ACS Photonics最新文献_第8页

Low-Loss Nanophotonic Devices with Chip-Level Uniformity and Integrated Color Centers in an SiC-On-Insulator 具有片级均匀性和绝缘体上集成色心的低损耗纳米光子器件

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2025-05-02 DOI: 10.1021/acsphotonics.4c01834

Jason Lipton, Brett Yurash, Adam Sorensen, John Vajo, Samuel Whiteley, Tong Wang, Biqin Huang, Xiwei Bai, Adrian Portales, Sam Rubin, Judas Strayer, Jason Graetz, Shanying Cui

{"title":"Low-Loss Nanophotonic Devices with Chip-Level Uniformity and Integrated Color Centers in an SiC-On-Insulator","authors":"Jason Lipton, Brett Yurash, Adam Sorensen, John Vajo, Samuel Whiteley, Tong Wang, Biqin Huang, Xiwei Bai, Adrian Portales, Sam Rubin, Judas Strayer, Jason Graetz, Shanying Cui","doi":"10.1021/acsphotonics.4c01834","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01834","url":null,"abstract":"4H–SiC is a promising material platform for quantum photonic integrated circuits due to its wide bandgap, high refractive index, and variety of optically addressable defects, while being compatible with CMOS fabrication processes. However, it is currently not possible to fabricate chip-scale photonic integrated circuits with integrated color centers due to nonuniformity of SiC thickness arising from the SiC-on-insulator fabrication process. We apply the concept of dopant-selective photoelectrochemical etching to a SiC-on-insulator stack for a highly effective total thickness variation (TTV) reduction. We show a reduction of SiC TTV by a factor of 7 through selectively etching a high-TTV sacrificial n-type layer, to stop on an epitaxially defined intrinsic layer. Fabricated photonic devices on selectively etched SiCOI exhibit a high yield of optical elements while maintaining a record low propagation loss for 920 nm single-mode optical elements in SiC (2 dB/cm). Finally, we show etch process compatibility with color centers through the measurement of zero phonon line emission from ensemble divacancy defects into our fabricated waveguides. This work represents the first successful demonstration of a TTV reduction method in SiCOI that is compatible with color center emission, marking a significant advancement toward scalable 4H–SiC-on-insulator integrated photonics for quantum technologies.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"19 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143901822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Single-Objective Airy Light-Sheet Imaging 单物镜光片成像

IF 6.5 1区物理与天体物理

ACS Photonics Pub Date : 2025-05-02 DOI: 10.1021/acsphotonics.4c0207810.1021/acsphotonics.4c02078

Ramachandran Kasu, Haokun Luo, Shirley Luckhart, Demetrios N. Christodoulides and Andreas E. Vasdekis*,

{"title":"Single-Objective Airy Light-Sheet Imaging","authors":"Ramachandran Kasu, Haokun Luo, Shirley Luckhart, Demetrios N. Christodoulides and Andreas E. Vasdekis*, ","doi":"10.1021/acsphotonics.4c0207810.1021/acsphotonics.4c02078","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c02078https://doi.org/10.1021/acsphotonics.4c02078","url":null,"abstract":"Despite its massive potential, standard light-sheet imaging (LSI) faces key challenges, such as the incompatibility with common sample mounting techniques and low-resolution imaging. Single-objective LSI attempts to address these issues but often suffers from limited fields-of-view and throughput rates, or requires multiple optics that increase costs, alignment complexity, and losses. To overcome these challenges of standard single-objective LSI, we introduce single-objective Airy light-sheet imaging (SoALSI). SoALSI leverages the extraordinary self-acceleration properties of the Airy beam, achieving 5× higher imaging rates and enhanced imaging efficiency than standard single-objective LSI. We demonstrate SoALSI’s versatility through rigorous contrast and resolution characterizations and by high-resolution imaging of diverse biological specimens, including malaria parasite-infected red blood cells and plant root tissue. SoALSI seamlessly integrates with any standard inverted microscope frame, enabling broader accessibility for the bioimaging community to explore biological processes in a wide range of specimens with enhanced resolution and imaging contrast.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"12 5","pages":"2432–2439 2432–2439"},"PeriodicalIF":6.5,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144097881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-Loss Nanophotonic Devices with Chip-Level Uniformity and Integrated Color Centers in SiC-On-Insulator 具有片级均匀性和绝缘体上sic集成色心的低损耗纳米光子器件

