ACS Photonics最新文献_第4页

van der Waals Distributed Bragg Reflectors with SubmicronThickness for Enhanced WSe2 Photodetector Performance 增强WSe2光电探测器性能的亚微米厚度范德华分布Bragg反射器

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-09 DOI: 10.1021/acsphotonics.6c01447

Sumei Wang,Nanjie Jiang,Zijie Lai,Jianhua Ren,Xiangbin Shen,Daiquan Zhang,Jiaxin Gong,Pengcheng Cai,Yizhen Gan,Guangxu Liu,Huijuan Zhao,Zehua Hu,Li Gao

{"title":"van der Waals Distributed Bragg Reflectors with Submicron\u0000Thickness for Enhanced WSe2 Photodetector Performance","authors":"Sumei Wang,Nanjie Jiang,Zijie Lai,Jianhua Ren,Xiangbin Shen,Daiquan Zhang,Jiaxin Gong,Pengcheng Cai,Yizhen Gan,Guangxu Liu,Huijuan Zhao,Zehua Hu,Li Gao","doi":"10.1021/acsphotonics.6c01447","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01447","url":null,"abstract":"Abstract Distributed Bragg reflectors (DBRs) are essential passive photonic components for spectral selectivity and optical field confinement, yet high-performance DBRs remain largely absent from the van der Waals (vdW) materials platform. Here we report a submicron-thick vdW DBR composed of alternating multilayer tungsten disulfide (WS2) and hexagonal boron nitride (hBN), establishing a compact passive optical building block for all-vdW photonics. Enabled by the large refractive-index contrast between multilayer WS2 and hBN, the 576 nm-thick DBR exhibits an experimental reflectance exceeding 97% and a stopband spanning 660 to 1060 nm. When integrated with tungsten diselenide (WSe2), the vdW DBR increases the layer-resolved absolute absorptance of the ∼4 nm WSe2 layer from 8% to 34% near the excitonic resonance, and photodetectors incorporating the DBR show an approximately 18.5-fold enhancement in responsivity at 750 nm relative to bare devices. Additional molybdenum disulfide (MoS2)/hBN DBR further demonstrates that the design is generalizable across transition metal dichalcogenide (TMD)/hBN material systems. These results show that layered vdW materials can serve not only as active optoelectronic media but also as high-performance passive photonic components, opening a route toward compact, integrable all-vdW optoelectronic and on-chip photonic platforms.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"182 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149150848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Domain-Selective Enhancement of Second Harmonic Generationin Monolayer MoS2 via Ferroelectricity-Controlled Photodoping 利用铁电控制的光掺杂增强单层MoS2中二次谐波的畴选择性

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-09 DOI: 10.1021/acsphotonics.6c01966

David Hernández-Pinilla,Line Jelver,María Jesús Martínez-Morillo,César Hernando-Fuente,Miquel Cherta Garrido,Guillermo López-Polin,Joel D. Cox,Luisa E. Bausá,Mariola O. Ramírez

