2005 6th International Conference on Electronic Packaging Technology最新文献_第6页

Thermal Fatigue Failure Analysis of Copper Interconnects under Alternating Currents 交流电作用下铜互连的热疲劳失效分析

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564621

G.P. Zhang, R. Moenig, Y. Park, C. Volkert

{"title":"Thermal Fatigue Failure Analysis of Copper Interconnects under Alternating Currents","authors":"G.P. Zhang, R. Moenig, Y. Park, C. Volkert","doi":"10.1109/ICEPT.2005.1564621","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564621","url":null,"abstract":"In this paper, we present transmission electron microscopy (TEM) investigations of a potential failure mode for Cu lines subjected to alternating thermal loads. Wide Cu lines with 200 nm thickness were produced on a Si/SiO2/SiNx wafer by a series of conventional microfabrication steps. Alternating currents (AC) with a frequency of 100 Hz was then applied to the Cu lines and produced temperature cycles with a range of 190degC due to Joule heating. The cyclic temperature change gave rise to a cyclic strain in the Cu line due to the difference in the thermal expansion coefficient between the metal line and the wafer. The thermally-induced mechanical cyclic loading leads to the formation of severe damage in the Cu lines, such as thinning along the twins and wrinkles in the grain. Eventually the AC loading leads to local melting and electrical failure of the Cu line. TEM investigations revealed that constrained diffusional creep and the interaction of dislocations with twins and other interfaces play an important role in the development of damage. The results for Cu lines tested under thermal fatigue conditions are compared with the microstructure and damage morphology of films tested under pure mechanical fatigue and the important differences and the corresponding damage mechanisms are discussed","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"389 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133904230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Drop Test and Simulation of Portable Electronic Devices 便携式电子设备跌落试验与仿真

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564699

Sheng Liu, Xiaojun Wang, Bin Ma, Zhiyan Gan, Honghai Zhang

{"title":"Drop Test and Simulation of Portable Electronic Devices","authors":"Sheng Liu, Xiaojun Wang, Bin Ma, Zhiyan Gan, Honghai Zhang","doi":"10.1109/ICEPT.2005.1564699","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564699","url":null,"abstract":"Portable electronics devices are well known to be susceptible to drop impact which can cause various damage modes such as interconnect breakage, battery separation, possible cracking/debonding along interfaces, display damage, leaking in insulin pump, etc. Drop/impact performance of these products is one of important concerns of product design. Because of the small size of this type of electronics products, it is very expensive, time-consuming and difficult to conduct drop tests to directly detect the failure mechanisms and identify their drop behaviors. The experiment test and the modeling simulation study are conducted to investigate the effect of drop impact of portable electronic devices. A sample pump as an example is used for drop impact test. Of interest is the measurement of the level of shock and the impact orientation experienced by the electronic components in the insulin pump during impact. The drop impact responses examined are compared with the modeling simulation results. Also, another simulation modeling of the cellphone is given with particular focus on the material rate dependent constitute modeling, and nonlinear contact mechanics based modeling. Maximum impact accelerations and impact forces demonstrated with various impact orientations shows what is the relative reliability of cellphone during the different impact situations","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132798790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 20

AlSiC, and AlSiC Hybrid Composites for Flip Chips, Optoelectronics, Power, and High Brightness LED Thermal Management Solutions 采购产品用于倒装芯片，光电，电源和高亮度LED热管理解决方案的AlSiC和AlSiC混合复合材料