IF 6.5 1区物理与天体物理

ACS Photonics Pub Date : 2025-05-02 DOI: 10.1021/acsphotonics.4c0183410.1021/acsphotonics.4c01834

Jason Lipton*, Brett Yurash, Adam Sorensen, John Vajo, Samuel Whiteley, Tong Wang, Biqin Huang, Xiwei Bai, Adrian Portales, Sam Rubin, Judas Strayer, Jason Graetz and Shanying Cui*,

{"title":"Low-Loss Nanophotonic Devices with Chip-Level Uniformity and Integrated Color Centers in SiC-On-Insulator","authors":"Jason Lipton*, Brett Yurash, Adam Sorensen, John Vajo, Samuel Whiteley, Tong Wang, Biqin Huang, Xiwei Bai, Adrian Portales, Sam Rubin, Judas Strayer, Jason Graetz and Shanying Cui*, ","doi":"10.1021/acsphotonics.4c0183410.1021/acsphotonics.4c01834","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01834https://doi.org/10.1021/acsphotonics.4c01834","url":null,"abstract":"4H–SiC is a promising material platform for quantum photonic integrated circuits due to its wide bandgap, high refractive index, and variety of optically addressable defects, while being compatible with CMOS fabrication processes. However, it is currently not possible to fabricate chip-scale photonic integrated circuits with integrated color centers due to nonuniformity of SiC thickness arising from the SiC-on-insulator fabrication process. We apply the concept of dopant-selective photoelectrochemical etching to a SiC-on-insulator stack for a highly effective total thickness variation (TTV) reduction. We show a reduction of SiC TTV by a factor of 7 through selectively etching a high-TTV sacrificial n-type layer, to stop on an epitaxially defined intrinsic layer. Fabricated photonic devices on selectively etched SiCOI exhibit a high yield of optical elements while maintaining a record low propagation loss for 920 nm single-mode optical elements in SiC (2 dB/cm). Finally, we show etch process compatibility with color centers through the measurement of zero phonon line emission from ensemble divacancy defects into our fabricated waveguides. This work represents the first successful demonstration of a TTV reduction method in SiCOI that is compatible with color center emission, marking a significant advancement toward scalable 4H–SiC-on-insulator integrated photonics for quantum technologies.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"12 5","pages":"2397–2405 2397–2405"},"PeriodicalIF":6.5,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144097882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Near-infrared Polarization Modulation of Photonic Devices by Ferroelectric Polarization 基于铁电极化的光子器件近红外偏振调制

IF 6.5 1区物理与天体物理

ACS Photonics Pub Date : 2025-05-02 DOI: 10.1021/acsphotonics.4c0256510.1021/acsphotonics.4c02565

Chunmin Ning, Fangqi Liu*, Yutong Liu, Shichen Zhang, Rui Xiong* and Sicong Zhu*,

{"title":"Near-infrared Polarization Modulation of Photonic Devices by Ferroelectric Polarization","authors":"Chunmin Ning, Fangqi Liu*, Yutong Liu, Shichen Zhang, Rui Xiong* and Sicong Zhu*, ","doi":"10.1021/acsphotonics.4c0256510.1021/acsphotonics.4c02565","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c02565https://doi.org/10.1021/acsphotonics.4c02565","url":null,"abstract":"Heterojunction engineering is currently used as an effective strategy to modulate and enrich the optoelectronic properties of target materials. However, the strict energy band alignment and high external field energy driving the working band limit its implementation to some extent. Here, we present a novel photovoltaic/ferroelectric heterojunction, InSiTe3/α-In2Se3, in which ferroelectric polarization easily and efficiently regulates the built-in electric field in the interlayer. By reversing the ferroelectric polarization direction of In2Se3, we find that the electronic band structure of InSiTe3 shows a difference between closed (0 eV) and open (0.67 eV), which results in a logical control from ″0″ to ″1″. Further, this change in the electronic bands leads to a significant increase in light absorption intensity as well as blue- and red-shifting of the light absorption peaks. This is ascribed to variations in the direction of ferroelectric polarization affecting the interlayer charge transfer, leading to differences in the contribution of the electronic orbitals near the Fermi energy level. In photonic device simulations, the optical polarization anisotropy of InSiTe3/α-In2Se3-based photonic devices in the near-infrared (NIR) band can be modulated by switching the direction of ferroelectric polarization of In2Se3 through an electric field. These results suggest that ferroelectric and photovoltaic heterojunction engineering can serve as a conventional tool for fully electronically modulating the performance of optoelectronic devices.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"12 5","pages":"2548–2556 2548–2556"},"PeriodicalIF":6.5,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144097880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Single-Objective Airy Light-Sheet Imaging 单物镜光片成像

