee O. Hernández,&nbsp;Jenu V. Chacko,&nbsp;Iván Coto Hernández,&nbsp;Pablo Loza-Álvarez,&nbsp;Christopher Wood,&nbsp;Adan Guerrero","doi":"10.1021/acsphotonics.6c00741","DOIUrl":"10.1021/acsphotonics.6c00741","url":null,"abstract":"<p>Fluorescence lifetime imaging microscopy (FLIM) enablesquantitativemapping of molecular environments in living systems with high biochemicalspecificity. However, spatial overlap dictated by the diffraction-limitedpoint spread function (PSF) causes a mixing of temporal signals: photonsfrom neighboring emitters collected within the same pixel yield compositedecay profiles, generating apparent intermediate lifetimes that canbe mistaken for variations in the local molecular environment. Weintroduce a workflow that applies mean-shift super-resolution (MSSR)to raw intensity data to generate intensity-derived spatial masksprior to phasor-based lifetime analysis. The method is computationallyefficient and preserves decay kinetics because it operates on intensity-derivedspatial information rather than modifying temporal data. In U2OS cellslabeled with spectrally-overlapping fluorophores, phasor analysisreveals an intermediate lifetime population localized at PSF-overlapinterfaces, consistent with optical mixing rather than intrinsic lifetimeheterogeneity. MSSR-derived masking suppressed this mixed populationwhile preserving the distribution of similar phasor coordinates inthe phasor plane for each fluorophore. Simulations of strictly monoexponentialfluorescence decay emitters further show that blended lifetime decayprofiles are present at separations up to 4σ, indicating thatconventional spatial resolution criteria can underestimate lifetimecross-talk. Application of this workflow to three-component FLIM showedalso a reduced overlap of pixel distributions in phasor plots whilemaintaining distinct lifetime signatures. Ultimately, the primaryvalue of MSSR-based spatial refinement lies in leveraging improvedspatial resolution to effectively isolate the temporal profiles ofmixed fluorophore populations preserving the integrity of FLIM measurements.</p>","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"13 19","pages":"5571–5590"},"PeriodicalIF":6.0,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148973626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction to “Deep Learning-Enabled On-Demand Inverse Design of Daytime Radiative Coolers with Dual-Polarization Color Control”","authors":"Harit Keawmuang,&nbsp;Xiaotong Li,&nbsp;Shiqi Hu,&nbsp;Yeseul Kim,&nbsp;Junkyeong Park,&nbsp;Le Dai,&nbsp;Trevon Badloe,&nbsp;Junsuk Rho","doi":"10.1021/acsphotonics.6c02186","DOIUrl":"10.1021/acsphotonics.6c02186","url":null,"abstract":"","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"13 19","pages":"5989–5989"},"PeriodicalIF":6.0,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148973627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bragg-Enhanced Time-Domain Brillouin Scattering from a Propagating Acoustic Grating","authors":"Olga S. Ken,&nbsp;Dmytro O. Horiachyi,&nbsp;Vladimir L. Korenev,&nbsp;Artur V. Trifonov,&nbsp;Ilya A. Akimov,&nbsp;Dmitri R. Yakovlev,&nbsp;Manfred Bayer","doi":"10.1021/acsphotonics.6c01370","DOIUrl":"10.1021/acsphotonics.6c01370","url":null,"abstract":"<p>Generation and detection of coherentphonons in semiconductorsby femtosecond optical pulses is a powerful tool for high-frequencyacoustic control of their electronic properties. Here, we demonstratea propagating one-dimensional acoustic grating in bulk semiconductorsusing above-band-gap excitation by a train of laser pulses with ahigh repetition rate of 1 GHz. This approach enables shaping the coherentacoustic phonon spectrum and leads to a significant enhancement ofBrillouin light scattering at selected probe wavelengths in a pump–probeconfiguration. We demonstrate this effect at a cryogenic temperatureof 5 K in prototypical semiconductor systems, namely bulk crystallineGaAs and (Cd,Zn)Te, which serve as benchmark materials for the proposedmethod. The spectral dependence of the time-domain Brillouin lightscattering amplitude exhibits resonant peaks at discrete probe wavelengthsarising from Bragg reflection of the probe light by the propagatingacoustic grating. A 10–30-fold resonant enhancement of thesignal amplitude is observed for GaAs and (Cd,Zn)Te, and is determinedby the finite spectral width of the probe pulse. With further spectralnarrowing, enhancements of the order ∼100–150 are expected,set by the number <em>N</em> of strain pulses in the acousticgrating within the sample, and ultimately limited by the materialparameters and sample thickness.</p>","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"13 19","pages":"5685–5692"},"PeriodicalIF":6.0,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148973628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Endurance, Low-Loss Sb2Se3 Optical Switches on Silicon Nitride Using Transparent Conductive Heaters","authors":"Xingshi Yu,&nbsp;Ipsita Chakraborty,&nbsp;Isaac Johnson,&nbsp;Savvas I. Raptis,&nbsp;Qianbin Luo,&nbsp;Hao Liu,&nbsp;Thalia D. Bucio,&nbsp;Elliot Sandell,&nbsp;Christos Vagionas,&nbsp;Amalia Miliou,&nbsp;Periklis Petropoulos,&nbsp;Nikos Pleros,&nbsp;Ioannis Zeimpekis,&nbsp;Frederic Gardes","doi":"10.1021/acsphotonics.6c01756","DOIUrl":"10.1021/acsphotonics.6c01756","url":null,"abstract":"<p>We report an electrically actuated, low-loss nonvolatileopticalswitch based on the phase-change material (PCM) Sb₂Se₃ integrated on a silicon nitride (Si₃N₄) platform. The device is fabricated using an 8-in. Wafer-scale processflow, demonstrating the feasibility of scalable manufacturing forphotonic integrated circuits (PICs). By employing adaptive voltageand transparent indium tin oxide (ITO) microheaters, reversible switchingbetween the amorphous and crystalline states is achieved with an enduranceexceeding 140 million switching cycles, establishing a new benchmarkfor nonvolatile integrated photonic memory and reconfigurable architectures.Furthermore, multilevel operation beyond 6 bits can be repeatablydemonstrated by pulse-count-dependent gradual crystallization, enablingprecise control of the optical phase. These results highlight a scalableand energy-efficient platform for high-density programmable and nonvolatilephotonic integrated systems.