{"title":"Domain-Selective Enhancement of Second Harmonic Generation\u0000in Monolayer MoS2 via Ferroelectricity-Controlled Photodoping","authors":"David Hernández-Pinilla,Line Jelver,María Jesús Martínez-Morillo,César Hernando-Fuente,Miquel Cherta Garrido,Guillermo López-Polin,Joel D. Cox,Luisa E. Bausá,Mariola O. Ramírez","doi":"10.1021/acsphotonics.6c01966","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01966","url":null,"abstract":"Abstract Hybrid heterostructures combining two-dimensional semiconductors with ferroelectric materials offer a versatile route to actively control light–matter interactions at the nanoscale. Here, we report all-optical, light-induced domain-selective control of second-harmonic generation (SHG) in monolayer molybdenum disulfide (MoS2) integrated with periodically poled lithium niobate (LiNbO3). Spatially resolved SHG imaging reveals a pronounced modulation of the nonlinear optical response of monolayer MoS2 governed by the ferroelectric domain pattern of the underlying substrate. A strong SHG contrast is observed between domains of opposite polarization, with a marked dependence on both the excitation wavelength and the incident optical power. The comparison between ferroelectric domains that either enable or do not exhibit light-driven photodoping in the MoS2 monolayer provides a direct assessment of the role of carrier density in the nonlinear optical response. We find that ferroelectric-polarization-controlled photodoping at the MoS2/LiNbO3 interface enhances the effective second-order susceptibility, χ(2), producing an increase in SHG intensity of up to ∼70% under resonant excitation conditions. Ab initio calculations corroborate that charge doping modifies the electronic band structure of MoS2 and strongly affects χ(2) in the resonant regime, providing microscopic support for the experimentally observed modulation. The results highlight the combination of light intensity and ferroelectricity as a powerful knob for band-structure modulation in 2D materials and reconfigurable nonlinear optical responses, opening pathways toward programmable frequency conversion, smart light modulators, and advanced nonlinear photonic functionalities in integrated hybrid platforms.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"11 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149150849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Lens-Free,Wide-FOV Structured Light Sensing Enabledby Slanted Grating Optical Switch Arrays 斜光栅光开关阵列实现无透镜、宽视场结构光传感

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-08 DOI: 10.1021/acsphotonics.6c01695

Qiqi Yuan,Danye Wang,Weihan Xu,Yitao Chen,Chang Li,Dongju Du,Liangjun Lu,Xinwan Li,Jianping Chen,Linjie Zhou

{"title":"Lens-Free,\u0000Wide-FOV Structured Light Sensing Enabled\u0000by Slanted Grating Optical Switch Arrays","authors":"Qiqi Yuan,Danye Wang,Weihan Xu,Yitao Chen,Chang Li,Dongju Du,Liangjun Lu,Xinwan Li,Jianping Chen,Linjie Zhou","doi":"10.1021/acsphotonics.6c01695","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01695","url":null,"abstract":"Abstract High-precision three-dimensional (3D) sensing is essential for robotics and automation. However, conventional structured light (SL) systems often lack spatial reconfigurability for high-dynamic-range (HDR) scenarios, while reconfigurable SL pattern generators such as optical phased arrays (OPAs) and lens-assisted focal plane switch arrays (FPSAs) are limited by element-factor-induced efficiency roll-off and off-axis aberrations at wide angles. This paper proposes an adaptive, lens-free SL patterning engine based on a 1 × 64 optical-switch-addressed slanted grating antenna array on a Si3N4–SOI hybrid platform. The element factor is tuned by adapting the Bragg condition for 3D diffraction manipulation, achieving a wide field of view (FOV) of 100° × 29.6°. A weakly perturbed waveguide grating improves the longitudinal divergence to 0.054°. System-level validation demonstrates that the engine effectively compensates for reflectivity contrasts up to 16 dB, utilizing adaptive power adjustment to resolve targets in HDR scenes. We achieve a sub-millimeter 3D reconstruction root-mean-square error (RMSE) of 501.3 μm at a distance of 247 mm in the central region and maintain robust sub-millimeter fidelity across a large FOV. This architecture provides a robust approach for next-generation solid-state, intelligent 3D sensing.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"56 1 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149150911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bi-wavelength-Gated Plasticity in Defect-Engineeredβ - Ga2O3 OptoelectronicSynapses for Bioinspired Visual Systems 生物视觉系统中缺陷工程β - Ga2O3光电突触的双波长门控可塑性

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-08 DOI: 10.1021/acsphotonics.6c01538