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2025-05-02 DOI: 10.1021/acsphotonics.4c02078

Ramachandran Kasu, Haokun Luo, Shirley Luckhart, Demetrios N. Christodoulides, Andreas E. Vasdekis

{"title":"Single-Objective Airy Light-Sheet Imaging","authors":"Ramachandran Kasu, Haokun Luo, Shirley Luckhart, Demetrios N. Christodoulides, Andreas E. Vasdekis","doi":"10.1021/acsphotonics.4c02078","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c02078","url":null,"abstract":"Despite its massive potential, standard light-sheet imaging (LSI) faces key challenges, such as the incompatibility with common sample mounting techniques and low-resolution imaging. Single-objective LSI attempts to address these issues but often suffers from limited fields-of-view and throughput rates, or requires multiple optics that increase costs, alignment complexity, and losses. To overcome these challenges of standard single-objective LSI, we introduce single-objective Airy light-sheet imaging (SoALSI). SoALSI leverages the extraordinary self-acceleration properties of the Airy beam, achieving 5× higher imaging rates and enhanced imaging efficiency than standard single-objective LSI. We demonstrate SoALSI’s versatility through rigorous contrast and resolution characterizations and by high-resolution imaging of diverse biological specimens, including malaria parasite-infected red blood cells and plant root tissue. SoALSI seamlessly integrates with any standard inverted microscope frame, enabling broader accessibility for the bioimaging community to explore biological processes in a wide range of specimens with enhanced resolution and imaging contrast.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"35 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143901823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Near-infrared Polarization Modulation of Photonic Devices by Ferroelectric Polarization 基于铁电极化的光子器件近红外偏振调制

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2025-05-02 DOI: 10.1021/acsphotonics.4c02565

Chunmin Ning, Fangqi Liu, Yutong Liu, Shichen Zhang, Rui Xiong, Sicong Zhu

{"title":"Near-infrared Polarization Modulation of Photonic Devices by Ferroelectric Polarization","authors":"Chunmin Ning, Fangqi Liu, Yutong Liu, Shichen Zhang, Rui Xiong, Sicong Zhu","doi":"10.1021/acsphotonics.4c02565","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c02565","url":null,"abstract":"Heterojunction engineering is currently used as an effective strategy to modulate and enrich the optoelectronic properties of target materials. However, the strict energy band alignment and high external field energy driving the working band limit its implementation to some extent. Here, we present a novel photovoltaic/ferroelectric heterojunction, InSiTe3/α-In2Se3, in which ferroelectric polarization easily and efficiently regulates the built-in electric field in the interlayer. By reversing the ferroelectric polarization direction of In2Se3, we find that the electronic band structure of InSiTe3 shows a difference between closed (0 eV) and open (0.67 eV), which results in a logical control from ″0″ to ″1″. Further, this change in the electronic bands leads to a significant increase in light absorption intensity as well as blue- and red-shifting of the light absorption peaks. This is ascribed to variations in the direction of ferroelectric polarization affecting the interlayer charge transfer, leading to differences in the contribution of the electronic orbitals near the Fermi energy level. In photonic device simulations, the optical polarization anisotropy of InSiTe3/α-In2Se3-based photonic devices in the near-infrared (NIR) band can be modulated by switching the direction of ferroelectric polarization of In2Se3 through an electric field. These results suggest that ferroelectric and photovoltaic heterojunction engineering can serve as a conventional tool for fully electronically modulating the performance of optoelectronic devices.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"56 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143901824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrafast Terahertz Emission in Centrosymmetric Films Driven by Nonlinear Photon-Drag Injection Currents 非线性光子拖动注入电流驱动的中心对称膜超快太赫兹发射

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2025-05-01 DOI: 10.1021/acsphotonics.5c00269