</p>","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"13 19","pages":"5894–5904"},"PeriodicalIF":6.0,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149049545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain-Decoupled\u0000Flexible InAs CQD SWIR Imager for\u0000Through-Silicon Photovoltaic Inspection","authors":"Youcef A. Bioud,Ali Alrashoudi,Dhay AlBeladi,Tariq Sheikh,Sawsan A. Daws,Kseniia Kosolapova,Valentina-Elena Musteata,Mutalifu Abulikemu,Omar F. Mohammed,Osman M. Bakr","doi":"10.1021/acsphotonics.6c01889","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01889","url":null,"abstract":"Abstract Artificial vision systems for photovoltaic (PV) inspection require lightweight, mechanically compliant infrared imagers capable of resolving buried defects nondestructively. Yet short-wave infrared (SWIR) technologies remain dominated by rigid epitaxial semiconductors, while flexible thin-film alternatives are limited by the fragility of the photoactive layer. Here we report a flexible SWIR imager based on InAs/ZnSe colloidal quantum dots (CQDs) for through-silicon PV inspection, enabled by a strain-decoupled architecture. Soft lift-off lithography patterns the CQD active layer into an island–bridge layout that relieves mechanically induced stress. The imager exhibits micrometer-scale pattern fidelity, good pixel uniformity, an average dark current of 10–6 mA per pixel, and an average external quantum efficiency (EQE) of ∼14%. It maintains stable operation under repeated bending and twisting, with only ∼6% modulation transfer function (MTF) degradation after severe mechanical deformation. Under eye-safe 1550 nm illumination, the device enables through-silicon imaging with a signal-to-noise ratio (SNR) of ∼9 and resolves distinct PV cell components with clear contrast. These results establish flexible heavy-metal-free CQD imagers as a viable route toward compact artificial vision platforms for through-silicon, nondestructive PV diagnostics.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"22 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149091268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of\u0000Photonic Crystal Size and Lattice Constant\u0000on the Lasing Performance of UV-C PCSELs","authors":"Doğukan Apaydın,Lars Persson,Moritz Riedel,Sarina Graupeter,Joachim Ciers,Tim Wernicke,Michael Kneissl,Ulrich Theodor Schwarz,Åsa Haglund","doi":"10.1021/acsphotonics.6c01610","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01610","url":null,"abstract":"Abstract Semiconductor lasers are compact, high-power coherent light sources across a broad wavelength range in the electromagnetic spectrum, including visible and infrared. Despite significant progress, they have yet to achieve the same performance for ultraviolet-C (UV-C) wavelengths (λ0 &amp;lt; 280 nm). Photonic crystal surface-emitting lasers (PCSELs) are a special type of semiconductor lasers and have shown high single-mode output powers and low-divergent beams for the infrared and visible spectral range. So far, UV-C PCSELs have only been demonstrated under optical pumping. Here, we investigate the influence of design parameters, such as the photonic crystal size and the lattice constant, on the lasing characteristics in optically pumped UV-C PCSELs through experiments and simulations. We show that the PCSELs are very sensitive to the lattice constant, where a range from 137 to 140 nm results in low-threshold devices. Also, the PCSEL size influences the threshold, which increases drastically for PCSELs &amp;lt; 70 μm. Finally, we explain the origin of high-angle lasing modes and how they can be suppressed by a small PCSEL size. For a device size around 70–90 μm in diameter, both a low-divergence far-field emission and a relatively low threshold can be achieved. Our findings provide a deeper understanding of UV-C PCSELs and pave the way for the development of future electrically driven high-power light sources.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"38 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149091263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Integration\u0000of Photonic Crystal Nanolasers with V-Shaped\u0000Nanoslots into Silicon Waveguides","authors":"Tsan-Wen Lu,Hsi-Wen Huang,Chia-Ruei Yang,Chang-Chi Jung,Po-Tsung Lee","doi":"10.1021/acsphotonics.6c01205","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01205","url":null,"abstract":"Abstract This study demonstrates an end-coupling configuration that integrates a III–V slotted nanobeam (NB) laser into an air-clad silicon-on-insulator waveguide. This integration is realized by simultaneously assembling and wedging two identical NBs into a waveguide notch in a single step via a mechanically guided transfer-printing technique. The assembled NB features a novel nanoslot with a V-shaped cross-section and a minimum width of approximately 6 nm, enabling extreme field concentration at the slot opening─a characteristic highly beneficial for enhancing light–matter interaction with the surrounding media. By incorporating reduced lattice periods on the NBs and a multimode interference (MMI) coupler design on the silicon waveguide, a theoretical unidirectional coupling efficiency exceeding 80% is achieved for the V-slotted mode. Statistical analysis across multiple devices confirms uniformly high laser emission coupling into the silicon waveguides within the MMI coupling bandwidth. Furthermore, we investigate the impact of various transfer-printing misalignments on the coupling, confirming its robustness and uniformity within the achievable tolerances of our process. These findings provide a reliable approach to implementing slotted active devices in silicon-based photonic circuits, offering significant advantages for diverse applications requiring enhanced light–matter interactions.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"66 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149091262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}