Zhihao Yu,Xiaoyu Jiang,Chao Wu,Haizheng Hu,Shunli Wang,Daoyou Guo

{"title":"Bi-wavelength-Gated Plasticity in Defect-Engineered\u0000β\u0000 -\u0000 Ga2O3 Optoelectronic\u0000Synapses for Bioinspired Visual Systems","authors":"Zhihao Yu,Xiaoyu Jiang,Chao Wu,Haizheng Hu,Shunli Wang,Daoyou Guo","doi":"10.1021/acsphotonics.6c01538","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01538","url":null,"abstract":"Abstract Optoelectronic synapses that integrate light sensing, memory, and preprocessing are highly desirable for neuromorphic vision. However, most reported optoelectronic synapses rely on a single optical stimulus and mainly exhibit passive modulation of the photoresponse, making it difficult to actively distinguish transient interference from information that should be retained. Here, we report a wavelength-gated optoelectronic synapse based on defect-engineered β-Ga2O3, in which short-term (STP) and long-term synaptic plasticity (LTP) can be selectively programmed by dual-wavelength ultraviolet illumination. X-ray photoelectron spectroscopy (XPS) and temperature-dependent photoluminescence (PL) measurements indicate that N incorporation change the defect states of β-Ga2O3 by introducing N-related defect states and altering oxygen vacancy (VO), which provide effective pathways for wavelength-dependent carrier trapping, release, and recombination dynamics. Under 254 nm illumination, near-band-edge excitation leads to fast carrier recombination and STP, whereas 365 nm photons activate sub-bandgap defect states, enabling persistent photoconductivity and LTP. Benefiting from this wavelength-selective memory behavior, a physical-layer encrypted image transmission strategy is further demonstrated. Furthermore, a wavelength-gated reservoir-computing framework is constructed for noise-robust face recognition by coupling device-level preprocessing with reservoir readout. Owing to the transient erasure of noise information and the long-term retention of valid visual features, the system with preprocessing achieves a recognition accuracy of 94%, outperforming the system without preprocessing, which achieves 83%. This work provides a defect-engineering strategy for wavelength-programmable β-Ga2O3 optoelectronic synapses and highlights their potential for selective memory, secure optical communication, and neuromorphic visual.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"7 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149150910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Intrinsic Photoresponsesof As-Exfoliated Few-LayerMoS2 Phototransistors as剥离少层mos2光电晶体管的本征光响应

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-08 DOI: 10.1021/acsphotonics.6c01969

Wenhan Song,Jianyong Wei,Yue Yu,Qijin Liu,Zhentao Lian,Yumeng Liu,Maosong Xie,Kai Li,Shuwen Guo,Zhijuan Su,Rui Yang,Yaping Dan

{"title":"Intrinsic Photoresponses\u0000of As-Exfoliated Few-Layer\u0000MoS2 Phototransistors","authors":"Wenhan Song,Jianyong Wei,Yue Yu,Qijin Liu,Zhentao Lian,Yumeng Liu,Maosong Xie,Kai Li,Shuwen Guo,Zhijuan Su,Rui Yang,Yaping Dan","doi":"10.1021/acsphotonics.6c01969","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01969","url":null,"abstract":"Abstract The photoresponse of two-dimensional MoS2 photodetectors is often dominated by extrinsic effects, such as photoinduced Schottky barrier modulation and interfacial trap-induced photogating, which obscure the intrinsic material properties. To investigate the channel-dominated photoresponse of as-exfoliated few-layer MoS2, we fabricate suspended-channel phototransistors with bismuth-based Ohmic contacts to suppress major extrinsic effects from contacts and substrate interfaces. Through a direct comparison with conventional substrate-supported devices also with Ohmic contacts, we demonstrate that the suspended devices exhibit a fast response (45/83 μs rise/fall time) and a low-noise photocurrent consistent with a photoinduced narrowing of local depletion regions associated with defect states, described by a depletion-region modulation model originally developed for polycrystalline photoconductors. In contrast, conventional devices show orders-of-magnitude higher responsivity but suffer from slow, trap-dominated dynamics and significantly elevated noise. Parameter extraction from the photocurrent fitting reveals a minority carrier recombination lifetime of ∼2.03 ns in the suspended channel. This work clarifies the intrinsic photoresponse mechanism of MoS2 and underscores the critical role of interface engineering in realizing high-speed, low-noise photodetectors based on two-dimensional semiconductors.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"24 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149150897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spectrally Filtered Optical Convolutional Neural Networkfor Shift-Robust Bright-Field Classification 移位鲁棒性光场分类的频谱滤波光学卷积神经网络