Long Geng, Wenjie Zhang, Qiushi Ma, Peng Suo, Kaiwen Sun, Chen Wang, Jun Peng, Yuqing Zou, Wei Wang, Xian Lin, Xiaodong Zeng, Guohong Ma

{"title":"Ultrafast Terahertz Emission in Centrosymmetric Films Driven by Nonlinear Photon-Drag Injection Currents","authors":"Long Geng, Wenjie Zhang, Qiushi Ma, Peng Suo, Kaiwen Sun, Chen Wang, Jun Peng, Yuqing Zou, Wei Wang, Xian Lin, Xiaodong Zeng, Guohong Ma","doi":"10.1021/acsphotonics.5c00269","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c00269","url":null,"abstract":"The nonlinear injection photocurrent, a second-order photogalvanic effect absent in centrosymmetric structures, can be revived by the photon-drag effect (PDE), leading to efficient terahertz (THz) radiation. Previous studies on THz emission from centrosymmetric films under oblique incidence attributed the effects to PDE-induced nonlinear photocurrents, and pump polarization-dependent THz emission was analyzed usually with the material’s point group. However, these studies overlooked two critical issues: (1) the distinction between the photon-drag shift and injection currents in transient THz radiation and (2) the irrelevance of pump polarization-dependent THz emission to the point group in centrosymmetric materials. Our theoretical analysis reveals that when the band velocity of conduction bands is a substantial difference from that of valence bands, the photon-drag injection current dominates in thin films with inverse symmetry following optical excitation, while the nonlinear photon-drag shift current is negligible. This theory is supported by ultrafast THz emission spectroscopy on a 1T′-MoTe2 film and aligns well with existing literatures. This study introduces a new efficient THz emitter and enhances the understanding of nonlinear photon-drag currents in centrosymmetric materials, potentially guiding the design of THz radiation devices.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"68 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143893111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrafast Terahertz Emission in Centrosymmetric Films Driven by Nonlinear Photon-Drag Injection Currents 非线性光子拖动注入电流驱动的中心对称膜超快太赫兹发射

IF 6.5 1区物理与天体物理

ACS Photonics Pub Date : 2025-05-01 DOI: 10.1021/acsphotonics.5c0026910.1021/acsphotonics.5c00269

Long Geng, Wenjie Zhang, Qiushi Ma, Peng Suo*, Kaiwen Sun, Chen Wang, Jun Peng, Yuqing Zou, Wei Wang, Xian Lin, Xiaodong Zeng* and Guohong Ma*,

{"title":"Ultrafast Terahertz Emission in Centrosymmetric Films Driven by Nonlinear Photon-Drag Injection Currents","authors":"Long Geng, Wenjie Zhang, Qiushi Ma, Peng Suo*, Kaiwen Sun, Chen Wang, Jun Peng, Yuqing Zou, Wei Wang, Xian Lin, Xiaodong Zeng* and Guohong Ma*, ","doi":"10.1021/acsphotonics.5c0026910.1021/acsphotonics.5c00269","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c00269https://doi.org/10.1021/acsphotonics.5c00269","url":null,"abstract":"The nonlinear injection photocurrent, a second-order photogalvanic effect absent in centrosymmetric structures, can be revived by the photon-drag effect (PDE), leading to efficient terahertz (THz) radiation. Previous studies on THz emission from centrosymmetric films under oblique incidence attributed the effects to PDE-induced nonlinear photocurrents, and pump polarization-dependent THz emission was analyzed usually with the material’s point group. However, these studies overlooked two critical issues: (1) the distinction between the photon-drag shift and injection currents in transient THz radiation and (2) the irrelevance of pump polarization-dependent THz emission to the point group in centrosymmetric materials. Our theoretical analysis reveals that when the band velocity of conduction bands is a substantial difference from that of valence bands, the photon-drag injection current dominates in thin films with inverse symmetry following optical excitation, while the nonlinear photon-drag shift current is negligible. This theory is supported by ultrafast THz emission spectroscopy on a 1T′-MoTe2 film and aligns well with existing literatures. This study introduces a new efficient THz emitter and enhances the understanding of nonlinear photon-drag currents in centrosymmetric materials, potentially guiding the design of THz radiation devices.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"12 5","pages":"2736–2745 2736–2745"},"PeriodicalIF":6.5,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144098100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Monolithic 960/1000 nm Bicolor Semiconductor Disk Laser Delivers a Brightness of Over 300 MW/cm2sr 单片960/1000纳米双色半导体光盘激光器提供超过300 MW/cm2sr的亮度

