Quantum Dot Photodetector and Laser Monolithically Integrated on Silicon Photonics

Abstract

III–V quantum dot (QD) photodetectors enable on-chip sensing in the telecommunications O-band with high responsivity and low dark current. We demonstrate for the first time III–V QD photodetectors monolithically integrated with silicon nitride waveguides and III–V QD lasers. III–V QD material is heteroepitaxially grown in pockets on silicon photonics coupons, where it is coprocessed into III–V ridge waveguides serving as both photodetectors and lasers. The photodetectors have a dark current of 250 pA and a responsivity of 0.344 A/W at a –2 V bias. Photodetectors integrated with lasers in a loop configuration correctly measure threshold current and in-waveguide optical power at the few-mW level. This work demonstrates multifunctional III–V devices on the silicon photonics platform, enabling a wider variety of monolithically integrated active components without the need for additional process steps.