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-08 DOI: 10.1021/acsphotonics.6c01168

Xiangyu Chen,Chunyu Chen,Hao Sha,Ziming Huang,Yuan Jiang,Xiaochen Feng,Wenzhen Zou,Taiqin Chen,Yongbing Zhang

{"title":"Spectrally Filtered Optical Convolutional Neural Network\u0000for Shift-Robust Bright-Field Classification","authors":"Xiangyu Chen,Chunyu Chen,Hao Sha,Ziming Huang,Yuan Jiang,Xiaochen Feng,Wenzhen Zou,Taiqin Chen,Yongbing Zhang","doi":"10.1021/acsphotonics.6c01168","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01168","url":null,"abstract":"Abstract Optical neural networks (ONNs) offer high-throughput and energy-efficient computation, providing a promising alternative to conventional electronic systems. However, their application in bright-field microscopy is limited by random spatial displacements of dynamic targets and a strong unmodulated transmitted-light component concentrated at the zero order of the spatial-frequency domain. This direct current (DC) component significantly reduces feature contrast, posing a major challenge for reliable optical inference. To address these challenges, we propose a spectrally filtered optical convolutional neural network (SF-OCNN) that integrates Fourier filtering, optical convolution, and an expanded detection region. The Fourier filter suppresses the DC component before optical convolution while preserving high-frequency structural information. Optical convolution provides inherent translation equivariance, while the expanded detection region accommodates the displacement of the output response during inference. The proposed system is validated through both numerical simulations and physical experiments. It achieves validation accuracies of 91.12% in simulation and 88.50% in the physical experiment on a bright-field MNIST data set (digits 0–3). For experimentally acquired microfluidic cell images re-encoded on the DMD, the corresponding accuracies are 99.50% and 98.25%. These results demonstrate that combining physical DC suppression with optical convolution provides an effective approach for robust optical computing in realistic bright-field environments.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"55 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149150898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

GaSb–TFLN Hybrid Integrated Pockels Laser forUltrafast Spectroscopy in the 2 μm Waveband 2 μm波段超快光谱GaSb-TFLN混合集成口袋激光器

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-08 DOI: 10.1021/acsphotonics.6c01600

Songjian Lin,Rongjin Xie,Zhengqi Geng,Jincheng Wei,Yu Qiao,Chengao Yang,Zhichuan Niu,Ruijun Wang,Siyuan Yu

{"title":"GaSb–TFLN Hybrid Integrated Pockels Laser for\u0000Ultrafast Spectroscopy in the 2 μm Waveband","authors":"Songjian Lin,Rongjin Xie,Zhengqi Geng,Jincheng Wei,Yu Qiao,Chengao Yang,Zhichuan Niu,Ruijun Wang,Siyuan Yu","doi":"10.1021/acsphotonics.6c01600","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01600","url":null,"abstract":"Abstract High-speed wavelength-tunable lasers in the 2 μm waveband are important for laser spectroscopy, optical communication, and frequency-modulated continuous-wave LiDAR. Here, we demonstrate a hybrid integrated Pockels laser that combines a GaSb reflective semiconductor optical amplifier with a thin-film lithium niobate (TFLN) photonic external cavity incorporating a distributed Bragg reflector (DBR). The low-coupling-coefficient DBR provides narrowband optical feedback and increases the photon lifetime, enabling narrow-line width lasing near 1.95 μm. At room temperature, the laser delivers an on-chip output power of 6.5 mW, a side-mode suppression ratio of 39 dB, and an intrinsic line width of 31.6 kHz estimated from the white frequency-noise floor. Benefiting from the Pockels effect in TFLN, the device achieves fast and linear electro-optic wavelength tuning, with a mode-hop-free tuning range of 3.4 GHz, a tuning rate of 2.8 × 1015 Hz/s, and a tuning nonlinearity of 1.6%. We further apply the laser to tunable diode laser absorption spectroscopy and demonstrate MHz-rate scanning of a CO2 absorption line. The measured spectrum agrees well with HITRAN-based simulation, highlighting the potential of this platform for ultrafast spectroscopy and integrated tunable laser systems in the 2 μm waveband.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"83 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149150896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Resonance-TunedPlasmon–Phonon Hybridizationin Continuous Bilayer Graphene 连续双层石墨烯中的共振调谐等离子体-声子杂交