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2025-04-30 DOI: 10.1021/acsphotonics.5c00401

Zhicheng Zhang, Yao Xiao, Wenbo Zhan, Huadong Pan, Longji Li, Heng Liu, Pei Miao, Fangyuan Sun, Yang Cheng, Wu Zhao, Hao Yu, Xiao Li, Chaofan Zhang, Jun Wang

{"title":"Monolithic 960/1000 nm Bicolor Semiconductor Disk Laser Delivers a Brightness of Over 300 MW/cm2sr","authors":"Zhicheng Zhang, Yao Xiao, Wenbo Zhan, Huadong Pan, Longji Li, Heng Liu, Pei Miao, Fangyuan Sun, Yang Cheng, Wu Zhao, Hao Yu, Xiao Li, Chaofan Zhang, Jun Wang","doi":"10.1021/acsphotonics.5c00401","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c00401","url":null,"abstract":"High-brightness dual-color sources are highly prized in the plethora of nascent applications. Here, we expound upon a new theoretical design and experimental examinations for the attainment of a bicolor semiconductor disk laser. Numerical investigations are conducted in detail, disclosing that the dual-color gain with a separation spanning several tens of nanometers can be actualized via the accurate manipulation of the temperature-dependent quantum wells (QWs) gain-filtering and the disk microcavity-filtering. Employing this strategy, a 960/1000 nm gain chip is engineered. The experimental outcomes evinced that the emission wavelength can be adroitly shifted by governing the pump power or temperature. During the dual-wavelength operation, a near-diffraction-limited power of 3.8 W is procured, the beam quality factor M2 is in the vicinity of 1.1, and the brightness reaches approximately 310 MW/cm2sr. The quasi-continuous wave performances are also appraised under a duty cycle of approximately 10%. A pulse energy of 0.85 mJ and a peak brightness of around 0.75 GW/cm2sr is attained. Moreover, the dual-wavelength stability and synchronization are also corroborated. Overall, these investigative undertakings substantially augment the performance gamut of semiconductor lasers and can be construed as elongation and augmentation of the antecedent works in this discipline.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"34 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143890137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Temperature Strong Nonreciprocal Thermal Radiation from Semiconductors 半导体的高温强非互反热辐射

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2025-04-30 DOI: 10.1021/acsphotonics.5c00365

Bardia Nabavi, Sina Jafari Ghalekohneh, Komron J. Shayegan, Eric J. Tervo, Harry Atwater, Bo Zhao

{"title":"High-Temperature Strong Nonreciprocal Thermal Radiation from Semiconductors","authors":"Bardia Nabavi, Sina Jafari Ghalekohneh, Komron J. Shayegan, Eric J. Tervo, Harry Atwater, Bo Zhao","doi":"10.1021/acsphotonics.5c00365","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c00365","url":null,"abstract":"Nonreciprocal thermal emitters that break the conventional Kirchhoff’s law allow independent control of emissivity and absorptivity and promise exciting new functionalities in controlling heat flow for thermal and energy applications. In enabling some of these applications, nonreciprocal thermal emitters will unavoidably need to serve as hot emitters. Leveraging magneto-optical effects, degenerate semiconductors have been demonstrated as a promising optical material platform for nonreciprocal thermal radiation. However, existing modeling and experimental efforts are limited to near room temperature (<373 K), and it remains unclear whether nonreciprocal properties can persist at high temperatures. In this work, we demonstrate strong nonreciprocal radiative properties at temperatures up to 600 K. We propose a theoretical model by considering the temperature dependence of the key parameters for the nonreciprocal behavior and experimentally investigate the temperature dependence of the nonreciprocal properties of sufficiently doped InAs, a degenerate semiconductor, using a customized angle-resolved high-temperature magnetic emissometry setup. Our theoretical model and experimental results show agreement, revealing that strong nonreciprocity can persist at temperatures over 800 K for high-temperature stable semiconductors, enabling a pathway for nonreciprocal radiative heat flow control at high temperatures.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"196 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143890136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0