ACS PhotonicsPub Date : 2026-10-07Epub Date: 2026-09-21DOI: 10.1021/acsphotonics.6c01542
Zhuang Li, Shuizhu Yu, Xianyu Ao
{"title":"Dual Flat Bands Enable Synergistic Excitation–Emission Enhancement in Rare-Earth Ions","authors":"Zhuang Li, Shuizhu Yu, Xianyu Ao","doi":"10.1021/acsphotonics.6c01542","DOIUrl":"10.1021/acsphotonics.6c01542","url":null,"abstract":"<p>Rare-earth ions are pivotal for integratedphotonic light sources,but their low optical transition cross sections inherently limit pumpabsorption efficiency and spontaneous emission rates. Here, we overcomethese drawbacks by designing a dielectric metasurface that supportsdual flat bands, which synergistically enhance both excitation andemission processes. Strong momentum–space anticrossings arisefrom hybridization between transverse-electric-like and transverse-magnetic-likesurface lattice resonances hosted by a TiO<sub>2</sub> nanodisk arrayintegrated on a Yb<sup>3+</sup>-doped Ta<sub>2</sub>O<sub>5</sub> slabwaveguide, giving rise to two spectrally separated flat bands. Theshorter-wavelength flat band resonantly boosts pump absorption, whereasthe longer-wavelength counterpart elevates the radiative decay rateof emitters through the Purcell effect. Angle-resolved measurementscorroborate the dispersion characteristics of these flat bands. Underresonant excitation, we demonstrate a photoluminescence enhancementof over 250-fold, alongside a marked reduction in emission lifetimefrom 0.47 to 0.1 ms. Back-focal-plane imaging further confirms thatthe boosted luminescence aligns with the pre-engineered flat-banddispersion relation. This scheme offers a general route to tailorpump absorption efficiency, radiative decay rate, and emission directivitytoward high-performance rare-earth-ion-based on-chip light sources.</p>","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"13 19","pages":"5780–5786"},"PeriodicalIF":6.0,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
ACS PhotonicsPub Date : 2026-10-07Epub Date: 2026-09-25DOI: 10.1021/acsphotonics.6c01266
Yi Wang, Hanbin Wang, Ning Yang, Weidong Chu, Peng Bai, Yinqiao Li, Gang Song, Jiaxuan Cai, Yan Xie, Meng Chen, Yingxin Wang, Zhanglong Fu, Dixiang Shao, Wenjian Wan, Ziran Zhao, Zhaona Wang
{"title":"Bias-Tunable Broadband Infrared Heterostructure Quantum Ratchet Photodetector","authors":"Yi Wang, Hanbin Wang, Ning Yang, Weidong Chu, Peng Bai, Yinqiao Li, Gang Song, Jiaxuan Cai, Yan Xie, Meng Chen, Yingxin Wang, Zhanglong Fu, Dixiang Shao, Wenjian Wan, Ziran Zhao, Zhaona Wang","doi":"10.1021/acsphotonics.6c01266","DOIUrl":"10.1021/acsphotonics.6c01266","url":null,"abstract":"<p>The development of a photon-type very long-wavelengthinfrared(VLWIR) detector that simultaneously achieves broadband spectral responseand elevated operating temperatures remains a formidable challenge.GaAs/AlGaAs quantum ratchet structures have emerged as a promisingarchitecture to circumvent conventional semiconductor bandgap limitations,enabling multispectral detection while effectively suppressing darkcurrent. In this work, metal-organic chemical vapor deposition (MOCVD)-grownGaAs/AlGaAs heterojunction quantum ratchet photodetectors (QRPDs)are demonstrated. Theoretical and experimental studies of the systemwere conducted to investigate its spectral response and transportproperties. The multiperiod quantum ratchet structure exhibits broadbanddetection covering the near-infrared to very long-wavelength infraredbands. The asymmetric low-dimensional quantum structure also leadsto a photovoltaic-like effect with zero bias response and bias-tunedspectral characteristics. A high peak specific detectivity of 2.4 × 10<sup>11</sup> cm·Hz<sup>1/2</sup> W<sup>–1</sup> was achievedat zero bias. Thanks to the suppression of dark current by the ratchetbarrier, the BLIP temperature of the QRPD reached 40 K. This worknot only demonstrates the significant potential of quantum ratchetdevices for broadband high-temperature operation but also verifiesthe feasibility of MOCVD in the mass production of quantum ratchetdevices, offering a promising solution for cost-effective productiteration and broader application scenarios in photon-type infrareddetection.</p>","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"13 19","pages":"5651–5659"},"PeriodicalIF":6.0,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149049959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
ACS PhotonicsPub Date : 2026-10-07DOI: 10.1021/acsphotonics.6c01611
Roark Chao,Vincent Rienzi,Tanay Tak,Alejandro M. Quevedo,Kent N. Nitta,Justin D. Tan,Shuji Nakamura,James S. Speck,Jon A. Schuller,Steven P. DenBaars
{"title":"20.8% Peak\u0000External Quantum Efficiency of Red (619\u0000nm) InGaN/GaN MicroLEDs","authors":"Roark Chao,Vincent Rienzi,Tanay Tak,Alejandro M. Quevedo,Kent N. Nitta,Justin D. Tan,Shuji Nakamura,James S. Speck,Jon A. Schuller,Steven P. DenBaars","doi":"10.1021/acsphotonics.6c01611","DOIUrl":"https://doi.org/10.1021/acsphotonics.6c01611","url":null,"abstract":"Abstract Red-emitting indium gallium nitride (InGaN) micro-light-emitting diodes (μLEDs) remain challenging due to reduced radiative efficiency at the high indium compositions required for long-wavelength emission. Here, we demonstrate InGaN/GaN red μLEDs emitting at 619 nm that are laterally enclosed by an annular distributed Bragg reflector (DBR) to enhance light extraction. Fully packaged devices exhibit peak external quantum efficiencies as high as 20.8% and wall-plug efficiencies of 13.2%, placing them as the highest-performing planar (non-V-defect engineered) red GaN μLEDs on sapphire substrates reported to date. In addition to high efficiency, the devices demonstrate strong thermal robustness, maintaining &gt;74% of their room-temperature light output at 200 °C under high injection conditions with &lt;8 nm peak wavelength shift. These overall results highlight laterally enclosed reflector architectures as a scalable approach for achieving efficient LED emission and, in conjunction with the natural thermal resilience of GaN devices, enable thermally resilient red μLEDs for applications in optical interconnects, visible-light communication, and next-generation displays.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"92 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149091257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}