IF 7 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-08 DOI: 10.1021/acsphotonics.6c02184

Sunghyun Hwang,Eui-Hyoun Ryu,Sanghyub Lee,Nayeon Kim,Ji-Hwan Son,Nayoung Kim,SeokJae Yoo,Young Hee Lee,In-Ho Lee,Sang-Hyun Oh

{"title":"Resonance-Tuned\u0000Plasmon–Phonon Hybridization\u0000in Continuous Bilayer Graphene","authors":"Sunghyun Hwang,Eui-Hyoun Ryu,Sanghyub Lee,Nayeon Kim,Ji-Hwan Son,Nayoung Kim,SeokJae Yoo,Young Hee Lee,In-Ho Lee,Sang-Hyun Oh","doi":"10.1021/acsphotonics.6c02184","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c02184","url":null,"abstract":"Abstract Bilayer graphene hosts an infrared-active antisymmetric (Eu) optical phonon whose spectral response is strongly influenced by electronic excitations. While carrier-density control of this phonon has been widely studied, its interaction with collective electronic excitations, graphene plasmons, at nominally fixed carrier density remains less explored. Here we show that resonant plasmonic excitation in chemically doped AB-stacked BLG reshapes the optical phonon response through plasmon–phonon hybridization. A grating-coupled resonator enables efficient far-field excitation of plasmons in a continuous BLG sheet, while a built-in photonic cavity modulates the plasmonic resonance strength. We observe systematic changes in Fano asymmetry, apparent resonance position, spectral weight, and effective line width near the plasmon-strength maximum. Correlation analysis and numerical simulations support plasmon–phonon hybridization as the dominant origin of the observed spectral evolution, with possible intrinsic phonon–electronic coupling. Our findings identify resonance tuning as a distinct route to control plasmon–phonon hybridization and engineer nanoscale mid-infrared light–matter interactions.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"6 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149150909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wavelength-Selective Coexistence of Interfacial Photogating and Bolometric Effects Enables Polarity-Switchable Tri-Mode Optoelectronic Behaviors in HfS2 Phototransistor 波长选择性共存的界面光和热效应使极性可切换的三模光电行为在HfS2光电晶体管

IF 6 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-07 Epub Date: 2026-09-04 DOI: 10.1021/acsphotonics.6c01997

Lijian Li, Yun Wei, Liangli Chu, Zhenyu Cheng, Minghao Liu, Peng Wan, Caixia Kan, Daning Shi, Zeng Liu, Mingming Jiang