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564720

M. Occhionero, R. Adams

{"title":"AlSiC, and AlSiC Hybrid Composites for Flip Chips, Optoelectronics, Power, and High Brightness LED Thermal Management Solutions","authors":"M. Occhionero, R. Adams","doi":"10.1109/ICEPT.2005.1564720","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564720","url":null,"abstract":"Aluminum silicon carbide (AlSiC) metal matrix composites (MMC) are providing thermal management solutions for numerous electronics applications today for improved reliability including flip chip lids, optoelectronics packaging, power devices and high brightness LED applications. AlSiC has a high thermal conductivity (200 W/mK) and thermal expansion coefficient (TCE) values that are compatible with materials that are used in electronic assemblies. AlSiC also has high strength and high stiffness that is similar to steel at a third the weight. Integration of materials and functional components to AlSiC can be accomplished during the net-shape casting fabrication for low-cost assembly and integration. AlSiC and can be integrated with high heat dissipation materials such as thermal pyrolytic graphite (TPG), or CVD diamond to from hybrid composite structures for application that require very high heat dissipation. AlSiC composite package fabrication process provides the most cost effective means to integrate these high heat dissipation materials into an electronic packaging assembly as discussed. This paper explores the thermal management solutions provided by AlSiC and AlSiC hybrid composite products. Performance and reliability were discussed for various applications. Thermal dissipation performance was illustrated using thermal modeling of currently produced product","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123863561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Finite element analysis of thermo-hygro-mechanical failure of a flip chip package 倒装芯片封装热-湿-机械失效的有限元分析

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564707

Biao Liu, Mingxiang Wang, T. Lam

{"title":"Finite element analysis of thermo-hygro-mechanical failure of a flip chip package","authors":"Biao Liu, Mingxiang Wang, T. Lam","doi":"10.1109/ICEPT.2005.1564707","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564707","url":null,"abstract":"Stacked chip scale packaging (SCSP) has been an increasingly important approach for realizing high density 3D packaging. During SCSP process, package will endure several thermal loadings, such as die attach (DA) cure, post-molding cure and reflow. Thermal stress may result in die crack or delamination before package is finished if thermal mismatch between internal packaging materials is too much. In this study, packaging process for a typical four-chip SCSP product, FTA073, is studied in detail. Finite element analysis (FEA) has been applied in three major process steps which experience temperature change for package failures in die crack or delamination, including the 1st DA cure (cure I), the 2nd/3rd/4th DA cure (cure II) and post-molding cure (cure III). Our process simulation demonstrates that cure II would be the most destructive by comparing the influence of these three curing processes on SCSP reliability. It is also found that, in cure I and cure II a certain distribution stress with typical characteristics is formed on package block which consists of 15 unit packages, however, no such characteristics was formed in step cure III. Our investigation would be beneficial to reducing package failures and increasing yields during packaging process","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125151578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Packaging technology of polymer/Si arrayed waveguide grating and their environmental stability 聚合物/硅阵列波导光栅封装技术及其环境稳定性

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564673

D. Zhang, Fei Wang, Yuguo Zhang, Xi-zhen Zhang, W. Deng, E. Shulin

引用次数: 0

Characterization of the bending creep behavior for electroplating nickel microbeam 电镀镍微梁弯曲蠕变行为的表征

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564667

C. Tsou, C. Hsu, W. Fang, T. Lai, H. Li

引用次数: 9

Development of fluxes for selected Sn-Cu based lead-free solders 锡铜基无铅焊料助焊剂的研制

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564733

Min Yang, Xiuzhong Liu, Chunqing Wang, Z. Zou, Da-wei Jiang

引用次数: 2

Fast thermal resistance measurement of high brightness LED 高亮度LED的快速热阻测量

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564685

Zhiling Ma, Xueren Zheng, Weijian Liu, Xiaowei Lin, W. Deng

引用次数: 20

Real time stress monitoring in reflow solder: Cu thin films in Si(111) 回流焊中的实时应力监测:Si(111)中的Cu薄膜

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564607

Li Song, An Bing, Zhang Tong-jun, Wu Yi-ping, Dai Wei

引用次数: 0

Analysis of Response of the Micro-Machined Poly-Silicon Cantilever Subjected to Vibration Environment 微加工多晶硅悬臂梁在振动环境下的响应分析

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564663

Xiaoling Xu, Jie-ying Tang

引用次数: 1