{"title":"Wavelength-Selective Coexistence of Interfacial Photogating and Bolometric Effects Enables Polarity-Switchable Tri-Mode Optoelectronic Behaviors in HfS2 Phototransistor","authors":"Lijian Li, Yun Wei, Liangli Chu, Zhenyu Cheng, Minghao Liu, Peng Wan, Caixia Kan, Daning Shi, Zeng Liu, Mingming Jiang","doi":"10.1021/acsphotonics.6c01997","DOIUrl":"10.1021/acsphotonics.6c01997","url":null,"abstract":"Conventional neuromorphic vision systems suffer fromarchitecturalfragmentation, wherein sensing, memory, and processing are distributedacross discrete modules, causing high latency, energy waste, and poordynamic adaptability. Here, we present a wavelength-driven trimodalfield-effect phototransistor (TriM-FEP) based on layered HfS2, which offers a new solution to this challenge. This single deviceintegrates polarity-switchable photoresponses and synaptic dynamicswithout external bias or complex circuitry. By simply tuning the incidentwavelength, the TriM-FEP delivers three distinct, dynamically switchablephotoresponses: a synaptic-like photoresponse under solar-blind ultraviolet,fast negative photocurrent in the visible, and fast positive photocurrentin the near-infrared. Notably, this unique polarity reversal and speedvariation are dominated by the photogating effect and the bolometriceffect at different wavelengths, respectively. Beyond fundamentalphysics, the TriM-FEP enables real-time multichannel encrypted opticalcommunication and in-sensor image preprocessing, eliminating the needfor separate computing units. This work transcends the limitationsof multicomponent cooperation, establishing a compact, energy-efficientplatform that unifies sensing, memory, and processing at the devicelevel.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"13 19","pages":"5978–5988"},"PeriodicalIF":6.0,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148895005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Energy-Efficient Sub-Terahertz Photoresponse via Sublattice Magnetic Transition 亚晶格磁跃迁的亚太赫兹高能效光响应

IF 6 1区物理与天体物理

ACS Photonics Pub Date : 2026-10-07 Epub Date: 2026-09-14 DOI: 10.1021/acsphotonics.6c00877

Hongfei Wu, Xiaokai Pan, Zhaowen Bao, Xiumin Long, Huichuan Fan, Yingdong Wei, Hao Wei, Mingsheng Long, Xiaoshuang Chen, Xiaofang Wang, Guixin Cao, Wei Lu, Lin Wang

{"title":"Energy-Efficient Sub-Terahertz Photoresponse via Sublattice Magnetic Transition","authors":"Hongfei Wu, Xiaokai Pan, Zhaowen Bao, Xiumin Long, Huichuan Fan, Yingdong Wei, Hao Wei, Mingsheng Long, Xiaoshuang Chen, Xiaofang Wang, Guixin Cao, Wei Lu, Lin Wang","doi":"10.1021/acsphotonics.6c00877","DOIUrl":"10.1021/acsphotonics.6c00877","url":null,"abstract":"Theproliferation of ambient electromagnetic radiation with theexplosion of Internet of Things, 6G communication and millimeter-wavesystems calls for the development of broadband, scalable detectorsoperating under ultralow-power conditions. Here, we demonstrate ahigh-performance, self-driven THz photodetector based on the van derWaals ferromagnetic metal Fe5GeTe2. It is elucidatedthat the room-temperature optoelectronic response is predominantlydriven by the photothermoelectric (PTE) effect under zero-bias conditions.The device achieves stable broadband detection (0.02–0.3 THz),an ultrafast response time of 0.83 μs, and excellent linearpower dependence. Especially, we reveal the intriguing optoelectronicbehavior with significant enlargement of magnitude driven by the intrinsicmagnetic phase transition-specifically the magnetic ordering of theFe1 sublattice below 121 K within the already ferromagnetic matrix.As the temperature drops below 121 K, this localized sublattice magnetictransition significantly facilitates the directional transport ofphotogenerated carriers, translating into a substantially augmentedphotoresponse. Furthermore, leveraging this fundamental process ofmagnetic phase-transition as well as the suppressed thermal noise,the intermediate-frequency (IF) signal intensity in heterodyne mixingis remarkably enhanced by the long-range magnetic-ordering, and remainsalmost unchanged near room temperature. Utilizing these exceptionalcapabilities, we successfully constructed a point-to-point communicationlink for the data-transmission of bit-streams and images. This workprovides a novel strategy for a highly integrated, low-power platformfor future high-signal-to-noise-ratio wireless harvester, broadbanddetection.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"13 19","pages":"5591–5600"},"PeriodicalIF":6.0,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148973633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0